Updated 23 October 2000
The Institute for Electronic Materials Technology (ITME) in Warsaw, Poland is able to undertake the preparation of custom EPI layers (one or multi-layer structures) on any 3-5 materials and they activly seek such work. Please contact us for a quotation for a specific structure.
As an example of a routinely produced EPI wafer we quote:
Wafer 2"Ø with InGaAs
EPI on SI InP <100>, by MOCVD deposition
Substrate: Semi-Insulating InP (eg. InP:Fe),
Resistivity: > 1 x 10E7 Ohm cm, EDP < 1 x 10E4/cm2)
EPI: Lattice matched In/Ga alloy layer of n-type InGaAs
Nc > 2 x 10E18/cc (using Si as dopant)
Thickness: 0.5 um (+20%)
Price: $1,200.00 each (for 1 to 10 wafers),
Delivery: 5 weeks ARO
For more information contact EL-CAT Inc. at email@example.com.