Material   Type   Dopant   Orientation   Diameter   Thickness   Surface   Resistivity 
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Updated: Feb 6 2012
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3-5 Semiconductors

GaAs, GaP, GaSb, InAs, InP, InSb
GaAs - Gallium Arsenide
Note: Surface - P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that surface)
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Cart		 Item Qty in
Stock		 Price
$/unit		 Material Orient. Diam
(mm)		 Thck
(μm)		 Surf. Source Resistivity
Ωcm		 Nc
a/cm3		 Mobil
cm2/Vs		 EPD
/cm2		 Comment

B033 1 $290.00 undoped SI GaAs:- [100] 4" 1,000 P/P AXT n-type 4.2E7-4.8E7   6,450-6,680 <5,000 US Flats; Epi Ready

1916 3 $290.00 undoped SI GaAs:- [100] 4" 625 P/P AXT n-type 0.9E8-1.1E8   5,870-6,120 <5,000 US Flats; Epi Ready

C916 2 $290.00 undoped SI GaAs:- [100] 4" 625 P/P AXT n-type 0.7E8-1.0E8   6,290-6,420 <5,000 US Flats; Epi Ready

2023 4 $360.00 undoped SI GaAs:- [100] 3" 400 P/P ITME n-type 1E8 1.1E7 5,600 <1.2E5 US Flats; Epi Ready

1618 4 $1980.00 undoped SI GaAs:- [100] 2" 5,000 P/E ITME n-type       Epi Ready

9680 11 $170.00 undoped SI GaAs:- [100] 2" 380 P/E Girmet n-type (1.5-8.3)E7   5,000-7,130 <2,000 VGF; US Flats; Epi Ready

F680 7 $180.00 undoped SI GaAs:- [100] 2" 350 P/P Girmet n-type (1.5-8.3)E7   5,000-7,130 <2,000 VGF; US Flats; Epi Ready

I610 1 $180.00 undoped SI GaAs:- [100] 2" 380 P/P Comsec n-type 9.1E7 1.37E7 5,000 <5E4 US Flats; Epi Ready, TTV<10µm, Bow/Warp<20µm

E276 2 $180.00 undoped SI GaAs:- [100] 2" 400 P/P ITME n-type 6.48E7 1.7E7 5,670 <7.3E4 US Flats; Epi Ready

D149 17 $150.00 undoped SI GaAs:- [100] 2" 380 P/E Comsec n-type 6.7E7 1.9E7 4,920 <8,600 US Flats; Epi Ready

D061 3 $140.00 undoped SI GaAs:- [100] 2" 400 P/E ITME n-type 0.51 2.51E15 4,900 <6.8E4 US Flats; Epi Ready

G999 3 $225.00 undoped SI GaAs:- [100] 2" 600 P/P ITME n-type 0.5 6.2E15 2,000 <7E4 US Flats; Epi Ready

B543 20 $150.00 undoped SI GaAs:- [111B] ±0.5° 2" 400 P/P Comsec n-type 7.5E7 1.7E7 5,010 <8E4 EJ Flats; Epi Ready

1745 3 $460.00 undoped SI GaAs:- [411] ±1° 2" 400 P/E Comsec n-type 1.13E8 1.48E7 3,730 <7.5E4 Epi-Ready, SEMI Flats, Primary @ [110], Secondary @ [112]

a08b 1 $75.00 SI GaAs:x Poly. 10mm 2mm   Moscow #29 ~3E8       sample; 15g @ $5.00/g

D257 1 $140.00 n-type GaAs:Si [100] 2" 400 C/C Comsec 0.0062 3.3E17 3,060 <4.8E4 US Flats; Epi Ready

D026 21 $160.00 n-type GaAs:Si [100] ±0.1° 2" 450 ±15 P/E Girmet   (1.5-2.8)E18 2,100 <300 VGF; US Flats(2); Epi Ready

1690 1 $220.00 n-type GaAs:Si [110] 2" 350 P/E ITME 0.0022 1.57E18 1,790 <2E4 EJ Flats (Primary @110, Secondary @100); Epi Ready

9706 2 $150.00 n-type GaAs:Si [111] 2" 350 P/P ITME 0.02 9E16 3,440 <3.8E4 Epi Ready, SEMI Flats

F061 2 $140.00 n-type GaAs:Te [100-4° towards[111]] 2" 400 P/E ITME 4.1E-3 4.7E17 3,220 <5.6E4 US Flats; Epi Ready

B015 4 $200.00 p-type GaAs:Zn [100] 3" 475 P/P Comsec 0.013 4.7E18 100 <1E5 US Flats; Epi Ready

1557 1 $210.00 p-type GaAs:Zn [100] 2" 350 P/E ITME 1.8 2.6E16 129 <5E4 US Flats; Epi Ready

B557 1 $210.00 p-type GaAs:Zn [100] 2" 350 P/E ITME 1.3 3.45E16 143 <5.6E4 US Flats; Epi Ready

F127 2 $210.00 p-type GaAs:Zn [100] 2" 400 P/E ITME 0.48 (6.8-3.8)E16 180-230 <6E4 US Flats; Epi Ready

9693 2 $240.00 p-type GaAs:Zn [110] 3" 550 P/P ITME 0.105 2.7E17 217 <8E4 Epi Ready; Primary Flat @ [1,-1,0], S Flat @ [001]

C015 4 $180.00 p-type GaAs:Zn [110] 2" 400 P/E Comsec 0.19 1.35E17 235 <5E4 1 Flat @[1-10]; Epi Ready

B613 3 $200.00 p-type GaAs:Zn [111B] 2" 400 P/P ITME   4.7E16 163 <6.1E4 Epi Ready

1613 2 $160.00 p-type GaAs:Zn [111A] 2" 400 P/E ITME 0.8 5.2E16 163 <6.1E4 US Flats; Epi Ready

2333 6 $329.00 undoped SI GaAs:- [100] 3" 500 P/E ITME aro 3 wks n-type 1.8E8 6.3E6 5,380 <1.2E5 Epi Ready

2333A 2 $420.00 undoped SI GaAs:- [100] 3" 400 P/P ITME aro 3 wks n-type 1E8 1.1E7 5,600 <1.2E5 Epi Ready

2295A 2 $290.00 undoped SI GaAs:- [100] 51.3mm 380 P/E ITME aro 3 wks n-type 7.4E7 1.7E7 5,000 <8E4 US Flats; Epi Ready

2276 4 $130.00 undoped SI GaAs:- [100] 2" 400 P/E ITME aro 2 wks n-type 9.6E7 1.2E7 5,100 <6.6E4 US Flats; Epi Ready

2130 5 $210.00 undoped SI GaAs:- [100-1° towards[111A]] 2" 350 P/P ITME aro 2 wks n-type 8.7E7 1.3E7 5,380 <7.8E4 US Flats; Epi Ready

2130A 8 $210.00 undoped SI GaAs:- [100-1° towards[111A]] 2" 375 P/P ITME aro 2 wks n-type 8.7E7 1.3E7 5,380 <7.8E4 US Flats; Epi Ready

2272 1 $240.00 undoped SI GaAs:- [100] 2" 380 P/P ITME aro 2 wks n-type 9.1E7 1.37E7 5,000 <5E4 US Flats; Epi Ready

2328 3 $160.00 undoped SI GaAs:- [100] 2" 400 P/E ITME aro 3 wks n-type 6.9E7 1.7E7 5,250 <7.3E4 Epi Ready

2328A 5 $180.00 undoped SI GaAs:- [100] 2" 400 P/P ITME aro 3 wks n-type 6.48E7 1.7E7 5,670 <7.3E4 US Flats; Epi Ready

2328B 2 $180.00 undoped SI GaAs:- [100] 2" 400 P/P ITME aro 3 wks n-type 6.48E7 1.7E7 5,670 <7.3E4 a small nick on surface

2328C 1 $940.00 undoped SI GaAs:- [100] 2" 5,000 P/E ITME aro 3 wks n-type 4E7 2.7E7 5,700 <5.3E4 Epi Ready

2235 1 $170.00 undoped SI GaAs:- [100-6° towards[111A]] 2" 400 P/E ITME aro 2 wks n-type 2.5E7 4.8E7 5,000 <5E4 Epi Ready

2235B 3 $180.00 undoped SI GaAs:- [100-6° towards[111A]] 2" 400 P/E ITME aro 2 wks n-type 2.5E7 4.8E7 5,000 <5E4 one wafer has a small scratch, and has polishing fault on edge

1684 14 $140.00 undoped SI GaAs:- [100] 2" 400 P/E ITME aro 2 wks n-type 0.51 2.51E15 4,900 <6.8E4 US Flats; Epi Ready

2174 4 $140.00 undoped SI GaAs:- [100] 2" 380 P/E ITME aro 2 wks n-type 0.87 3.7E15 1,940 <5.8E4 US Flats; Epi Ready

2174A 1 $200.00 undoped SI GaAs:- [100] 2" 400 P/E ITME aro 2 wks n-type 0.64 4.9E15 2,300 <5.8E4 US Flats; Epi Ready

2174B 6 $250.00 undoped SI GaAs:- [100] 2" 600 P/P ITME aro 2 wks n-type 0.50 6.2E15 2,000 <7E4 US Flats; Epi Ready

2283 2 $160.00 undoped SI GaAs:- [111] 2" 400 P/E ITME aro 2 wks n-type 3.6E7 4E7 5,200 <6.5E4 US Flats; Epi Ready; microcrack in center (1.5cm)

P411 1 $460.00 undoped SI GaAs:- [411] 2" 400 P/E Comsec aro 2 wks n-type 1.13E8 1.48E7 3,730 <7.5E4 US Flats; Epi Ready

2157 1 $190.00 n-type GaAs:Si [100] 2" 400 P/E ITME aro 2 wks 0.0260 4.9E16 4,700 <4E4 Epi Ready

2218 1 $150.00 n-type GaAs:Si [100-1° towards[110]] 2" 450 P/E ITME aro 2 wks 7.0E-3 3.2E17 2,740 <4.6E4 US Flats, Epi Ready

2262 1 $220.00 n-type GaAs:Si [110] 2" 310 P/E ITME aro 2 wks 0.0022 1.57E18 1,790 <2E4 EJ Flats (Primary @110, Secondary @100); Epi Ready

2153A 3 $140.00 n-type GaAs:Te [100] 2" 400 P/E ITME aro 2 wks 4.86E-3 5.27E17 3,000 <4.6E4 US Flats; Epi Ready

1402 1 $140.00 n-type GaAs:Te [100] 2" 375 P/E ITME aro 2 wks 2.68E-3 8.9E17 2,553 <5E4 US Flats; Epi Ready

2054 1 $140.00 n-type GaAs:Te [100] 2" 375 P/E ITME aro 2 wks 2.40E-3 1.04E18 2,950 <1E5 US Flats; Epi Ready

1705 1 $170.00 n-type GaAs:Te [100] 2" 650 P/P ITME aro 2 wks 1.65E-3 1.6E18 2,375 <10,000 US Flats; Epi Ready

2145 3 $140.00 n-type GaAs:Te [100] 2" 400 P/E ITME aro 2 wks 1.74E-3 1.97E18 2,144 <1E5 US Flats; Epi Ready

2123 1 $180.00 n-type GaAs:Te [110] 2" 1,000 P/E ITME aro 2 wks 1.5E-3 1.6E18 2,450 <2.5E4 Epi Ready

2161B 1 $140.00 n-type GaAs:Te [111B] 2" 400 P/E ITME aro 2 wks 1.1E-3 2.58E18 2,430 <5E4 US Flats; Epi Ready

2161C 8 $150.00 n-type GaAs:Te [111B] 2" 385 P/P ITME aro 2 wks 9.3E-4 2.8E18 2,400 <5E4 Epi Ready

2315A 1 $220.00 p-type GaAs:Zn [100] 2" 400 ±15 P/E ITME aro 2 wks 1.3 3.45E16 143 <5.6E4 0.5mm nick on surface

2255 1 $300.00 p-type GaAs:Zn [100] 2" 400 P/E ITME aro 2 wks 0.5 6.5E16 192 <5E4 US Flats; Epi Ready

2255B 6 $220.00 p-type GaAs:Zn [100] 2" 400 P/E ITME aro 3 wks 0.48 6.8E16 190 <6E4 US Flats; Epi Ready

2170 6 $130.00 p-type GaAs:Zn [100] 1.22" 625 P/E ITME aro 2 wks 1.89E-2 2.75E18 120 <3.6E4 US Flats; Epi Ready

2331 3 $180.00 p-type GaAs:Zn [111A] 2" 400 P/E ITME aro 3 wks 0.8 6E16 163 <6.1E4 US Flats; Epi Ready

GaP - Gallium Phosphide
Note: Surface - P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that surface)
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Stock		 Price
$/unit		 Material Orient. Diam
(mm)		 Thck
(μm)		 Surf. Source Resistivity
Ωcm		 Nc
a/cm3		 Mobil
cm2/Vs		 EPD
/cm2		 Comment

2261 3 $330.00 SI GaP:Cr [100] 2" 400 P/P ITME 2.4E13 5.6E3 40 <5E4 US Flats; Epi Ready

9431 1 $6580.00 undoped GaP:- ingot [100] 3" 25,700   Girmet n-type <1E16 {<1E15}   <1E5 US Flats; 0.482kg

D451 1 $250.00 undoped GaP:- [110] ±0.5° 2" 300 P/P Comsec n-type >0.4 <1E17 <140 <4.7E4 US Flats; SEMI Flats (primary @ [111], second @ [112]) Wafer unsealed and diced into 0.5 inch squares

1933 1 $370.00 undoped GaP:- [110] 2" 400 P/P ITME n-type 0.12 3.4E15 150 <5E4 Epi Ready; Primary Flat @ (110), SF @ (100)

H921 3 $360.00 undoped GaP:- [111A] ±0.5° 3" 550 P/E Comsec n-type 5.3 8.1E15 145 <6E4 US Flats; Epi Ready

F921 3 $340.00 undoped GaP:- [111A] ±0.5° 3" 550 P/E Comsec n-type 5.3 8.1E15 145 <6E4 US Flats; Epi Ready

J921 3 $360.00 undoped GaP:- [111A] ±0.5° 3" 550 P/E Comsec n-type 0.48 1E17 129 <5.5E4 US Flats; Epi Ready

9222 6 $360.00 undoped GaP:- [111] ±0.5° 2" 400 P/P Comsec n-type 6.5 6.9E15 140 <3.4E4 US Flats; Epi Ready

B926 1 $380.00 undoped GaP:- [111] 2" 400 P/P ITME n-type 1.53 2.7E16 150 <3.4E4 EJ Flats; Epi Ready

9775 1 $410.00 n-type GaP:S [100-6° towards[[111]A]] 2" 400 P/E Comsec 0.058 9.9E17 107 <5.3E4 US Flats; Epi Ready

1640 4 $280.00 p-type GaP:Zn [100] 2" 400 P/E ITME 0.31 2.5E17 78 <4.5E4 EJ Flats; Epi Ready

1224 1 $330.00 p-type GaP:Zn [100-2° towards[111A]] ±0.5° 2" 400 P/E ITME 0.2 4E17 80 <9.2E4 US Flats; Epi Ready

C145 2 $350.00 p-type GaP:Zn [100] 2" 400 P/E ITME 0.164 5.5E17 69 <5.3E4 US Flats; Epi Ready

1631 1 $270.00 p-type GaP:Zn [100] 2" 400 P/E ITME 0.164 5.5E17 69 <5.3E4 US Flats; Epi Ready

E098 2 $340.00 p-type GaP:Zn [100] 2" 350 P/E ITME 0.0776 1.39E18 57 <5E4 EJ Flats; Epi Ready

2113 2 $510.00 p-type GaP:Zn [111] 2" 400 P/E ITME 0.11 8.8E17 65 <8E4 SEMI; Epi Ready; PF(110), SF(112)

178 5 $330.00 SI GaP:Cr [100] 2" 400 P/P ITME aro 2 wks 2.4E13 5.6E3 40 <5E4 Epi Ready

224 2 $320.00 undoped GaP:- [100] 2" 450 P/E ITME aro 3 wks n-type 3.5E8 1.2E8 145 <4.7E4 Epi Ready

117A 4 $320.00 undoped GaP:- [100-2° towards[110]] 2" 500 P/E ITME aro 2 wks n-type 1.04 3.9E16 168 <5E4 (100) ->2°-><110> EJ

M087B 3 $310.00 undoped GaP:- [100-10° towards[110]] 2" 400 P/E ITME aro 2 wks n-type 1.3 4E16 120 <2E4 Epi Ready

M087A 2 $290.00 undoped GaP:- [100-5° towards[110]] 2" 400 P/E ITME aro 2 wks n-type 1.3 4E16 120 <2E4 Epi Ready

M-087A 2 $340.00 undoped GaP:- [100-10° towards[110]] 2" 400 P/E ITME aro 2 wks n-type 1.3 4E16 120 <2E4 Epi Ready

151 2 $490.00 undoped GaP:- [110] 2" 300 P/P ITME aro 2 wks n-type 15 3.1E15 136 <5E4 US Flats; Epi Ready

151C 3 $160.00 undoped GaP:- [110] 10x10mm 400 P/P ITME aro 2 wks n-type 12 3.4E15 150 <5E4 Epi Ready

151B 3 $460.00 undoped GaP:- [110] 5x6mm 400 P/P ITME aro 2 wks n-type >0.9 5E15 140 <4.7E4 contacts on the edge of 0.4x5mm

151A 4 $450.00 undoped GaP:- [110] 5x6mm 400 P/P ITME aro 2 wks n-type >0.9 5E15 140 <4.7E4 contacts on the edge of 0.4x6mm

114 1 $540.00 undoped GaP:- [110] 2" 400 P/P ITME aro 3 wks n-type 2.15 2.7E16 110 <5E4 Epi Ready; Primary Flat @ (111), Secondary @ (112)

144 1 $380.00 undoped GaP:- [111B] 2" 400 P/E ITME aro 2 wks n-type 4.6 1E16 135 <8.8E4 Epi Ready; PF@(110), SF@(112)

149 1 $380.00 undoped GaP:- [111B] 2" 400 P/E ITME aro 2 wks n-type 3.2 2E16 170 <5E4 EJ Flats; Epi Ready

88 1 $480.00 n-type GaP:S [100] 2" 400 P/E ITME aro 2 wks 0.24 2.3E17 110 <7.1E4 EJ

78 1 $550.00 n-type GaP:S [100-6° towards[111]] 2" 400 P/E ITME aro 2 wks 5.8E-2 9.9E17 107 <5.3E4 EJ Flats; Epi Ready

100 4 $450.00 n-type GaP:S [100] 2" 350 ±10 P/E ITME aro 3 wks 0.045 1.7E18 80 <1E5 pow.b.dobra podtrawienie na beck

M-008 1 $400.00 n-type GaP:S [111] 2" 1,000 P/P ITME aro 3 wks 0.209 2.21E17 135 <5E4 Epi Ready

M008A 1 $350.00 n-type GaP:S [111] 2" 1,000 P/P ITME aro 2 wks 0.209 2.21E17 135 <5E4 Epi Ready

M-009 7 $270.00 n-type GaP:S [111] 2" 275 P/E ITME aro 2 wks 0.136 4.37E17 105 <5E4 1 wafer has small loss on edge

148A 10 $290.00 n-type GaP:S [111A] 2" 315 P/E ITME aro 2 wks 4.3E-2 1.6E18 90 <1.3E5 US Flats; Epi Ready

148 1 $340.00 n-type GaP:S [111A] 2" 315 P/E ITME aro 2 wks 4.3E-2 1.6E18 90 <1.3E5 some visible white spots, SEMI

148C 8 $320.00 n-type GaP:S [111A] 2" 350 P/E ITME aro 3 wks 4.3E-2 1.6E18 90 <1.3E5 Epi Ready

187C 30 $340.00 p-type GaP:Zn [100] 2" 400 P/E ITME aro 2 wks 0.310 2.5E17 78 <4.5E4 EJ Flats; Epi Ready

183 3 $350.00 p-type GaP:Zn [100] 2" 400 P/E ITME aro 2 wks 0.164 5.5E17 69 <5.3E4 US Flats; Epi Ready

187D 1 $470.00 p-type GaP:Zn [100] 2" 400 P/E ITME aro 2 wks 0.117 6.95E17 77 <4.5E4 US Flats; Epi Ready

90 2 $420.00 p-type GaP:Zn [100] 2" 400 P/E ITME aro 2 wks 0.081 1.1E18 70 <2E5 EJ Flats; Epi Ready

177 5 $390.00 p-type GaP:Zn [100] 2" 350 P/E ITME aro 2 wks 0.0776 1.39E18 57 <5E4 EJ Flats; Epi Ready

227 2 $460.00 p-type GaP:Zn [100-2° towards[110]] 2" 400 P/E ITME aro 2 wks 4.4E-2 3.1E18 50 <2.5E4 Epi Ready

226 1 $520.00 p-type GaP:Zn [111A] 2" 350 P/E ITME aro 2 wks 4.6E-2 2.7E18 50 <9.5E4 US Flats; Epi Ready; edge crack

GaSb - Gallium Antimonide
Note: Surface - P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that surface)
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$/unit		 Material Orient. Diam
(mm)		 Thck
(μm)		 Surf. Source Resistivity
Ωcm		 Nc
a/cm3		 Mobil
cm2/Vs		 EPD
/cm2		 Comment

C123 1 $390.00 n-type GaSb:Te [100] 2" 450 P/E ITME 0.02 1.2E17 2,550 <1,000 US Flats; Epi Ready

J761 1 $100.00 n-type GaSb:Te [100-6° towards[111]] ±0.5° 2" 400 BROKEN   0.0019-0.0048 (4.4-13)E17 2,540-2,950 <10,000 US Flats

9761 1 $320.00 n-type GaSb:Te [100-6° towards[111]] ±0.5° 2" 400 P/E ITME 0.0019-0.0048 @ 77°K (4.4-13)E17 @ 77°K 2,540-2,950 @ 77°K <10,000 US Flats; Epi Ready

F718 2 $370.00 n-type GaSb:Te [100] 2" 500 P/E ITME 0.0023 6.8E17 4,000 <3,000 US Flats; Epi Ready

K267 5 $380.00 undoped GaSb:- [100] 2" 450 P/P ITME due 2/15 p-type 0.123 1.83E16 @ 77ºK 2,770 @ 77ºK <4E4 US Flats(2); Epi Ready

D509 1 $70.00 undoped GaSb:- [100] 2" 500 BROKEN ITME p-type 1.55E17 638 <2,800 Shattered into many pieces

2192 3 $390.00 p-type GaSb:Si [100] 2" 450 P/E ITME 0.03 2.6E17 780 <3,000 US Flats; Epi Ready

E192 3 $390.00 p-type GaSb:Si [100] 2" 450 P/E ITME 7.2E-3 1.6E18 536 <2,000 US Flats; Epi Ready

D192 3 $390.00 p-type GaSb:Si [100] 2" 450 P/E ITME 8.2E-4 1.6E19 470 <3,000 US Flats; Epi Ready

GaSb30 85 $390.00 n-type GaSb:Te [100] 2" 450 P/E ITME aro 5 wks <1.5E-2 @ 77K (0.11-1.28)E18 @ 77K 3800-5900 @ 77K <5.5E3 US Flats; Epi Ready

GaSb29 135 $390.00 n-type GaSb:Te [100] 2" 450 P/E ITME aro 5 wks (4.3-5.5)E-3 @ 77K (0.4-1.9)E18 @ 77K 3942-5872 @ 77K <1.1E4 US Flats; Epi Ready

18 2 $340.00 n-type GaSb:Te [100-6° towards[111]] 2" 400 P/E ITME aro 2 wks 1.9E-3-4.8E-3 (4.4-13)E17 2,540-2,950 <10,000 US Flats; Epi Ready

GaSb28 107 $390.00 p-type GaSb:- [100] 2" 450 P/E ITME aro 5 wks 0.122-0.130 @ 77K (1.7-1.9)E16 @ 77K 2724-2836 @ 77K <1.1E5 US Flats; Epi Ready

GaSb27 94 $390.00 p-type GaSb:- [100] 2" 450 P/E ITME aro 5 wks 0.120-0.125 @ 77K (1.7-1.9)E16 @ 77K 2650-2908 @ 77K <8.1E4 US Flats; Epi Ready

27 2 $460.00 undoped GaSb:- [100] 2" 500 P/E ITME aro 3 wks p-type 0.12 1.85E16 2,700 <3.2E4 US Flats; Epi Ready

CZ-28 1 $510.00 undoped GaSb:- [100] 2" 450 P/E ITME aro 3 wks p-type 0.069 1.3E17 695 <7.5E4 Epi Ready

GaSb19 75 $390.00 p-type GaSb:Si [100] 2" 450 P/E ITME aro 5 wks 0.025-0.030 @ 77K (2.67-3.61)E17 @ 77K 705-763 @ 77K   US Flats; Epi Ready

GaSb22 84 $390.00 p-type GaSb:Si [100] 2" 450 P/E ITME aro 5 wks (7.1-7.3)E-3 @ 77K (1.9-3.6)E18 @ 77K 267-451 @ 77K <1.0E4 US Flats; Epi Ready

GaSb20 83 $390.00 p-type GaSb:Si [100] 2" 450 P/E ITME aro 5 wks ~8.44E-4 @ 77K ~2.11E19 @ 77K ~350 @ 77K <2.0E3 US Flats; Epi Ready

GaSb24 114 $390.00 p-type GaSb:Zn [100] 2" 450 P/E ITME aro 5 wks (6.3-7.6)E-3 @ 77K (5.1-5.2)E18 @ 77K 340-373 @ 77K <2.6E4 US Flats; Epi Ready

GaSb23 107 $390.00 p-type GaSb:Zn [100] 2" 450 P/E ITME aro 5 wks (3.3-3.7)E-3 @ 77K (5.1-5.2)E18 @ 77K 330-353 @ 77K <9.2E4 US Flats; Epi Ready

CZ-23 9 $340.00 p-type GaSb:Zn [100-6° towards[111]] 2" 380 P/E ITME aro 2 wks 0.00415 5.43E18 275 <3,000 US Flats; Epi Ready; (@300K)

CZ-26 1 $510.00 p-type GaSb:Zn [111] 2" 450 P/E ITME aro 3 wks 0.0026 8.1E17 1,293 <1,700 Epi Ready

GaSb26 94 $390.00 p-type GaSb:Zn [111] 2" 450 P/E ITME aro 5 wks (2.3-2.5)E-3 (7.7-7.9)E18 @ 77K 310-360 @ 77K <1.7E3 US Flats; Epi Ready

InAs - Indium Arsenide
Note: Surface - P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that surface)
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$/unit		 Material Orient. Diam
(mm)		 Thck
(μm)		 Surf. Source Resistivity
Ωcm		 Nc
a/cm3		 Mobil
cm2/Vs		 EPD
/cm2		 Comment

1687 1 $590.00 undoped InAs:- [100] 1" 3,000 P/E ITME n-type 0.0085 3.3E16 21,750 <100 NO Flats; Epi Ready

B796 2 $320.00 undoped InAs:- [100] 2" 500 P/E ITME n-type (2-3)E16   <5,000 US Flats; Epi Ready

1627 4 $350.00 undoped InAs:- [100] 2" 350 P/E ITME n-type 0.0011 2.5E16 21,400 <5,000 US Flats; Epi Ready

2034 5 $380.00 n-type InAs:S [100] 2" 500 P/P ITME 6.3E-4 8E17 12,600 <5,000 US Flats; Epi Ready

2028 5 $330.00 n-type InAs:Sb [111B] ±0.5° 2" 500 P/E Xiamen   (5-20)E18 >6,000 <10,000 US Flats; Epi Ready

InAs98 50 $290.00 undoped InAs:- [100] 2" 400 P/E ITME aro 5 wks n-type (2-3)E16 20,500-22,000 <5,000 Epi Ready, US Flats

InAs88 20 $340.00 undoped InAs:- [100] 2" 400 P/E ITME aro 5 wks n-type (2-3)E16 21,000-23,000 <100 Epi Ready, US Flats

130 3 $440.00 undoped InAs:- [100] 2" 400 P/P ITME aro 3 wks n-type 0.0125 2.1E16 240 <3,500 Epi Ready

99 2 $400.00 undoped InAs:- [100] 2" 500 P/E ITME aro 3 wks n-type 1.1E-3 2.5E16 21,400 <5,000 US Flats; Epi Ready

82 4 $230.00 undoped InAs:- [100] 40mm 1,000 P/P ITME aro 2 wks n-type 0.0085 2.5E16 22,000 <100 lamella with length 7 mm

InAs96 55 $300.00 n-type InAs:S [100] 2" 400 P/E ITME aro 5 wks   (6-9)E17 12,500-14,000   Epi Ready, US Flats

96 3 $430.00 n-type InAs:S [100] 2" 400 P/E ITME aro 3 wks 6.4E-4 6.7E17 14,400 <1,500 US Flats; Epi Ready

96A 3 $430.00 n-type InAs:S [100] 2" 500 P/E ITME aro 3 wks 6.3E-4 8E17 12,600 <5,000 US Flats; Epi Ready

InP - Indium Phosphide
Note: Surface - P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that surface)
Add to
Cart		 Item Qty in
Stock		 Price
$/unit		 Material Orient. Diam
(mm)		 Thck
(μm)		 Surf. Source Resistivity
Ωcm		 Nc
a/cm3		 Mobil
cm2/Vs		 EPD
/cm2		 Comment

C674 1 $520.00 SI InP:Fe [100] 3" 600 P/E ITME 2.2E7 1.38E8 2,050 <7.3E4 US Flats; Epi Ready

8585 1 $330.00 SI InP:Fe [100] 2" 350 P/E Comsec (1.85-8.85)E7 (3.6-17)E7 1,970-1,980 <5E4 (4.1-4.7)E4 US Flats; Epi Ready

2052 1 $350.00 SI InP:Fe [100] 2" 450 P/E ITME 3.5E7 8.3E7 2,110 <5E4 US Flats; Epi Ready

B352 2 $330.00 SI InP:Fe [100] 2" 350 P/E ITME 2.9E7 1.1E8 2,000 <2.3E4 EJ Flats; Epi Ready

C745 3 $495.00 SI InP:Fe cube [100] 8x4 3,500 P/P Comsec 8.1E7 3.1E7 2,460 <6.8E4 All sides polished, 8×4mm is (001), 4×3.5mm is (110), 8×3.5mm is (1,-1,0)

D745 21 $400.00 SI InP:Fe cube [100] 8×4 3,500 P/P Comsec 2.5E7 1.3E8 2,330 6.8E4 All sides polished, 8.0×4.0mm is (001), 4.0×3.5mm is (110), 8.0×3.5mm is (1,-1,0)

1844 5 $330.00 undoped InP:- [100] 2" 400 P/E Comsec n-type 0.050 3.4E16 3,590 <9.2E4 US Flats; Epi Ready

F745 3 $1920.00 undoped InP:- Seed crystal [100] 16x16 75,000   Comsec n-type       Seed crystal sides are [011] & {01-1]; 92g

G745 10 $480.00 undoped InP:-Seed crystal [100] 8x8 75,000   Comsec n-type       Seed crystal sides are [011] & {01-1]; 23g

B745 7 $320.00 n-type InP:S [100] 2" 2,000 P/E Comsec 0.0011 3.6E18 1,530 <1.1E4 US Flats (two); Epi Ready

F844 26 $220.00 n-type InP:S [100] 2" 380 P/E Comsec 0.0011 4E18 1,360 <1.5E4 US Flats; Epi Ready

E844 12 $220.00 n-type InP:S [100] 2" 400 P/E Comsec 0.0011 4E18 1,360 <1.5E4 US Flats; Epi Ready

D844 10 $220.00 n-type InP:S [100] 2" 400 P/E Comsec 0.00097 4.97E18 1,300 <1.5E4 US Flats; Epi Ready

9198 4 $240.00 n-type InP:S [100] 2" 400 P/P Comsec (0.00060-0.00094) (5.1-8.5)E18 1,250-1,500 <6,200 US Flats; Epi Ready

C844 2 $220.00 n-type InP:S [100] 2" 400 P/E Comsec 0.00076 6.6E18 1,200 <6,500 US Flats; Epi Ready

D086 4 $240.00 n-type InP:S [100] 2" 400 P/P Comsec 6.5E-4 8.3E18 1,160 <1.1E4 US Flats; Epi Ready

E254 1 $260.00 n-type InP:S [100] 2" 400 P/E ITME 0.000708 9.3E18 950 <1,000 EJ Flats; Epi Ready

1843 5 $220.00 n-type InP:S+Zn [100] 50mm 400 P/E Comsec 0.028-0.072 (4.4-4.9)E18 46 <300 2 Flats

2077 1 $430.00 p-type InP:Zn [100] 2" 425 P/E ITME 2.65E-2 4.5E18 53 <1,000 US Flats; Epi Ready

P050 10 $250.00 InP:S+Zn [100] 2" 400 P/E ITME aro 2 wks 2.03E-2 3.8E17 810 <4.2E4 US Flats; Epi Ready

P047 3 $420.00 InP:S+Zn [100] 2" 400 P/E ITME aro 4 wks 0.026 5.3E18 45 <1,000 2 Flats

P098 1 $270.00 SI InP:Fe [100] 2" 350 P/E ITME aro 2 wks (3.6-17.0)E7 (1.85-8.85)E7 1,970-1,980 <4.7E4 US Flats; Epi Ready

700B 4 $410.00 SI InP:Fe [100] 2" 450 P/E Comsec aro 2 wks 3.5E7 8.3E7 2,110 <5E4 US Flats; Epi Ready

491 1 $270.00 SI InP:Fe [100] 2" 300 P/E ITME aro 2 wks 1.35E7 3.03E8 1,669 <5.4E4 US Flats; Epi Ready

700 5 $390.00 SI InP:Fe [100] 50.7 350 P/E ITME aro 2 wks 2.9E7 1.1E8 2,000 <2.3E4 Epi Ready

700A 3 $420.00 SI InP:Fe [100] 50.5 350 P/E ITME aro 2 wks 4.5E7 6.9E7 2,020 <5E4 EJ Flats; Epi Ready

P068 2 $490.00 n-type InP:S [100] 3" 600 P/E ITME aro 2 wks 4.35E-4 1.48E19 985 <2,000 EJ Flats; Epi Ready

IP_1 18 $180.00 n-type InP:S [100] 50 450* C/C* Comsec aro 2 wks US Flts (3.2-4.2)E18   <4E4  

543A 2 $290.00 n-type InP:S [100] 2" 350 P/E ITME aro 3 wks 1.15E-3 3.3E18 1,620 <2E4 Epi Ready

543 2 $370.00 n-type InP:S [100] 2" 350 P/E ITME aro 3 wks 1.15E-3 3.3E18 1,620 <2E4 Epi Ready

511 1 $270.00 n-type InP:S [100] 2" 500 P/E ITME aro 2 wks 1.2E-3 3.9E18 1,280 <2.1E4 Epi Ready

IP_2 24 $180.00 n-type InP:S [100] 50 450* C/C* Comsec aro 2 wks US Flts (4.2-5.2)E18   <4E4  

P025 37 $220.00 n-type InP:S [100] 2" 400* P/E* Comsec aro 4 wks 0.00094-0.00054 (4.3-9.5)E18   6,000 2Flts

P040 2 $320.00 n-type InP:S [100] 2" 350 P/E ITME aro 2 wks 8.89E-4 4.96E18 1,418 <2.9E4 EJ Flats; Epi Ready

IP_3 24 $180.00 n-type InP:S [100] 50 450* C/C* Comsec aro 2 wks US Flts (5.2-8.1)E18   <3E4  

P037 5 $250.00 n-type InP:S [100] 2" 400 P/E ITME aro 2 wks 7.72E-4 5.77E18 1,408 <10,000 US Flats; Epi Ready

P054B 2 $260.00 n-type InP:S [100] 2" 350 P/E ITME aro 2 wks 8.4E-4 6.12E18 1,410 <5,000 US Flats; Epi Ready

P041 2 $250.00 n-type InP:S [100] 2" 400 P/E ITME aro 2 wks 7.23E-4 6.8E18 1,330 <4,500 Epi Ready

P029 6 $250.00 n-type InP:S [100] 2" 400 P/E ITME aro 2 wks 5.7E-4 8.24E18 1,330 <10,000 US Flats; Epi Ready

IP_4 4 $180.00 n-type InP:S [100] 50 450* C/C* Comsec aro 2 wks US Flts 8.5E18   <1E4  

474A 3 $260.00 n-type InP:S [100] 2" 400 P/E ITME aro 2 wks 8.08E-4 9.18E18 1,110 <5E4 US Flats; Epi Ready

474 4 $260.00 n-type InP:S [100] 2" 400 P/E ITME aro 3 wks 7.08E-4 9.3E18 950 <1,000 EJ Flats; Epi Ready

636 4 $300.00 n-type InP:S [115] 2" 400 P/E ITME aro 2 wks 1.08E-3 4.07E18 1,416 <3.7E4 Epi Ready

InSb - Indium Antimonide
Note: Surface - P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that surface)
Add to
Cart		 Item Qty in
Stock		 Price
$/unit		 Material Orient. Diam
(mm)		 Thck
(μm)		 Surf. Source Resistivity
Ωcm		 Nc
a/cm3		 Mobil
cm2/Vs		 EPD
/cm2		 Comment

B721 7 $320.00 undoped InSb:- [100] 2" 500 P/E Xiamen n-type <2E14     US Flats; Epi Ready

1544 3 $320.00 undoped InSb:- [111] ±0.5° 2" 500 P/E Xiamen n-type   >50,000 <200 US Flats; Epi Ready

1861 3 $460.00 undoped InSb:- [111A] ±0.5° 2" 450 P/P Xiamen n-type (4-7)E14   <200 Epi Ready

C035 2 $666.00 n-type InSb:Te [100] 2" 450 P/P Xiamen   (2-3)E17   <1,500 US Flats; Epi Ready

G860 2 $320.00 n-type InSb:Te [111B] ±0.5° 2" 450 P/E Comsec 0.00011-0.00033 (5.7-20)E17 24,000-34,000 <1,300 EJ Flats; Epi Ready

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