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Updated: Jul 7 2025
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Compound Semiconductors

GaN - Gallium Nitride, GaAs - Gallium Arsenide, GaP - Gallium Phosphide, GaSb - Gallium Antimonide, InAs - Indium Arsenide, InP - Indium Phosphide
GaN - Gallium Nitride
Note: Surface - P = Polished, E = Etched, C = AsCut, G = Ground, Ox = Oxide (on that surface)
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Stock		 Price
$/wafer		 Material Orient. Diam. Thck
(μm)		 Surf. Source Resistivity
Ωcm		 Nc
a/cm3		 Mobil
cm2/Vs		 EPD
/cm2		 Comment
Q1704 1 $3,500.00 undoped GaN:- [0001] ±1° 4" 480 ±50 P/E NCIT aro 4 wks n-type <0.5     <5E6 Epi Ready

GaAs - Gallium Arsenide
Note: Surface - P = Polished, E = Etched, C = AsCut, G = Ground, Ox = Oxide (on that surface)
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Stock		 Price
$/wafer		 Material Orient. Diam. Thck
(μm)		 Surf. Source Resistivity
Ωcm		 Nc
a/cm3		 Mobil
cm2/Vs		 EPD
/cm2		 Comment
12341 25 $366.00 undoped SI GaAs:- [100] 6" 625 P/P Reclam n-type       SEMI Notch; Epi Ready, Sold in Individual wafer cassettes
11654 7 $366.00 undoped SI GaAs:- [100] 6" 625 P/P Reclam n-type       SEMI Notch; Epi Ready, Sold in individual wafer cassettes
11866 30 $570.00 undoped SI GaAs:- [100] 4" 625 P/E NCIT n-type >1E7     <10,000 US Flats; Epi Ready
11734 20 $546.00 undoped SI GaAs:- [100] 3" 550 ±50 P/P NCIT n-type >1E7   >5,000 <10,000 US Flats; Epi Ready
11730 5 $862.80 undoped SI GaAs:- [100] 3" 625 P/P ITME n-type 2.5E7-1.7E8 (7-50)E6 5,000-5,200 <1.5E5 EJ Flats; Epi Ready
A1730 2 $720.00 undoped SI GaAs:- [100] 3" 625 P/P ITME n-type (1.1-0.7)E8 (1.0-1.8)E7 5,300-5,700 <1.5E5 EJ Flats; Epi Ready
12534 5 $255.00 undoped SI GaAs:- [100] 2" 480 P/E CMK n-type 8.58E7-1.43E8   6,415-6,940 <8.2E4 EJ Flats; Epi Ready
12628 2 $240.00 undoped SI GaAs:- [100-2° towards[110]] 2" 440 P/E CMK n-type 4.38E8   5,398 <67,000 PF @ <0-1-1>, SF @ <0-1+1>, Epi Ready; 76 more wafers available
12005 1 $170.00 undoped SI GaAs:- [100] 2" 350 P/E CMK n-type 3.45E8-7.01E8   4,151-6,318   1 Flat; Epi Ready, In single wafer cassettes
12085 10 $180.00 undoped SI GaAs:- [100-2.5° towards[110]] ±0.5° 2" 500 P/E CMK n-type 2.3E8-4.1E8   1,600-6,500 <8.2E4 US Flats; Epi Ready
10161 1 $1,180.00 undoped SI GaAs:- [100] 2" 6,700 ±50 P/P ITME n-type 1.1E8 1.1E7 5,000 <1E5 NO Flats; Epi Ready
S761 8 $270.00 undoped SI GaAs:- [100] 1" 350 P/P CMK n-type >1E7     <8,000 VGF; NO Flats; Epi Ready
12230 2 $680.00 undoped SI GaAs:- [111A] ±0.5° 2" 450 P/E CMK n-type 1.22E9   2,154 <65,000 2Flats, PF @ <11-2>; SF 45° CW from PF, Non-Epi-Ready Surface
12652 4 $392.00 undoped SI GaAs:- [111A] 2" 450 ±25 P/E CMK due 7/20 n-type 1.22E9   2,154 <65,000 2 Flats; Epi Ready
11452 4 $345.00 SI GaAs:Cr [100] 4" 625 P/E CMK 1.58E8-1.93E8   6,081-6,130 <8.04E4 EJ Flats; Epi Ready
11863 10 $480.00 n-type GaAs:Si [100] 4" 625 P/E NCIT <0.005 (1-10)E17 >1,000 <8,000 US Flats; Epi Ready
10089 1 $150.00 n-type GaAs:Si [100-0.8° towards[110]] ±0.1° 2" 470 P/E CMK 0.00115-0.00651 (1.45-4.86)E17 >1,000 <8,000 VGF; EJ Flats; Epi Ready
12343 49 $140.00 n-type GaAs:Si [100] 2" 450 P/E CMK 0.00245-0.00808 (2.4-11.8)E17 >1,441 <11,935 VGF; EJ Flats; Epi Ready
A1706 10 $240.00 n-type GaAs:Si [100] 2" 350 P/P CMK 0.00384-0.00500 (4.76-8.24)E17 1,974-2,654 <8,500 VGF; 2 Flats; Epi Ready
12405 6 $420.00 n-type GaAs:Si [100-2° towards[011]] ±0.5° 2" 350 P/E CMK 0.00221-0.00282 (9.1-13.6)E17 2,074-2,438   P Flat @<0-1-1>, SF @ <0-11>; Epi Ready
11706 9 $240.00 n-type GaAs:Si [100] 50±0.3mm 300 P/P CMK   (2.24-6.48)E17   <9,000 VGF; 2 Flats; Epi Ready
A302 37 $163.50 p-type GaAs:Zn [100] ±0.25° 2" 450 ±10 P/E CMK   (8-30)E18   <8,000 VGF; EJ Flats; Epi Ready
B0538 12 $210.00 p-type GaAs:Zn [100] 2" 300 P/E CMK 0.00413-0.01010 (8.48-55.5)E18 37-73 <21,850 1 Flat; Epi Ready
11384 7 $240.00 p-type GaAs:Zn [110] ±0.5° 2" 500 P/E CMK 0.0111-0.0130 (2.97-5.43)E18 103-161 <4.84E4 P Flat @ <011>; S Flat @ <100>, Epi Ready
O1083 5 $138.40 undoped SI GaAs:- [100] 2" 350 P/E CMK aro 2-3 wks n-type 2.19E8   6,375 <84,000 50.8mmØ, EJ Flats; Epi Ready; 13 more wafers available
O1375 25 $680.00 undoped SI GaAs:- [111A] 2" 450 P/E CMK Aro 7-9 wks n-type 1.22E9   2,154 <65,000 P Flat @ <11-2>; S Flat 45° CCW from PF, Epi Ready; 34 more wafers available
A819 2 $165.00 n-type GaAs:Si [100] 3" 370 P/E CMK Aro 7-9 wks 0.00406 (3.84-5.1)E17 3,011-3,368 <94,000 EJ Flats; Epi Ready
A819B 1 $166.00 n-type GaAs:Si [100] 3" 400 P/P CMK Aro 7-9 wks 0.00406 (3.84-5.1)E17 3,011-3,368 <94,000 EJ Flats; Epi Ready
HN17 5 $120.00 n-type GaAs:Si [100-0.8° towards[110]] ±0.5° 2" 470 P/E aro 2-3 wks <1 (0.05-1)E18     VGF; EJ Flats; Epi Ready
1F055 16 $138.00 n-type GaAs:Si [100] 2" 620 E/E CMK Aro 7-9 wks 0.00349-0.00851 (2.32-8.18)E17 2,189-3,131 <25,000 US Flats, Can be polished
T3686 6 $194.00 n-type GaAs:Te [100] 4" 750 P/P CMK Aro 7-9 wks 8.09E3 (3.6-18.3)E16 4,218   EJ Flats; Epi Ready; 1 more wafer available

GaP - Gallium Phosphide
Note: Surface - P = Polished, E = Etched, C = AsCut, G = Ground, Ox = Oxide (on that surface)
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$/wafer		 Material Orient. Diam. Thck
(μm)		 Surf. Source Resistivity
Ωcm		 Nc
a/cm3		 Mobil
cm2/Vs		 EPD
/cm2		 Comment
12217 6 $1,360.00 undoped GaP:- [110] ±0.5° 10x10 450 P/P ITME n-type 3.6E8-2.1E14 <6.3E7 <274 <4E4 NO Flats; Epi Ready, Group of 6 sqaures diced from one wafer
A2023 1 $1,500.00 undoped GaP:- [110] ±0.5° 5x5 450 P/P ITME n-type 3.6E8-2.1E14 <6.3E7 >275 <4E4 Epi Ready, Set of assorted chipped pieces , 2 squares and two half triangles
12023 2 $1,050.00 undoped GaP:- [110] ±0.5° 5mmx5mm 450 P/P ITME n-type 3.6E8-2.1E14 <6.3E7 >275 <4E4 Epi Ready
10778 1 $680.00 undoped GaP:- [111B] ±0.5° 2" 400 P/E ITME n-type 0.09-0.22 (2-4.6)E16 145-155 <8E4 EJ Flats; Epi Ready
10673 3 $600.00 n-type GaP:S [100-10° towards[110]] ±1° 2" 302 P/E ITME 0.11-0.15 (4.75-5.35)E17 105-115 <5E4 EJ Flats; Epi Ready
8152 1 $460.00 n-type GaP:S [100-10° towards[110]] ±1° 2" 302 P/E ITME 0.16 4.79E17 112 <5E4 EJ Flats; Epi Ready
A2546 2 $660.00 n-type GaP:S [100] 2" 400 P/E ITME   (1.8-3)E18     US Flats; Epi Ready, Chipped Edges
12567 4 $540.00 n-type GaP:S [100] 2" 400 P/E ITME 0.030-0.033 (2.2-2.6)E18 80-86 <6E4 SEMI US Flats; Epi Ready
6940 538 $40.00 n-type GaP:S [100-2.0° towards[101]] ±1.0° 48.25mm 280 ±15 P/E ELMA 0.050-0.125 (4-14)E17 70-130   2 Flats, PF @ <0,1,-1>±1°, SF 135° CW from PF; Sold in sealed cassettes of 25 wafers<
A940 15 $60.00 n-type GaP:S [100-2.0° towards[101]] ±1.0° 48.25mm 280 ±15 P/E ELMA 0.050-0.125 (4-14)E17 70-130   2 Flats, PF @ <0,1,-1>±1°, SF 135° CW from PF; Sold in sealed cassette of 15 wafers
H940 5 $200.00 n-type GaP:S [100-2° towards[110]] ±0.3° 48.25mm 300 ±50 P/E ElmaT 0.050-0.125 (4-14)E17 70-130   2 Flats, PF @ <0,1,-1>±1°, SF 135° CW from PF; Sold in sealed cassettes of 5 wafers
12460 2 $1,695.20 n-type GaP:S [110] ±0.5° 15x30 400 ±50 P/P ITME 8E-2 8E17 100 <4E4 Epi Ready
A1786 3 $590.00 n-type GaP:S [111B] ±0.5° 2" 400 P/E ITME 0.075-0.078 (6.6-6.8)E17 122 <5E4 2 Flats SEMI-US; Epi Ready
10543 1 $590.00 n-type GaP:S [111A] ±0.5° 2" 420 P/E ITME 4.7E-2 1.9E18 85 <8E4 1 Flat; Epi Ready
10992 2 $550.00 p-type GaP:Zn [311] ±0.5° 2" 350 P/E ITME 0.85 1.15E18 64 <2.2E4 2 Flats, PF @ <110>, SF 90° CCW form PF,; Epi Ready

GaSb - Gallium Antimonide
Note: Surface - P = Polished, E = Etched, C = AsCut, G = Ground, Ox = Oxide (on that surface)
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$/wafer		 Material Orient. Diam. Thck
(μm)		 Surf. Source Resistivity
Ωcm		 Nc
a/cm3		 Mobil
cm2/Vs		 EPD
/cm2		 Comment
12183 3 $1,440.00 n-type GaSb:Te [100] 2" 500 P/E NCIT 0.0009-0.0034 (2-15)E17 2,500-3,500 <10,000 EJ Flats; Epi Ready
11653 2 $810.00 undoped GaSb:- [100] 2" 450 P/E ITME p-type 0.066-0.070 (1.4-1.5)E17 632-638 <3,000 US Flats; Epi Ready
A1705 5 $780.00 p-type GaSb:Zn [100] 2" 425 P/E ITME 0.0071-0.0077 (2.4-2.8)E18 314-338 <3,000 SEMI-US Flats; Epi Ready
F179 1 $630.00 p-type GaSb:Zn [100] 2" 450 P/E ITME 0.0079 2.6E18 310 <3,000 EJ Flats; Parameters measured @ 300°K; Epi Ready
G179 1 $420.00 p-type GaSb:Zn [100] 2" 450 P/E ITME 0.0077 2.6E18 310 <3,000 EJ Flats; Epi Ready

InAs - Indium Arsenide
Note: Surface - P = Polished, E = Etched, C = AsCut, G = Ground, Ox = Oxide (on that surface)
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$/wafer		 Material Orient. Diam. Thck
(μm)		 Surf. Source Resistivity
Ωcm		 Nc
a/cm3		 Mobil
cm2/Vs		 EPD
/cm2		 Comment
12566 4 $1,000.00 undoped InAs:- [100] 2" 400 P/E ITME n-type 0.013 (2.2-2.3)E16 21,125-21,649 <100 SEMI US Flats; Epi Ready

InP - Indium Phosphide
Note: Surface - P = Polished, E = Etched, C = AsCut, G = Ground, Ox = Oxide (on that surface)
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$/wafer		 Material Orient. Diam. Thck
(μm)		 Surf. Source Resistivity
Ωcm		 Nc
a/cm3		 Mobil
cm2/Vs		 EPD
/cm2		 Comment
12504 5 $620.00 SI InP:Fe [100] ±0.2° 3" 625 P/E InPACT >1E7     <3E4 EJ Flats; Epi Ready
D745 12 $110.00 SI InP:Fe cube [100] 8×4 3,500 P/P Comsec 2.5E7 1.3E8 2,330 6.8E4 All sides polished, 8.0×4.0mm is (001), 4.0×3.5mm is (110), 8.0×3.5mm is (1,-1,0)
F745 3 $300.00 undoped InP:- Seed crystal [100] 16x16 75,000   Comsec n-type       Seed crystal sides are [011] & {01-1]; 92g
G745 7 $140.00 undoped InP:-Seed crystal [100] 8x8 mm 75,000   Comsec n-type       Seed crystal sides are [0,1,1] & [0,1,-1]; 23g
12646 10 $496.80 n-type InP:S [100-0.2° towards[110]] ±0.05° 50mm 350 P/E InPACT due 7/22 0.001 (3-5)E18 1,500 <500 EJ Flats; Epi Ready
12479 5 $450.00 n-type InP:S [100] ±0.2° 2" 350 P/E InPACT 0.001 (3-5)E18 1,500 <500 EJ Flats; Epi Ready, Back-Side LaserMark
B745 7 $280.00 n-type InP:S [100] 2" 2,000 ±50 P/E Comsec 0.0011 3.6E18 1,530 <1.1E4 SEMI Flats; Epi Ready
11651 1 $370.00 n-type InP:S [100] 2" 400 P/E ITME 0.0010-0.0011 (3.8-4.3)E18 1,417-1,490 <2E4 EJ Flats; Edge Chips, Epi Ready, Individual cst
12672 20 $400.00 p-type InP:Zn [100-2° towards[110]] ±0.1° 50mm 350 P/E InPACT due 7/29   >1E18   <500 EJ Flats; Epi Ready
A2646 10 $460.00 p-type InP:Zn [100-2° towards[110]] ±0.1° 50mm 350 P/P InPACT due 7/22   >1E18   <500 EJ Flats; Epi Ready
W206 1 $200.00 InP Ingot Poly 2" 15mm   Comsecore         Ingot piece 15mm×16mm×60mm, $200 for whole piece
L206 0.55 $800.00 InP:(S+Zn) Ingot [100] 2"     Comsecore #P_047 ~0.028 ~4.5E18 ~45 0.1E4 Two small Ingot ends
J206 1.35 $1,500.00 n-type InP:S Ingot [100] 2" 133,400   Comsecore #625 (1.3-0.7)E-3 (3.2-7.7)E18 1,500 - 1,200 2.0E4 3 ingots 133.4mm total
2206 1.2 $1,500.00 n-type InP:S Ingot [100] 2" 41, 22, 54   Comsecore #623 (1.40-0.71)E-3 (3.0-7.5)E18 1,460 - 1,190 1.0E4 3 ingots 117mm total
N206 1.41 $1,500.00 n-type InP:S Ingot [100] 2" 114,300   Comsecore #P_93 (1.0-0.9)E-3 (4.3-9.8)E18 1,490 - 1,200 4.0E4 Ingot 114mm long
M206 1.4 $1,500.00 n-type InP:S Ingot [100] 2" 95,000   Comsecore #P_088 (2.70-0.97)E-3 (1.2-4.3)E18 2,130 - 1,500 4.0E4 Ingot 95mm long
R206 3 $800.00 n-type InP:S Ingot [100] 2" 102   Comsecore #P_109 (1.80-0.77)E-3 (2.1-6.3)E18 1,730 - 1,300 4.0E4 Ingot 102mm long
S206 0.45 $800.00 n-type InP:S Ingot Poly 2" 20,000   Comsecore #P_110         Ingot 20mm long
K206 0.66 $1,500.00 n-type InP:S Ingot [100] 2" 63,500   Comsecore #507 (1.3-0.5)E-3 (4.5-16.5)E18 1,230 - 813 1.5E4 Ingot 63.5mm long
Q206 1.48 $1,500.00 n-type InP:S Ingot [100] 2" 158   Comsecore #525 (1.30-0.55)E-3 (3.1-11.0)E18 1,560 - 1,100 1.0E4 Ingot 159mm long

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