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Updated: Oct 15 2018
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Compound Semiconductors

GaAs - Gallium Arsenide, GaP - Gallium Phosphide, GaSb - Gallium Antimonide, InAs - Indium Arsenide, InP - Indium Phosphide, InSb - Indium Antimonide
GaAs - Gallium Arsenide
Note: Surface - P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that surface)
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Stock		 Price
$/wafer		 Material Orient. Diam
(mm)		 Thck
(μm)		 Surf. Source Resistivity
Ωcm		 Nc
a/cm3		 Mobil
cm2/Vs		 EPD
/cm2		 Comment
G180 1 $99.00 undoped SI GaAs:-   2" 350 P/E AXT n-type >1E7       2 Flats; Epi Ready
J180 5 $99.00 undoped SI GaAs:-   2" 350 P/G AXT n-type >1E7       SEMI-Test (shallow pits) NO Flats; Epi Ready, Group of 5 wafers
5538 2 $780.00 undoped SI GaAs:- [100] 4" 2,000 P/P Xiamen n-type >1E7       EJ Flats; Epi Ready
6156 23 $250.00 undoped SI GaAs:- [100] 2" 110 ±15 P/P Xiamen n-type Ro>1E7     <3,200 VGF; EJ Flats; Epi Ready
D876 12 $100.00 undoped SI GaAs:- [100] 2" 325 P/P SZ n-type >1E7   >3,000 <5,000 VGF; EJ Flats; Epi Ready
5876 47 $99.00 undoped SI GaAs:- [100] 2" 500 P/E SZ n-type >1.0E7   >4,000 <5,000 VGF; EJ Flats; Epi Ready
6093 2 $260.00 undoped SI GaAs:- [100] 2" 380 P/E ITME n-type 9.67E7 1.15E7 5,590 <7E4 2 Flats; Epi Ready
H093 1 $260.00 undoped SI GaAs:- [100] 2" 500 P/E ITME n-type 9.5E7 1.2E7 5,360 <6E4 2 Flats; Epi Ready
6350 2 $290.00 undoped SI GaAs:- [110] ±0.5° 2" 350 P/P ITME n-type 9.7E7-11.8E7 (1.06-1.23)E7 4,985-5,222 <3.2E4 Flats PF @ [1,-1,0], SF @ [001]; Epi Ready
5628 1 $290.00 undoped SI GaAs:- [310] ±0.5° 2" 400 P/E ITME n-type 5.5E7 1.9E7 5,800 <1,400 SEMI Flats(two); with Minor Scratches
E876 1 $290.00 n-type GaAs:Si [100-15° towards[111A]] ±0.5° 4" 350 ±20µm P/E SZ   (0.4-4.0)E18 >1,000 <5,000 VGF; EJ Flats; Epi Ready
6418 50 $200.00 n-type GaAs:Si [100-2.0° towards[110]] ±0.5° 4" 350 P/E SZ due 10/24 0.0012-0.0099 (2-4)E18 1,500-2,500 <3,000 EJ Flats; Epi Ready; TTV<10μm, Bow<15μm, Warp<15μm
5536 5 $100.00 n-type GaAs:Si Poly. 2" 500 P/E CMK   (1-9)E17     NO Flats; Large Grain Polycrystalline GaAs
5881 2 $280.00 n-type GaAs:Te [111] ±0.5° 1" 500 P/P ITME 0.00245 8.21E17 3,101 <5E4 NO Flats; Epi Ready
5490 1 $260.00 p-type GaAs:Zn [100] 2" 400 P/E ITME 1.3-420.0 (9-29)E15 47-163 <5E4 EJ Flats; Epi Ready
6165 2 $260.00 p-type GaAs:Zn [100] 2" 300 P/P ITME 1.81 2.46E16 140 <5E4 Epi Ready
5860 1 $260.00 p-type GaAs:Zn [100] 2" 375 P/E ITME 0.49-0.96 (2.8-6)E16 214-232 <5E4 US Flats; Epi Ready
5882 1 $260.00 p-type GaAs:Zn [100] 2" 375 P/E ITME 0.33 8.6E16 225 <6E4 US Flats; Epi Ready
H180 2 $290.00 p-type GaAs:Zn [100-6° towards[110]] ±0.5° 2" 350 P/E Accur 0.0030 - 0.0065 (1.0-2.7)E19 75-84 <1,906 VGF; EJ Flats; Epi Ready
6272 1 $290.00 p-type GaAs:Zn [111B] ±0.5° 2" 300 P/E ITME 0.10-0.12 (2.8-3)E17 193-208 <5.7E4 SEMI Flats; Epi Ready
2295A 2 $200.00 undoped SI GaAs:- [100-4° towards[111A]] ±0.5° 51.3mm 380 P/E ITME aro 2 wks n-type 7.4E7 1.7E7 5,000 <8E4 SEMI Flats; Epi Ready
2237 1 $780.00 undoped SI GaAs:- [100] 2" 6,700 P/P ITME aro 2 wks n-type 1.1E8 1.1E7 5,000 <1E5 NO Flats; Epi Ready
2328C 1 $725.00 undoped SI GaAs:- [100] 2" 5,000 P/E ITME aro 2 wks n-type 4E7 2.7E7 5,700 <5.3E4 SEMI Flats; Epi Ready
2308B 1 $295.00 undoped SI GaAs:- [310] ±0.5° 2" 400 P/E ITME aro 2 wks n-type 5.5E7 1.9E7 5,800 <1,400 EJ Flats; Epi Ready; minor edge chips

GaP - Gallium Phosphide
Note: Surface - P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that surface)
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Stock		 Price
$/wafer		 Material Orient. Diam
(mm)		 Thck
(μm)		 Surf. Source Resistivity
Ωcm		 Nc
a/cm3		 Mobil
cm2/Vs		 EPD
/cm2		 Comment
5529 1 $460.00 SI GaP:Cr [100] 2" 400 P/E ITME 2E10 4.1E6 75 <5E4 US Flats; TEST grade (Black spots on surface)
K460 1 $450.00 undoped GaP:- [100] 2" 400 P/E ITME n-type >1E12 <1E4 <50   Semi-Insulating, may have subsurface bubbles <20μmØ
Y363 1 $400.00 undoped GaP:- [110] ±0.5° 25×25 1,000 P/P ITME n-type >1E12 <1E4   <5E4 Epi Ready, Material might have some vapor bubbles
G543 1 $300.00 undoped GaP:- [110] ±0.5° 5×6 400 P/P ITME n-type >0.9 <5E16 140 <4.7E4 Ohmic Contacts on the 0.4x6mm edges, SI (Semi-Insulating)
4898 1 $425.00 undoped GaP:- [111B] ±0.5° 2" 400 P/E ITME n-type 240 1.6E14 160 <5E4 EJ Flats, Epi Ready
5986 1 $445.00 n-type GaP:S [100-10° towards[110]] ±1° 2" 302 P/E ITME 0.115 4.75E17 115 <8E4 EJ Flats; Epi Ready
6370 2 $580.00 n-type GaP:S [100] 2" 450 P/P ITME 0.095-0.110 (4.9-5.7)E17 110-112 <5E4 EJ Flats; Epi Ready
6261 3 $510.00 n-type GaP:S [100] 2" 350 P/P ITME 0.037-0.041 (1.7-1.9)E18 87-90 <6E4 US Flats; Epi Ready
I920 2 $435.00 n-type GaP:S [100-6° towards[111B]] ±1° 2" 400 P/E ITME 0.0375 2.3E18 72 <5.8E4 EJ Flats; Epi Ready
D986 1 $550.00 n-type GaP:S [111B] ±0.5° 2" 400 P/E ITME 0.097 (5.9-8.7)E17 110-120 <8E4 EJ Flats (PF@[-1,1,0], SF@[1,1,-2]), Epi Ready
6142 1 $550.00 p-type GaP:Zn [100] 2" 450 P/E ITME 0.0775 1.35E18 60 <5E4 SEMI Flats, Epi Ready
6169 2 $550.00 p-type GaP:Zn [100] 2" 400 P/E ITME due 10/15 0.045-0.053 >2E18 58-64 <5E4 SEMI Flats, Epi-Ready
99B 15 $445.00 p-type GaP:Cd [100] 2" 400 C/C ITME aro 5 wks 2.2 2.5E16 120 <8E4 P/E or P/P, SEMI/EJ Flats, to be polished, MOQ=5 wafers
261 1 $445.00 undoped GaP:- [100] 2" 450 P/E ITME aro 2 wks n-type >34 <1.21E15 60-140 <5E4 SEMI Flats; Bubbles near edge
358A 1 $455.00 undoped GaP:- [100] 2" 400 P/E ITME aro 2 wks n-type >1E12 <1E4 <50   Semi-Insulating, may have subsurface bubbles <20μmØ
358B 4 $395.00 undoped GaP:- [100] 2" 400 P/P ITME aro 3-5 wks n-type >1E12 <1E4 <50   Semi-Insulating, wafers have a crystal twinning fault 0.5 to 4mm from edge, 95% of area is perfect
287A 2 $455.00 undoped GaP:- [100] 2" 450 C/C ITME aro 5 wks n-type 1E7 4E9 161 <5.3E4 P/E or P/P, SEMI/EJ Flats, to be polished, MOQ=5 wafers
112 1 $455.00 undoped GaP:- [100] 2" 600 P/P ITME aro 2 wks n-type 2.15 1.6E16 170 <6.2E4 Epi Ready; Back-side has micro-scratches
249B 1 $1169.00 undoped GaP:- [100] 2" 5,000 C/C ITME aro 2 wks n-type 0.17-0.24 (2-3.2)E17 119-130 <8E4 Unpolished
337 8 $430.00 undoped GaP:- [111B] ±0.5° 2" 400 P/E ITME aro 5 wks n-type >240 <1.6E14 150-160 <8E4 111A/111B, SEMI/EJ Flats, P/E or P/P, to be polished, MOQ=5 wafers
166 9 $455.00 undoped GaP:- [111B] ±0.5° 2" 400 C/C ITME aro 5 wks n-type >0.35 <1E17 >140 <5E4 111A/111B, SEMI/EJ Flats, P/E or P/P, to be polished, MOQ=5 wafers
337B 1 $445.00 undoped GaP:- [111B] ±0.5° 2" 400 P/E ITME aro 2 wks n-type 160 1.6E14 160 <5E4 EJ Flats, TEST grade - 6mm scratch 5mm from edge
252A 1 $445.00 undoped GaP:- [111B] 2" 400 P/E ITME aro 3 wks n-type 86 4E14 180 <6E4 EJ Flats, Minor defects on the edge
349 9 $455.00 undoped GaP:- [111B] ±0.5° 2" 400 C/C ITME aro 5 wks n-type 2.3-3.2 (1.2-1.6)E16 165 <5E4 111A/111B, SEMI/EJ Flats, P/E or P/P, to be polished, MOQ=5 wafers
88C 1 $395.00 n-type GaP:S [100-2° towards[111]] ±0.5° 2" 400 P/E ITME aro 2 wks 0.20 2.9E17 110 <2E5 SEMI Flats; TEST grade - 0.3mm chip on edge
296C 3 $465.00 n-type GaP:S [100-10° towards[110]] ±1° 2" 300 P/E ITME aro 2 wks 0.115 4.75E17 115 <5E4 EJ Flats; Epi Ready
296 1 $445.00 n-type GaP:S [100-10° towards[110]] ±1° 2" 302 ±20 P/E ITME aro 2 wks 0.115 4.75E17 115 <8E4 EJ Flats; Epi Ready
280 2 $445.00 n-type GaP:S [100-10° towards[110]] ±1° 2" 302 ±20 P/E ITME aro 2 wks 0.11 4.79E17 112 <5.5E4 EJ Flats; Epi Ready
296D 20 $475.00 n-type GaP:S [100] 2" 350 P/P ITME Aro 4-6 wks 0.115 (4.8-5.7)E17 115 <5E4 SEMI/EJ Flats, P/E or P/P, to be polished, MOQ=5 wafers
268 2 $445.00 n-type GaP:S [100-10° towards[110]] ±1° 2" 302 P/E ITME aro 2 wks 0.11 5.3E17 105 <8.9E4 EJ Flats; Epi Ready
304D 10 $475.00 n-type GaP:S [100] 2" 350 P/P ITME aro 4-6 wks 0.064 9E17 106 <6E4 SEMI/EJ Flats, P/E or P/P, to be polished, MOQ=5 wafers
78B 1 $440.00 n-type GaP:S [100-6° towards[111]] ±1° 2" 400 P/E ITME aro 2 wks 0.058 9.9E17 107 <5.3E4 SEMI Flats; Epi Ready
244 3 $445.00 n-type GaP:S [100-10° towards[011]] ±1° 2" 350 ±10 P/E ITME aro 2 wks 0.051 1.4E18 88 <6.6E4 SEMI Flats; Epi Ready
129B 23 $570.00 n-type GaP:S [100] 2" 350 P/P ITME aro 4-6 wks 0.064 (1.7-1.9)E18 87-90 <6E4 SEMI/EJ Flats, P/E or P/P, to be polished, MOQ=5 wafers
010C 1 $440.00 n-type GaP:S [111B-6° towards[1,1,2]] ±1° 2" 400 P/E ITME aro 2 wks 0.140 4.1E17 107 <6E4 SEMI Flats; Epi Ready
009 3 $445.00 n-type GaP:S [111B] ±0.5° 2" 275 P/E ITME aro 2 wks 0.136 4.37E17 105 <5E4 NO Flats; Epi Ready
010A 2 $440.00 n-type GaP:S [111A-6° towards[112]] ±1° 2" 400 P/E ITME aro 2 wks 0.125 4.5E17 110 <6E4 EJ Flats (PF@[1,-1,0], SF@[-1,-1,2]), Epi Ready
012B 1 $550.00 n-type GaP:S [111B] ±0.5° 2" 400 P/E ITME aro 2 wks 0.075 8.6E17 96 <7.8E4 EJ Flats (PF@[-1,1,0], SF@[1,1,-2]); Epi Ready
148C 1 $425.00 n-type GaP:S [111A] ±0.5° 2" 350 P/E ITME aro 2 wks 0.043 1.6E18 90 <1.3E5 SEMI Flats; Epi Ready
148A 1 $445.00 n-type GaP:S [111A] ±0.5° 2" 350 P/E ITME aro 2 wks 0.042 2E18 76 <2E5 SEMI Flats; TEST grade, not fully polished
148B 1 $445.00 n-type GaP:S [111B] 2" 400 P/P ITME aro 2 wks 0.041 2E18 72 <2E5 EJ Flats; TEST grade - Small scratch
285C 1 $485.00 p-type GaP:Zn [100] 2" 1,000 P/E ITME aro 2 wks 0.088 1.3E18 56 <4E4 SEMI Flats; Epi Ready
319 2 $500.00 p-type GaP:Zn [111B] ±0.5° 2" 450 P/E ITME aro 2 wks 0.069-0.074 (1.3-1.4)E18 65-66 <5E4 SEMI Flats; Epi Ready
319B 2 $470.00 p-type GaP:Zn [111B] ±0.5° 2" 400 P/P ITME aro 2 wks 0.069-0.074 (1.3-1.4)E18 65-66 <5E4 SEMI Flats; Epi Ready
243A 10 $455.00 p-type GaP:Zn [311] ±0.5° 2" 350 P/E ITME aro 2 wks 0.085 1.15E18 64 <2.2E4 SEMI Flats; Epi Ready

GaSb - Gallium Antimonide
Note: Surface - P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that surface)
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$/wafer		 Material Orient. Diam
(mm)		 Thck
(μm)		 Surf. Source Resistivity
Ωcm		 Nc
a/cm3		 Mobil
cm2/Vs		 EPD
/cm2		 Comment
Q141 1 $430.00 undoped GaSb:- [100] 2" 450 P/E ITME p-type 0.073 1.2E17 694 <3,000 US Flats(two); Measured at 300°K; Price for polished wafers
G437 1 $490.00 undoped GaSb:- [100] 2" 400 P/E ITME p-type 0.072 1.23E17 695 <3,000 US Flats; Measured @ 300°K; Epi Ready
D448 2 $425.00 p-type GaSb:Zn [111B] ±0.5° 2" 450 P/E ITME 0.0029 7E18 300 <1,700 US Flats; Measured @ 300°K; Epi Ready
GaSb28 23 $430.00 undoped GaSb:- [100] 2" 450 C/C ITME Aro 1-2 wks p-type 0.073 1.2E17 694 <3,000 US Flats(two); Measured at 300°K; Price for polished wafers
GaSb28B 1 $455.00 undoped GaSb:- [100] 2" 325 P/E ITME aro 3 weeks p-type 0.072 1.27E17 695 <3,000 US Flats; Measured @ 300°K; Epi Ready
GaSb24B 2 $430.00 p-type GaSb:Zn [100] 2" 450 P/E ITME aro 4 wks 0.00790 2.6E18 310 <3,000 EJ Flats; Epi Ready
GaSb24D 4 $430.00 p-type GaSb:Zn [100] 2" 610 C/C ITME aro 1-2 wks 0.0079 2.6E18 310 <3,000 EJ Flats (66-98)mm; Price for Polished wafers
GaSb24C 10 $475.00 p-type GaSb:Zn [100-6.0° towards[111]] ±0.5° 2" 550 C/C ITME aro 1-2 wks 0.0074 2.6E18 320 <3,000 EJ Flats (42-52)mm; Price for Polished wafers
GaSb23C 8 $475.00 p-type GaSb:Zn [100-6° towards[111]] ±0.5° 2" 380 P/E ITME aro 3 weeks 0.00415 5.43E18 275 <3,000 US Flats; Measured @ 300°K; Epi Ready
GaSb23 4 $430.00 p-type GaSb:Zn [100] 2" 450 C/C ITME aro 1-2 weeks 0.0043 5.5E18 265 <2,000 US Flats; Price for polished wafers
GaSb23B 2 $430.00 p-type GaSb:Zn [100] 2" 450 P/E ITME aro 3 weeks 0.0039-0.0040 5.6E18 278 <2,000 US Flats; Measured @ 300°K; Epi Ready
GaSb26 1 $430.00 p-type GaSb:Zn [111B] ±0.5° 2" 450 P/E ITME aro 3 wks 0.0029 7E18 300 <1,700 US Flats; Measured @ 300°K; Epi Ready

InAs - Indium Arsenide
Note: Surface - P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that surface)
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Stock		 Price
$/wafer		 Material Orient. Diam
(mm)		 Thck
(μm)		 Surf. Source Resistivity
Ωcm		 Nc
a/cm3		 Mobil
cm2/Vs		 EPD
/cm2		 Comment
C779 1 $590.00 undoped InAs:- [100] 3" 500 P/E ITME n-type 0.0125 2.3E16 >21,000 <3,500 EJ Flats; Epi Ready
6278 1 $520.00 undoped InAs:- [100] 2" 500 P/P ITME due 10/16 n-type <3E16   <10,000 EJ Flats; Epi Ready
5651 1 $425.00 undoped InAs:- [100] 2" 400 P/E ITME n-type 0.00627 1.8E16 54,000 <1,000 Epi Ready, (Ro, Nc and Mobility measured at 77ºK), TEST grade - minor edge chips
6150 1 $450.00 undoped InAs:- [100] 2" 350 P/E ITME n-type 0.0121 2.03E16 25,291 <100 EJ Flats; Epi Ready
5499 3 $390.00 n-type InAs:S [111B] ±0.5° 2" 500 P/E Xiamen   (1-30)E17 10,000-25,000 <15,000 2 Flats {PF @ <110>, SF 120° from PF; Epi Ready
5500 15 $355.00 p-type InAs:Zn [100] 2" 500 P/E Xiamen   (1-3)E18 100-130 <10,000 EJ Flats; Epi Ready
130 7 $625.00 undoped InAs:- [100] 3" 500 P/E ITME aro 5 wks n-type ~0.0125 2.3E16 >21,000 <3,500 EJ Flats; Epi Ready
98 2 $450.00 undoped InAs:- [100] 2" 400 P/E ITME aro 1 wks n-type 0.00627 1.8E16 54,000 <1,000 Epi Ready, (Ro, Nc and Mobility measured at 77K), TEST grade - minor edge chips
169C 4 $450.00 undoped InAs:- [100] 2" 500 P/E ITME aro 1 wks n-type 0.0110-0.0125 (2.3-2.7)E16 21,320-21,850   EJ Flats; Epi Ready - TEST grade - Edge Chips on S Flat
169D 50 $490.00 undoped InAs:- [100] 2" 500 P/E ITME aro 6 wks n-type 0.0110-0.0125 (2.3-2.7)E16 21,320-21,850   EJ Flats; Epi Ready
87A 3 $450.00 p-type InAs:Zn [100] 2" 450 P/E ITME aro 3 wks 0.0048-0.0113 (1.1-3.6)E19 116-152 <1,000 Epi Ready, Low EPD, small Flat 180° from PF

InP - Indium Phosphide
Note: Surface - P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that surface)
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$/wafer		 Material Orient. Diam
(mm)		 Thck
(μm)		 Surf. Source Resistivity
Ωcm		 Nc
a/cm3		 Mobil
cm2/Vs		 EPD
/cm2		 Comment
Q948 3 $600.00 SI InP:Fe [100] 6" 657 ±3 P/P Showa 6.9E7-8.5E7   3,300 <10,000 2 Flats; Epi Ready
E950 3 $600.00 SI InP:Fe [100] 6" 677 ±4 P/P Showa 1.3E7-1.7E7   2,700-3,200 <2.2E4 VGF; SEMI Flats; Epi Ready
G950 11 $600.00 SI InP:Fe [100] 6" 680 ±3 P/P Showa 0.9E7-1.6E7   2,800-3,000 <1.8E4 VGF; SEMI Flats; Epi Ready
J948 1 $600.00 SI InP:Fe [100] 6" 676 ±7 P/P Synerg 1.5E7-2.5E7 (1-1.3)E8 2,400-3,100 <9,000 SEMI Flats; Epi Ready
H949 2 $400.00 SI InP:Fe [100] ±0.3° 4" 625 P/P Showa >1E7   >2,000 <5E4 2 Flats; Epi Ready
K948 1 $400.00 SI InP:Fe [100] 4" 650 ±10 P/P Nikko 5.8E7-6E7   3,400 <10,000 2 Flats; Epi Ready
O948 6 $400.00 SI InP:Fe [100] 4" 641 ±1 P/P Nikko 4.2E7-5.3E7   3,200-3,300 <10,000 2 Flats; Epi Ready
G949 1 $400.00 SI InP:Fe [100] 4" 600 P/P ITME >1E7   >2,000 <5E4 2 Flats; Epi Ready
I948 2 $400.00 SI InP:Fe [100] 4" 600 P/P AXT >1E7   >2,000 <5E4 2 Flats; Epi Ready
M949 4 $400.00 SI InP:Fe [100] 4" 630 ±3 P/P Showa 1.6E7-3.7E7   2,800-3,200 <4,000 2 Flats; Epi Ready
O949 4 $290.00 SI InP:Fe [100] ±0.3° 3" 608 ±8 P/P Sumito 6.500-1.3E8   2,900-3,100   VGF; EJ Flats; Epi Ready
Q949 5 $290.00 SI InP:Fe [100] ±0.1° 3" 617 ±9 P/P Nikko 5E7-8.2E7   3,000 <4E4 EJ Flats; Epi Ready
J949 1 $190.00 SI InP:Fe [100] ±0.2° 3" 621 ±6   Showa 4.4E7-8E7   2,800-3,100 <1.4E4 VGF
F950 37 $290.00 SI InP:Fe [100] ±0.3° 3" 585 P/P Sumito 3E7-8E7   3,000   EJ Flats; Epi Ready
H950 5 $290.00 SI InP:Fe [100] ±0.1° 3" 608 ±5 P/E Showa 2.2E7-7.9E7   2,400-2,800 <5.1E4 US Flats; Epi Ready
L949 3 $290.00 SI InP:Fe [100-2.0° towards[110]] ±0.5° 3" 638 ±3 P/P Showa 2.1E7-2.5E7   2,600-2,800 <2.3E4 EJ Flats; Epi Ready
L948 11 $149.00 SI InP:Fe [100] ±0.3° 3" 625 P/P Nikko >1E7   >2,000 <5E4 EJ Flats; Mechanical grade
H948 27 $149.00 SI InP:Fe [100] ±0.11° 3" 620 ±5 P/P Nikko         EJ Flats; Mechanical grade
R949 6 $149.00 SI InP:Fe [100] ±0.1° 3" 620 ±1 P/P Nikko         EJ Flats; Mechanical grade
I949 5 $149.00 SI InP:Fe [100] ±0.11° 3" 622 ±4 P/P Nikko         EJ Flats; Mechanical grade
P949 2 $149.00 SI InP:Fe [100] ±0.11° 3" 624 ±1 P/P Nikko         EJ Flats; Mechanical grade
N948 2 $149.00 SI InP:Fe [100] ±0.11° 3" 625 ±2 P/P Nikko         EJ Flats; Mechanical grade
K949 2 $149.00 SI InP:Fe [100] ±0.2° 3" 633 P/P Nikko         EJ Flats; Mechanical grade
M948 1 $290.00 SI InP:Fe [100-0.20°] ±0.01° 3" 595 ±10 P/E Showa 1.6E7-2.9E7 (9-17)E7 2,600-2,800 <1.7E4 EJ Flats; Epi Ready
K180 9 $99.00 SI InP:Fe [100-0.2° towards[110]] ±0.1° 2" 350 P/E InPACT 5.2E7       SEMI-TEST (scratches), EJ Flats, Epi-Ready
O180 1 $99.00 SI InP:Fe [100] 2" ~350 P/E Sumito >~1E7       2 Flats; Epi Ready
5243 2 $190.00 SI InP:Fe [100] 2" 350 P/E AXT >1E7   >2,000 <5,000 EJ Flats; Epi Ready
C745 3 $390.00 SI InP:Fe cube [100] 8x4 3,500 P/P Comsec 8.1E7 3.1E7 2,460 <6.8E4 All sides polished, 8×4mm is (001), 4×3.5mm is (110), 8×3.5mm is (1,-1,0)
D745 18 $290.00 SI InP:Fe cube [100] 8×4 3,500 P/P Comsec 2.5E7 1.3E8 2,330 6.8E4 All sides polished, 8.0×4.0mm is (001), 4.0×3.5mm is (110), 8.0×3.5mm is (1,-1,0)
G948 2 $600.00 undoped InP:- [100-0.21°] ±0.5° 6" 679 ±6 P/P Synerg n-type 0.53-4.65 (5-28)E14 2,850-4,500 <1.15E5 SEMI Flats; Epi Ready
F745 3 $996.00 undoped InP:- Seed crystal [100] 16x16 75,000   Comsec n-type       Seed crystal sides are [011] & {01-1]; 92g
G745 9 $296.00 undoped InP:-Seed crystal [100] 8x8 mm 75,000   Comsec n-type       Seed crystal sides are [0,1,1] & [0,1,-1]; 23g
K661 3 $280.00 undoped InP:- [111A] ±0.5° 2" 350 P/E Xiamen n-type 0.046-0.612 (6-30)E15 >1,700 <5E4 EJ Flats; Epi Ready
B745 7 $390.00 n-type InP:S [100] 2" 2,000 P/E Comsec 0.0011 3.6E18 1,530 <1.1E4 SEMI Flats; Epi Ready
5809 1 $249.00 n-type InP:S [100] 2" 400 P/E ITME n-type 0.000570 8.24E18 1,330 <10,000 US Flats; Epi Ready
L180 4 $290.00 p-type InP:Zn [100-2° towards[111]] ±0.1° 2" 350 P/E InPACT p-type 4.1E18   <500 EJ Flats; Epi Ready
L206 0.55 $800.00 InP:(S+Zn) Ingot [100] 2"     Comsecore #P_047 ~0.028 ~4.5E18 ~45 0.1E4 Two small Ingot ends
J206 1.35 $1500.00 n-type InP:S Ingot [100] 2" 133,400   Comsecore #625 (1.3-0.7)E-3 (3.2-7.7)E18 1,500 - 1,200 2.0E4 3 ingots 133.4mm total
2206 1.2 $1500.00 n-type InP:S Ingot [100] 2" 117,490   Comsecore #623 (1.40-0.71)E-3 (3.0-7.5)E18 1,460 - 1,190 1.0E4 3 ingots 117mm total
N206 1.41 $1500.00 n-type InP:S Ingot [100] 2" 114,300   Comsecore #P_93 (1.0-0.9)E-3 (4.3-9.8)E18 1,490 - 1,200 4.0E4 Ingot 114mm long
M206 1.4 $1500.00 n-type InP:S Ingot [100] 2" 95,000   Comsecore #P_088 (2.70-0.97)E-3 (1.2-4.3)E18 2,130 - 1,500 4.0E4 Ingot 95mm long
R206 3 $800.00 n-type InP:S Ingot [100] 2" 101,600   Comsecore #P_109 (1.80-0.77)E-3 (2.1-6.3)E18 1,730 - 1,300 4.0E4 Ingot 102mm long
S206 0.45 $800.00 n-type InP:S Ingot Poly 2" 20,000   Comsecore #P_110         Ingot 20mm long
K206 0.66 $1500.00 n-type InP:S Ingot [100] 2" 63,500   Comsecore #507 (1.3-0.5)E-3 (4.5-16.5)E18 1,230 - 813 1.5E4 Ingot 63.5mm long
I206 0.26 $1500.00 n-type InP:S Ingot [100] 2" 28,600   Comsecore #P_043 (0.8-0.5)E-3 (5.5-8.8)E18 1,300 - 1,100 2.0E4 Ingot 29mm long
Q206 1.48 $1500.00 n-type InP:S Ingot [100] 2" 158,750   Comsecore #525 (1.30-0.55)E-3 (3.1-11.0)E18 1,560 - 1,100 1.0E4 Ingot 159mm long
P050 5 $300.00 n-type InP:(S+Zn) [100] 2" 400 P/E ITME aro 12 wks 0.0203 3.8E17 810 <4.2E4 SEMI Flats; Epi Ready
P040 1 $325.00 n-type InP:S [100] 2" 350 P/E ITME aro 12 wks 8.89E-4 4.96E18 1,418 <2.9E4 EJ Flats; Epi Ready
P029 4 $305.00 n-type InP:S [100] 2" 400 P/E ITME aro 12 wks 5.7E-4 8.24E18 1,330 <10,000 SEMI Flats; Epi Ready
474A 3 $300.00 n-type InP:S [100] 2" 400 P/E ITME aro 12 wks 8.08E-4 9.18E18 1,110 <5E4 SEMI Flats; Epi Ready
474 4 $300.00 n-type InP:S [100] 2" 400 P/E ITME aro 12 wks 7.08E-4 9.3E18 950 <1,000 EJ Flats; Epi Ready
636 4 $335.00 n-type InP:S [115] 2" 400 P/E ITME aro 12 wks 1.08E-3 4.07E18 1,416 <3.7E4 NO Flats, Epi Ready

InSb - Indium Antimonide
Note: Surface - P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that surface)
Add to
Cart		 Item Qty in
Stock		 Price
$/wafer		 Material Orient. Diam
(mm)		 Thck
(μm)		 Surf. Source Resistivity
Ωcm		 Nc
a/cm3		 Mobil
cm2/Vs		 EPD
/cm2		 Comment
6428 10 $340.00 undoped InSb:- [100] 2" 500 P/E Xiamen due 11/12 n-type <2E14     US Flats; Epi Ready
5138 8 $390.00 n-type InSb:Te [111A] ±0.5° 2" 525 P/P Xiamen 0.0230-0.0313 (3-8)E14 400,000-450,000 <50 1 Flat; Epi Ready

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