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Updated: May 24 2017
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SiC Wafers

SiC Wafers
Note: Surface - P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that surface)
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(mm)
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(μm)
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Ohmcm
Comment
3684 4 $56.00 n-type SiC:N (4H) <0001>±0.5° 10×10 330 P/E Xiamen 0.02-0.10 1cm×1cm Squares, MicroPipeDensity<6/cm², Epi-Ready, Surface Roughness: <0.2 nm; Grade D - useable area > 70%.
3989 2 $280.00 n-type SiC:N (6H) <0001>±0.5° 2" 330 P/E Xiamen 0.02-0.20 MicroPipeDensity<100/cm² {<7/cm²}, Epi-Ready, Surface Roughness: <0.2 nm; Grade D - Useable area > 70%; PFlat 16mm @ [1,0,-1,0]±5º. Sflat 8mm 90º CW from PF, Sealed in individual containers

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