Updated Thu 29 July 2010
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SiC Wafers

Note: Surface - P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that layer)
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9532 15 49.60 n-type SiC (6H) on-axis 10×10 430 P/E Xiamen 0.02-0.20 Ra<1 nm, Usable area>85%, Epi-Ready; Sealed 5 wafers/cst

AH81d 5 360.00 n-type SiC:N (4H) [0001] 2" 330 P/P Xiamen Grade C Ra<0.5 nm, MPD<50 cm-2, RT<0.1 Ohmcm, Bow/Warp/TTV<25um

AH81c 5 320.00 n-type SiC:N (4H) [0001] 2" 330 P/P Xiamen Grade C Ra<0.5 nm, MPD<100 cm-2, RT<0.2 Ohmcm, Bow/Warp/TTV<35um

AH81b 5 360.00 n-type SiC:N (6H) [0001] 2" 330 P/P Xiamen Grade C Ra<0.5 nm, MPD<50 cm-2, RT<0.2 Ohmcm, Bow/Warp/TTV<25um

AH81 5 320.00 n-type SiC:N (6H) [0001] 2" 330 P/E Xiamen Grade D Ra<0.5 nm, MPD<100 cm-2, RT<0.3 Ohmcm, Bow/Warp/TTV<35um
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