Silicon Wafer Inventory

Properties of Silicon

Material	Type	Dopant	Orientation	Diameter	Thickness	Surface	Resistivity
							-

Updated Thu 29 July 2010
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Silicon Wafers - Prime & Test Wafers

6" Wafers, 5" Wafers, 4" Wafers, 3" Wafers, 2" Wafers, 1" Wafers

6" Wafers

Note: Surface - P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that layer); Material - CZ unless noted
Note: Items sold in quantities of 25, unless noted

Item	Qty in Stock	Price $/unit	Material	Orient.	Diam (mm)	Thck (μm)	Surf.	Source	Resistivity Ωcm	Comment
1113	50	102.00	p-type Si:B	[100]	6"	525 ±10	P/P	MEMS	FZ 700-1,000	SEMI Prime, 1Flat (57.5mm), Empak cst
9234	25	130.00	n-type Si:P	[100]	6"	300	P/P	SPC	FZ >3,000	SEMI, 1Flat 57.5mm, Empak cst, Lifetime>1,000µs
8785	1	75.00	p-type Si:B	[110] ±0.25°	6"	625 ±15	P/E	CEMAT	10-20 {15.4-17.2}	SEMI Prime, 1 JEIDA Flat @ [111]±0.5º, Empak cst with minor scratches
9160	25	67.60	p-type Si:B	[110] ±1°	6"	625 ±15	P/E	CEMAT	10-20 {13.4-15.6}	SEMI Prime, 1 JEIDA Flat at alternate [111], Empak cst, TTV<6µm
D785	7	90.00	p-type Si:B	[110] ±0.25°	6"	625 ±15	P/E	CEMAT	10-20 {12.9-16.1}	SEMI Prime, 1 JEIDA Flat @ [111]±0.5º, Empak; 2 cassettes{5+2=7 wafers}
9981	25	39.60	p-type Si:B	[100]	6"	525 ±10	P/E	Wollem	700-1,300	Empak cst
J981	24	29.60	p-type Si:B	[100]	6"	625 ±15	P/E	Wollem	12-16	SEMI, Empak cst
H981	25	29.60	p-type Si:B	[100]	6"	625 ±15	P/E	Wollem	8.5-11.5	Empak, cassettes of 10 & 15 wafers
9751	25	39.60	p-type Si:B	[100]	6"	1,000	P/E	Prolog	1-100	SEMI Prime, 1Flat (57.5mm), hard cst
C909	150	29.60	p-type Si:B	[100]	6"	675	P/E	Prolog	1-10	SEMI Prime, 2Flats, Empak cst
H698	100	29.60	p-type Si:B	[100]	6"	675	P/E	Prolog	1-100	SEMI Prime, 1Flat
9623	25	35.60	p-type Si:B	[100]	6"	675	P/E	Prolog	0.5-100.0	Prime, NO Flats, hard cst
B623	50	29.60	p-type Si:B	[100]	6"	675	P/E	Prolog	0.5-100.0	SEMI Prime, 1Flat (57.5mm), hard cst
C623	23	49.60	p-type Si:B	[100]	6"	675	P/E	Prolog	0.5-100.0	SEMI Prime, 1Flat (57.5mm), hard cst cassettes of 10 wafers, 8 wafers, 5 wafers
9023	66	48.00	p-type Si:B	[111-4.0°] ±0.5°	6"	625	P/E	CEMAT	4-15 {7.1-8.8}	SEMI Prime, 1Flat 47.5mm, Empak cst
I981	71	39.60	n-type Si:P	[100]	6"	525 ±10	P/E	Wollem	700-1,300	Empak cst
G981	24	29.60	n-type Si:Sb	[100]	6"	675	P/E	Wollem	0.01-0.02	Empak cst
E981	27	29.60	n-type Si:Sb	[100]	6"	675	P/E	Wollem	0.005-0.020	Empak cst, cassettes of 8 wafers, 19 wafers
B981	50	29.60	n-type Si:As	[100]	6"	625	P/E	Wollem	0.0015-0.0040	Empak cst
C981	25	29.60	n-type Si:As	[100]	6"	625	P/E	Wollem	0.0015-0.0040	Empak cst
D981	25	29.60	n-type Si:As	[100]	6"	625	P/E	Wollem	<0.003	Empak cst
F981	48	39.60	n-type Si:P	[100]	6"	508 ±15	P/E	Wollem	<0.0015	Empak cst, Cassettes of 24 wafers, "Red Phos."
F191	25	59.20	n-type Si:As	[100]	6"	1,300	P/E	SPC due 9/15	?
8132	100	59.60	p-type Si:B	[100]	6"	635 ±12	OxP/POx	CEMAT	20-60 {24.7-31.5}	SEMI Prime, 1Flat(57mm) TTV<7µm, Bow/Warp<35µm; Thermal Oxide 0.50±0.05µm
8951	43	59.60	p-type Si:B	[100]	6"	625	OxP/POx	CEMAT	20-60 {44.0-52.4}	SEMI Prime, 1Flat 47.5mm, TTV<7µm, Thermal Oxide 0.80±0.08µm
9309	125	59.60	p-type Si:B	[100]	6"	635 ±15	OxP/POx	CEMAT	20-100 {40.7-56.9}	SEMI Prime, 1Flat (57.5mm), TTV<6μm, Thermal Oxide 0.50±0.05µm
A838	50	59.60	n-type Si:As	[100]	6"	675	OxP/EOx	CEMAT	<0.005	SEMI Prime, 1Flat 57.5mm, Thermal Oxide 3.5±0.5µm
ME0	50	104.00	p-type Si:B	[100]	6"	525 ±10	P/P	Siltro aro 2 wks	FZ 700-1,000	SEMI Prime, 1Flat (57.5mm), Empak cst
ME4	16	128.00	n-type Si:P	[100]	6"	500 ±10	P/P	Siltro aro 2 wks	FZ 5,000-12,000	SEMI Prime, 1 JEIDA Flat, Empak cst
ME4b	64	128.00	n-type Si:P	[100]	6"	400 ±10	P/P	MEMS aro 2 wks	FZ 5,000-12,000	SEMI Prime, 1 JEIDA Flat, Empak cst
ME5	175	106.00	n-type Si:P	[100]	6"	650 ±10	P/E	MEMS aro 7 wks	FZ >5,000	SEMI Prime, 1Flat (57.5mm), Empak cst
AE32b	300	32.60	p-type Si:B	[100]	6"	1,200	P/E	aro 7-8 wks	1-100	SEMI Prime, hard cst MINIMUM 300 WAFERS MINIMUM 300 WAFERS

5" Wafers

Note: Surface - P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that layer); Material - CZ unless noted
Note: Items sold in quantities of 25, unless noted

Item	Qty in Stock	Price $/unit	Material	Orient.	Diam (mm)	Thck (μm)	Surf.	Source	Resistivity Ωcm	Comment
B962	75	35.60	p-type Si:B	[100]	5"	525 ±15	P/E	Siltro	FZ 14-22	Prime, hard cst
E962	25	39.60	n-type Si:P	[111]	5"	300 ±15	P/E	Siltro	FZ 1,000-3,000	Prime, hard cst
9228	25	31.00	p-type Si:B	[100]	5"	525	P/EOx	CEMAT	0.002-0.004 {0.0031-0.0035}	SEMI Prime, 1Flat, Empak cst, TTV<5µm Back LTO 5,000±500 [A]
50e	100	6.00	p-type Si:B	[111-4°]	5"	625	P/EOx	Motrla H51/20A	5-25	SEMI Test, Soft cst
E763	20	12.00	p-type Si:B	[111-4°]	5"	625	P/EOx	Motrla H73B00	0.014-0.020	SEMI Test, Empak cst
H763	17	24.00	p-type Si:B	[111-4°]	5"	625	P/EOx	Motrla H73B00	0.014-0.020	SEMI Test, Empak cst 3 cassettes: 10 wafers, 7 wafers
6985	3750	8.00	n-type Si:As	[100]	5"	625	P/E	Crystc #6985	0.001-0.007	SEMI Test, Sealed in Empak {C2, C3, C8, C9, C13, C16, C20, C22, C44}
6991	1000	8.00	n-type Si:As	[100]	5"	625	P/E	Crystc #6991	0.001-0.007	SEMI Test, Sealed in Empak {C15, C19, C10.6}
B862	100	30.00	n-type Si:Sb	[111-3.0°] ±0.5°	5"	625	P/E	CEMAT	0.015-0.020 {0.0152-0.0185}	SEMI Prime, 2Flats, Empak cst
6988	150	6.00	n-type Si:As	[111-4°]	5"	700	E/E	Crystc	0.001-0.007	SEMI, Empak cst
7180	224	4.00	Si:?	[???]	5"	625	P/E	Crystc	?	Test, 1Flat, Empak cst
D925	244	39.60	n-type Si:As	[100]	5"	625	OxP/EOx	CEMAT / Crystc	0.001-0.007	SEMI Prime, 2Flats, Thermal Oxide 3.5±0.5µm, in Empak
ME7	70	52.00	p-type Si:B	[100]	5"	550	P/E	MEMS aro 2 wks	FZ 376-1,972	SEMI Prime, 2Flats, Empak cst
AF87b	100	104.00	p-type Si:B	[111] ±0.5°	5"	625	P/P	SPC aro 7-8 wks	FZ >10,000	SEMI Prime, 1Flat, in Empak, MINIMUM 100 WAFERS
ME6	100	52.00	n-type Si:P	[100]	5"	550	P/E	MEMS aro 2 wks	FZ 462-1,972	SEMI Prime, 1Flat (57.5mm), Empak cst

4" Wafers

Note: Surface - P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that layer); Material - CZ unless noted
Note: Items sold in quantities of 25, unless noted

Item	Qty in Stock	Price $/unit	Material	Orient.	Diam (mm)	Thck (μm)	Surf.	Source	Resistivity Ωcm	Comment
E135	25	48.60	p-type Si:B	[100]	4"	525	P/E	ITME due 8/24	FZ 600-1,200	SEMI
1109	1	520.00	n-type Si:P	[100]	4"	9,600	P/E	SPC	FZ 6,000-10,000	SEMI, 1Flat
9963	25	67.60	n-type Si:P	[100]	4"	400	P/P	ITME	FZ 6,000-10,000	SEMI Prime, 1Flat, Empak cst
B109	1	620.00	n-type Si:P	[100]	4"	11,700	P/E	SPC	FZ 6,000-10,000	SEMI, 1Flat
C109	25	67.60	n-type Si:P	[100]	4"	400	P/P	SPC due 8/05	FZ 6,000-10,000	SEMI Prime, 1 Flat, TTV<5µm
B963	18	96.00	n-type Si:P	[100]	4"	1,000	P/E	ITME	FZ 5,000-12,000	SEMI Prime, 1Flat cassettes of 8 & 10 wafers
C894	25	69.60	n-type Si:P	[100]	4"	500	P/P	SPC	FZ 5,000-10,000	SEMI Prime, 1 Flat, Empak cst
C963	6	106.00	n-type Si:P	[100]	4"	1,000	P/E	ITME	FZ 5,000-12,000	SEMI Prime, 1Flat
E774	46	49.60	n-type Si:P	[100]	4"	500	P/P	ITME	FZ >1,000 {1,720-2,120}	SEMI Prime, 2Flats, in Empak, MCC Lifetime>6,000µs
F774	22	65.60	n-type Si:P	[100]	4"	525	P/E	ITME	FZ >1,000 {1,720-2,120}	SEMI, 2Flats Lifetime>6ms 4 cssts: 5, 8 and 9 wafers (3 of 9 wafers minor scratches)
B278	50	44.80	n-type Si:P	[111] ±1°	4"	380	P/E	CEMAT	FZ 2,000-3,000 {2,085-2,624}	SEMI Prime, 1Flat, Epak cst, TTV<5µm; T>1,000µs
C311	13	55.60	n-type Si:P	[111] ±0.5°	4"	525	P/E	ITME	FZ 2,000-3,000	SEMI Prime, 1Flat, Empak cst
D681	4	94.60	n-type Si:P	[111]	4"	1,000	P/P	SPC	FZ 1,900-3,000	SEMI, 1Flat
E759	10	61.00	n-type Si:P	[111] ±0.5°	4"	800	P/E	SPC	FZ 1,600-2,200	SEMI, 1Flat, Empak cst
F759	70	53.00	n-type Si:P	[111] ±0.5°	4"	500	P/P	SPC	FZ 1,600-2,200	SEMI, 1Flat
D278	75	39.60	n-type Si:P	[111] ±1°	4"	380	P/E	CEMAT	FZ 1,000-2,000 {1,756-1,962}	SEMI Prime, 1Flat, Epak cst; T>1,000µs
E278	20	39.60	n-type Si:P	[111] ±1°	4"	380	P/E	CEMAT	FZ 1,000-2,000	SEMI Prime, 1Flat, Epak cst; T>1,000µs 3 cassettes: 10 wafers, 5 wafers, 5 wafers
B537	5	85.00	n-type Si:P	[111] ±0.5°	4"	1,000	P/P	ITME	FZ 200-600	SEMI Prime, 2Flats, Empak cst
F962	54	29.60	n-type Si:P	[111]	4"	370 ±5	L/L	Siltro	FZ 50-60	SEMI Prime, hard cst 5 cassettes: 25, 14, 5, 3, 2
G962	25	19.60	n-type Si:P	[111]	4"	240 ±10	E/E	Siltro	FZ 2.81-3.06	SEMI Prime, hard cst
B987	11	96.00	n-type Si:P	[112-5° towards[11-1]] ±0.5°	4"	795	E/E	SPC	FZ >100	SEMI, 1Flat, TTV<4µm
D780	4	98.00	n-type Si:P	[755]	4"	500	P/P	SPC	FZ 5,000-8,000	SEMI Prime, 1Flat, Empak cst
B092	72	79.60	Intrinsic Si:-	[100]	4"	400	P/E	SPC	FZ >20,000	SEMI Prime, 1Flat, Empak cst
C092	2	122.20	Intrinsic Si:-	[100]	4"	450	P/E	SPC	FZ >20,000	SEMI, 1Flat
G057	75	69.60	Intrinsic Si:-	[100]	4"	350	P/P	SPC	FZ >10,000	SEMI Prime, 1Flat, Empak cst
1046	17	99.60	Intrinsic Si:-	[111] ±0.25°	4"	300 ±15	P/P	ITME	FZ 30,000-50,000	SEMI Prime, T>2ms, 1Flat, in Empak {csts of 10, 7 wafers}
E842	25	69.60	Intrinsic Si:-	[111] ±0.5°	4"	525	P/E	ITME	FZ 26,000-40,000	SEMI Prime, 1 Flat, Empak cst
B923	16	98.60	Intrinsic Si:-	[111] ±0.5°	4"	525	P/E	ITME	FZ 20,000-40,000	SEMI, 1Flat
C941	24	69.60	Intrinsic Si:-	[111] ±0.5°	4"	525	P/E	SPC	FZ >20,000	SEMI, 1Flat, Empak cst, TTV<6µm
D046	35	89.60	Intrinsic Si:-	[111] ±0.25°	4"	300 ±15	P/P	ITME	FZ 20,000-30,000	SEMI Prime, T>2ms, 1Flat, in Empak {csts of 10, 10, 10, 5 wafers}
D941	50	72.60	Intrinsic Si:-	[111] ±0.5°	4"	500	P/P	SPC	FZ >20,000	SEMI Prime, 1Flat
E941	20	98.60	Intrinsic Si:-	[111] ±0.5°	4"	525	P/E	SemPro	FZ >20,000	SEMI, 1Flat, Empak cst, TTV<6µm 3 cassettes: 10 wafers, 5 wafers, 5 wafers
C792	4	194.80	Intrinsic Si:-	[111] ±0.23°	4"	460 ±15	P/P	SPC	FZ 13,000-20,000	SEMI Prime, 1Flat, Individual cst, no minimum
C783	15	98.00	Intrinsic Si:-	[111] ±0.5°	4"	625	P/E	SPC	FZ >10,000	SEMI Prime, 1 Flat, Empak cst
E923	12	89.60	Intrinsic Si:-	[111] ±0.5°	4"	525	P/E	ITME	FZ 10,000-15,000	SEMI Prime, 1Flat
D573	100	31.60	p-type Si:B	[110] ±0.2°	4"	500	P/P	CEMAT	5-10 {5.7-7.8}	SEMI Prime, Epak cst, Flats: Primary @ [111], Secondary @ 109.5º CW
E573	425	29.60	p-type Si:B	[110] ±0.2°	4"	525	P/E	CEMAT	5-10 {5.8-8.6}	SEMI Prime, Epak cst, Flats: Primary @ [111], Secondary @ 109.5º CW
E925	75	12.40	p-type Si:B	[100]	4"	525	P/E	Prolog	10-20	SEMI Prime, 2Flats, Empak cst
F808	50	19.60	p-type Si:B	[100]	4"	500	P/P	Prolog	10-20	SEMI Prime, 2Flats, Empak cst
G808	15	45.60	p-type Si:B	[100]	4"	1,000	P/P	Prolog	10-20	SEMI Prime, 2Flats, Empak cst 3 cassettes 2 wafers, 5 wafers, 8 wafers
H808	12	35.60	p-type Si:B	[100]	4"	1,000	P/P	Prolog	10-20	SEMI Prime, 2Flats, Empak cst
I808	5	39.60	p-type Si:B	[100]	4"	500	P/P	Prolog	10-20	SEMI Prime, 2Flats, Empak cst
D440	175	10.80	p-type Si:B	[100] ±1°	4"	460	P/E	Prolog	9.6-14.4	SEMI Prime, 2Flats, hard cst
D297	25	34.60	p-type Si:B	[100]	4"	1,000	P/P	ITME	8-12	SEMI Prime, 2Flats, Empak cst
9776	125	19.60	p-type Si:B	[100]	4"	525	P/P	Prolog	6.0-8.5	SEMI Prime, 2Flats, TTV<8µm, Bow/Warp<30µm
B093	50	38.80	p-type Si:B	[100]	4"	1,000	P/E	ITME	6-12 {5-10}	SEMI Prime, 1Flat, Empak cst
1009	25	10.80	p-type Si:B	[100]	4"	380	P/E	Prolog	5-10	SEMI Prime, 1Flat
1058	150	10.80	p-type Si:B	[100]	4"	380	P/E	Prolog	5-10	SEMI Prime, 1Flat
9959	825	12.20	p-type Si:B	[100]	4"	525	P/E	Prolog	5-10	SEMI Prime, 1Flat
C535	19	33.60	p-type Si:B	[100]	4"	1,000	P/E	Prolog	5-10	SEMI Prime, 1Flat 2 cassettes: 9 wafers, 10 wafers
G984	175	23.60	p-type Si:B	[100]	4"	1,000	P/E	Prolog	5-10	SEMI Prime, 1Flat
1147	25	23.60	p-type Si:B	[100]	4"	380	P/P	ITME due 8/13	5-25	SEMI Prime, 2Flats, Empak cst
1164	1500	10.80	p-type Si:B	[100]	4"	380	P/E	Prolog due 8/24	5-10	SEMI Prime, 1Flat
1165	100	24.80	p-type Si:B	[100]	4"	300	P/P	ITME due 8/03	3-10	SEMI Prime, 2Flats
B155	20	42.00	p-type Si:B	[100]	4"	1,500	P/P	ITME due 8/19	1-20	SEMI, NO Flats
1167	25	36.80	p-type Si:B	[100]	4"	200	P/P	ITME due 9/15	1-100	SEMI
9458	100	15.60	p-type Si:B	[100]	4"	380	P/E	CEMAT	0.5-1.0 {0.79-0.90}	SEMI Prime, 2Flats, TTV<5µm, in Epak
B458	449	16.80	p-type Si:B	[100]	4"	525	P/E	CEMAT	0.5-1.0 {0.68-0.81}	SEMI Prime, 2Flats, Empak cst, TTV<6µm
C458	15	25.60	p-type Si:B	[100]	4"	380	P/E	CEMAT	0.5-1.0	SEMI Prime, 2Flats, TTV<5µm, in Epak
1106	25	23.60	p-type Si:B	[100]	4"	300	P/E	ITME due 8/05	0.085-0.095	SEMI Prime, 2Flats {Secondary 45° from Primary}, Empak cst
9928	96	19.60	p-type Si:B	[100]	4"	525	P/E	ITME	0.01-0.02 {0.017-0.020}	SEMI Prime, 2Flats, Empak cst
9961	650	18.80	p-type Si:B	[100]	4"	525	P/E	CEMAT	0.01-0.02	SEMI Prime, 2Flats, TTV<7µm, Warp<20µm, Bow<10µm
C936	25	19.60	p-type Si:B	[100]	4"	525	P/E	CEMAT	0.01-0.02 {0.0126-0.0151}	SEMI Prime, 2Flats, Empak cst, TTV<4µm, Bow <10µm
1031	250	25.60	p-type Si:B	[100]	4"	525	P/E	CEMAT	0.001-0.002	SEMI Prime, 2Flats, TTV<4µm, Bow<10µm, Warp<25µm.
1114	50	18.00	p-type Si:B	[100]	4"	525	P/E	Prolog	0.001-0.005	SEMI Prime, 2Flats, wafers might show dopant rings
1107	100	19.20	p-type Si:B	[100]	4"	525	P/E	ITME due 8/02	0.001-0.005	SEMI Prime, 2Flats
5722	425	12.80	p-type Si:B	[111-4°] ±0.5°	4"	525	P/E	ITME	10-20 {11.4-19.1}	SEMI Test, 1Flat, Empak cst
D157	75	16.40	p-type Si:B	[111] ±0.5°	4"	300	P/E	ITME due 8/05	0.060-0.073	SEMI Prime, 1Flat, hard cst
1044	1	20.00	p-type Si:B	[111] ±0.5°	4"	340	P/E	ITME	0.02-0.05	SEMI, 1Flat Wafer dirty and with scratches
C228	50	19.00	p-type Si:B	[111-4°] ±0.5°	4"	525 ±15	P/EOx	CEMAT	0.005-0.015 {0.0086-0.0135}	SEMI Prime, 1Flat, Empak cst, TTV<5µm
B118	23	29.60	p-type Si:B	[111-3°] ±0.5°	4"	525	P/E	ITME	0.002-0.016	SEMI Prime, 1Flat, Empak cst
D378	100	31.60	n-type Si:P	[110] ±0.2°	4"	500	P/P	CEMAT	3-10 {6.9-8.5}	SEMI Prime, Epak cst, Flats: Primary @ [111], Secondary @ 70.5º CW
E378	225	28.80	n-type Si:P	[110] ±0.2°	4"	525	P/E	CEMAT	3-10 {3.6-6.0}	SEMI Prime, Epak cst, Flats: Primary @ [111], Secondary @ 70.5º CW
F378	75	25.60	n-type Si:P	[110] ±0.2°	4"	550 ±10	E/E	CEMAT	3-10 {3.5-4.1}	SEMI Prime, Epak cst, Flats: Primary @ [111], Secondary @ 70.5º CW, TTV<4µm
G378	15	29.60	n-type Si:P	[110] ±0.2°	4"	550 ±10	E/E	CEMAT	3-10	SEMI Prime, Epak cst, Flats: 1st @ [111], 2nd @ 70.5º CW, TTV<4µm, 2 cassettes: 5 wafers, 10 wafers
1093	25	23.60	n-type Si:P	[100]	4"	200	P/E	ITME	5-10	SEMI Prime, 1Flat, Empak cst
B825	75	16.80	n-type Si:P	[100]	4"	525	P/E	CEMAT	3-9 {3.6-5.9}	SEMI Prime, 1Flat, Empak cst, TTV<5µm, Warp<35µm
C925	250	19.60	n-type Si:P	[100]	4"	500 ±10	P/P	Prolog	2-5	SEMI Prime, 2Flats
9846	50	33.60	n-type Si:P	[100]	4"	1,000	P/P	ITME	1-20 {9.6-12.0}	SEMI, 2Flats
1119	175	18.80	n-type Si:P	[100]	4"	450	P/E	Prolog due 8/06	0.3-0.5	SEMI
9823	13	89.60	n-type Si:P	[100-4° towards[001]] ±0.5°	4"	8,000	P/E	ITME	0.05-0.15	SEMI, 1Flat
D823	12	89.60	n-type Si:P	[100-4° towards[011]] ±0.5°	4"	8,000	P/E	ITME	0.05-0.15	SEMI, 1Flat
E823	12	94.60	n-type Si:P	[100-6° towards[001]] ±0.5°	4"	8,000	P/E	ITME	0.05-0.15	SEMI, 1Flat
F823	10	94.60	n-type Si:P	[100-6° towards[011]] ±0.5°	4"	8,000	P/E	ITME	0.05-0.15	SEMI, 1Flat
K823	2	59.60	n-type Si:P	[100-10° towards[011]] ±0.5°	4"	3,000	P/E	ITME	0.05-0.15	SEMI, 1Flat
L823	7	89.60	n-type Si:P	[100-4° towards[001]] ±0.5°	4"	8,000	P/E	ITME	0.05-0.15	SEMI, 1Flat
F074	275	16.80	n-type Si:Sb	[100]	4"	525	P/E	CEMAT	0.010-0.020 {0.016-0.019}	SEMI Prime, 2Flats, Empak cst, TTV<5µm
I074	8	36.80	n-type Si:Sb	[100]	4"	525	P/E	CEMAT	0.01-0.02	SEMI Prime, 2Flats, Empak cst, TTV<5µm 3 cassettes: 5, 3, 2 wafers
9837	44	27.80	n-type Si:As	[100] ±0.15°	4"	400	P/P	SPC	0.001-0.005 {0.0028-0.0037}	SEMI Prime, 2Flats, TTV<5µm; 2 cassettes {25+19=44 wafers}
9948	275	18.80	n-type Si:As	[100]	4"	525	P/E	CEMAT	0.001-0.005	SEMI Prime, 2Flats, Empak cst, TTV<5µm
D837	43	27.80	n-type Si:As	[100] ±0.25°	4"	500	P/P	SPC	0.001-0.005	SEMI Prime, 2Flats, TTV<5µm
9146	575	5.00	n-type Si:P	[100]	4"	525	L/L	Radix	<1	Unpolished, 2Flats, coin roll
G960	8	90.00	n-type Si:P	[111] ±0.5°	4"	5,000	P/E	ITME	20-40	SEMI Prime, 2Flats
1070	25	25.60	n-type Si:P	[111-4°] ±0.5°	4"	525	P/E	ITME	1-2	SEMI Prime, 2Flats, Empak cst
B070	3	79.60	n-type Si:P	[111-4°] ±0.5°	4"	525	P/E	ITME	1-2	SEMI Prime, 2Flats, Empak cst
B798	75	16.00	n-type Si:P	[111-4.0°] ±0.5°	4"	460	P/E	Prolog	0.375-0.625	SEMI Prime, 2Flats, hard cst
B530	50	18.00	n-type Si:P	[111-3°] ±0.5°	4"	525	P/E	CEMAT	0.2-2.0 {0.84-0.99}	SEMI Prime, 2Flats, Empak cst, TTV<5µm
C530	45	18.00	n-type Si:P	[111-3°] ±0.5°	4"	525	P/E	CEMAT	0.2-2.0 {0.78-0.79}	SEMI Prime, 2Flats, Empak cst
8999	25	18.00	n-type Si:Sb	[111-3.0°] ±0.5°	4"	525	P/E	CEMAT	0.037-0.041 {0.0392-0.0406}	SEMI Prime, 2Flats, Empak cst, TTV<5.5µm
1069	50	15.20	n-type Si:Sb	[111-4°] ±0.5°	4"	525	P/E	ITME	0.019-0.021	SEMI Prime, 2Flats, hard cst
5723	75	12.80	n-type Si:Sb	[111-4°] ±0.5°	4"	525	P/E	ITME	0.008-0.020	SEMI Test, 2Flats, Empak cst (Prime but old wafers)
9544	150	18.00	n-type Si:Sb	[111-4°] ±0.5°	4"	420	P/EOx	CEMAT	0.008-0.018 {0.0138-0.0151}	TTV<2µm, SEMI Prime, 2Flats, HBSD+LTO seal, Epi edges, Empak cst
9664	175	14.80	n-type Si:Sb	[111-3°] ±0.5°	4"	400	P/E	ITME	0.008-0.018	SEMI Prime, 1Flat
B405	25	14.80	n-type Si:Sb	[111-4°] ±0.5°	4"	525	P/E	Montco / ITME#5723	0.008-0.020 {0.016-0.019}	SEMI Prime, 2Flats, Empak cst, TTV<6.7µm
F544	10	22.00	n-type Si:Sb	[111-4°] ±0.5°	4"	420	P/EOx	CEMAT	0.008-0.018 {0.0141-0.0149}	SEMI Prime, 2Flats, HBSD+LTO seal, Epi edges, Empak cst, TTV<2µm
9239	200	19.60	n-type Si:As	[111-2°] ±0.5°	4"	400	P/EOx	CEMAT	0.001-0.004 {0.0018-0.0036}	SEMI Prime, 1Flat, Epi edges, 0.5µm LTO, Empak cst
9934	23	19.60	p-type Si:B	[100]	4"	380	OxP/EOx	SPC	5-10	SEMI, 2Flats, Empak cst, 2.2±0.2µm Thermal Oxide
F176	15	46.80	n-type Si:As	[111-4°]	4"	525	OxP/E	Proces	0.001-0.005	SEMI Prime, 2Flats, Empak cst; 0.15±0.05um Thermal Oxide (front side only)
AF87c	100	62.40	p-type Si:B	[111] ±0.5°	4"	525	P/P	aro 7-8 wks	FZ >10,000	SEMI, 1Flat MINIMUM 100 WAFERS
AE57d	6	506.80	n-type Si:P	[100]	4"	11,700	P/E	aro 7-8 wks	FZ 6,000-10,000	SEMI
ME8	325	40.00	n-type Si:P	[111]	4"	355 ±15	P/P	MEMS aro 2 wks	FZ 1,000-2,000	SEMI Prime, 1Flat (57.5mm), Empak cst
14I	24	34.40	n-type Si:P	[111] ±0.5º°	4"	460	P/E	ITME aro 3 wks	FZ 135-150	SEMI Prime, 2Flats, Empak cst
AG39b	25	94.00	Intrinsic Si:-	[100]	4"	400	P/E	aro 9-10 wks	FZ >20,000	SEMI, 1Flat, TTV<4µm
20N	9	60.40	p-type Si:B	[100]	4"	3,000	P/E	ITME aro 3 wks	20-25	SEMI Prime, 1Flat, Individual cst
AH27	25	23.20	p-type Si:B	[100]	4"	525	P/P	aro 9 wks	>20	SEMI
AF18b	300	17.40	p-type Si:B	[100]	4"	525 ±15	P/P	aro 10-1 wks	15-25	SEMI Prime, 2Flats, TTV<5µm MINIMUM 300 WAFERS
AF18c	300	21.60	p-type Si:B	[100]	4"	400 ±15	P/P	aro 5 wks	15-25	SEMI Prime, 2Flats, TTV<5µm MINIMUM 300 WAFERS
AG36b	125	17.80	p-type Si:B	[100]	4"	525	P/P	aro 8-9 wks	10-15	SEMI MINIMUM 125 WAFERS
AH66	100	49.40	p-type Si:B	[100]	4"	6,000	P/E	aro 6-7 wks	10-20	SEMI MINIMUM 100 WAFERS
15H	45	19.20	p-type Si:B	[100]	4"	480	P/E	ITME aro 3 wks	8-12	SEMI Prime, 2Flats {Secondary 45° from Primary}, Empak cst
15Q	50	44.00	p-type Si:B	[100-6°] ±0.5°	4"	300	P/E	ITME aro 3 wks	8-12	SEMI Prime, 2Flats, Empak cst
16O	6	47.80	p-type Si:B	[100]	4"	900	P/P	ITME aro 3 wks	8-12	SEMI Prime, 2Flats, Empak cst
20C	8	54.80	p-type Si:B	[100]	4"	2,300	P/P	ITME aro 3 wks	8-10	SEMI Prime, 1Flat, Individual cst
20D	37	28.00	p-type Si:B	[100]	4"	1,200	P/P	ITME aro 3 wks	8-12	SEMI Prime, 2Flats, Individual cst
20E	20	58.00	p-type Si:B	[100]	4"	3,175	P/P	ITME aro 3 wks	7-10	SEMI Prime, 2Flats, Individual cst
20G	35	36.80	p-type Si:B	[100]	4"	1,270	P/P	ITME aro 3 wks	7-8	SEMI Prime, 1Flat
15T	66	38.80	p-type Si:B	[100]	4"	1,000	P/E	ITME aro 3 wks	6-12	SEMI Prime, 1Flat, Empak cst
16F	50	28.80	p-type Si:B	[100]	4"	380	P/E	ITME aro 3 wks	6-10	SEMI Prime, 2Flats, Empak cst
15G	125	18.80	p-type Si:B	[100]	4"	450	P/E	ITME aro 3 wks	5-10	SEMI Prime, 2Flats, Empak cst
15K	8	37.00	p-type Si:B	[100]	4"	525	P/E	ITME aro 3 wks	5-15	SEMI Prime, 2Flats, Empak cst
15P	40	20.80	p-type Si:B	[100]	4"	525	P/E	ITME aro 3 wks	5-7	SEMI Prime, 2Flats, Empak cst
16B	7	40.60	p-type Si:B	[100]	4"	200	P/E	ITME aro 3 wks	5-10	SEMI, 1Flat, Empak cst
20A	3	82.80	p-type Si:B	[100]	4"	3,000	P/E	ITME aro 3 wks	1-20	SEMI Prime, 2Flats, Individual cst
20B	28	52.80	p-type Si:B	[100]	4"	3,000	P/E	ITME aro 3 wks	1-30	SEMI Prime, 2Flats, Individual cst
20P	2	98.00	p-type Si:B	[100]	4"	2,900	P/P	ITME aro 3 wks	1-20	SEMI Prime, 2Flats, Individual cst
20R	16	56.80	p-type Si:B	[100]	4"	3,150	P/P	ITME aro 3 wks	1-10	SEMI, 2Flats
AF69b	250	10.50	p-type Si:B	[100]	4"	525	P/E	aro 9 wks	1-10	SEMI Test, 1Flat MINIMUM 250 WAFERS
AG50	25	58.60	p-type Si:B	[100]	4"	150	P/P	aro 9 wks	1-100	SEMI
15U	75	18.40	p-type Si:B	[100]	4"	300	P/E	ITME aro 3 wks	0.085-0.095	SEMI Prime, 2Flats {Secondary 45° from Primary}, Empak cst
16E	70	19.60	p-type Si:B	[100]	4"	400	P/P	ITME aro 3 wks	0.010-0.035	SEMI Prime, 2Flats, Empak cst
16C	50	23.60	p-type Si:B	[100]	4"	525	P/E	ITME aro 3 wks	0.002-0.005	SEMI Prime, 2Flats, Empak cst
AF82	100	23.80	p-type Si:B	[100]	4"	325	P/P	aro 9 wks	0.002-0.004	SEMI, 1Flat MINIMUM 100 WAFERS
AE98	100	21.80	p-type Si:B	[100]	4"	525	P/E	aro 8 wks	0.001-0.005	SEMI Prime, 2Flats MINIMUM 100 WAFERS
AF56	50	35.60	p-type Si:B	[100]	4"	1,000	P/E	aro 9 wks	0.001-0.005	SEMI Prime, 2Flats MINIMUM 50 WAFERS
AF82b	100	23.80	p-type Si:B	[100]	4"	325	P/P	aro 9 wks	0.001-0.005	SEMI, 1Flat MINIMUM 100 WAFERS
AH17	100	23.80	p-type Si:B	[100]	4"	280	P/E	aro 9 wks	0.001-0.010	SEMI MINIMUM 100 WAFERS
S30	5	53.60	p-type Si:B	[100]	4"	1,000	P/E	aro 5 wks	0.001-0.005	1Flat
16J	19	43.80	p-type Si:B	[100]	4"	1,000	P/E	ITME aro 3 wks	<0.020	SEMI Prime, 2Flats, Empak cst
AH45b	50	24.00	p-type Si:B	[111] ±0.5°	4"	525	P/P	aro 9 wks	20-50	SEMI MINIMUM 50 WAFERS
13H	25	22.00	p-type Si:B	[111-4°] ±0.5°	4"	500	P/P	ITME aro 3 wks	6-10	SEMI Prime, 1Flat, Empak cst
AF26	25	29.20	p-type Si:B	[111-6°] ±0.5°	4"	525	P/E	aro 9 wks	1-100	SEMI
16U	100	16.40	p-type Si:B	[111] ±0.5°	4"	300	P/E	ITME aro 4 wks	0.060-0.073	SEMI Prime, 1Flat, hard cst, Discount on 100 or more
13P	50	20.00	p-type Si:B	[111-3°] ±0.5°	4"	525	P/E	ITME aro 3 wks	0.002-0.016	SEMI Prime, 2Flats, Empak cst
20L	20	109.60	n-type Si:P	[100]	4"	5,000	P/E	ITME aro 3 wks	>20	40x80mm rectangle pieces
20V	6	52.80	n-type Si:P	[100]	4"	1,450	P/E	ITME aro 3 wks	15-20	SEMI, 1Flat
AG84	15	30.00	n-type Si:P	[100]	4"	525	P/P	aro 7 wks	15-30	SEMI Prime, 2Flats
20H	2	83.60	n-type Si:P	[100]	4"	2,800	P/E	ITME aro 3 wks	>10	SEMI Prime, 1Flat, Individual cst
20T	19	42.80	n-type Si:P	[100]	4"	1,500	P/E	ITME aro 3 wks	10-100	SEMI, 2Flats
AH25f	500	15.40	n-type Si:P	[100]	4"	508	P/E	aro 6-7 wks	10-40	SEMI, 1Flat MINIMUM 500 WAFERS
16H	75	20.80	n-type Si:P	[100]	4"	450	P/P	ITME aro 3 wks	6-14	SEMI Prime, 2Flats, Empak cst
20K	3	98.40	n-type Si:P	[100]	4"	6,000	P/P	ITME aro 3 wks	5-6	SEMI Prime, 2Flats, Individual cst
15R	20	24.80	n-type Si:P	[100]	4"	525	P/E	ITME aro 3 wks	1-20	SEMI Prime, 2Flats, Empak cst
20O	6	76.80	n-type Si:P	[100]	4"	6,000	P/E	ITME aro 3 wks	1-10	SEMI Prime, 2Flats, Individual cst
AG68	325	19.85	n-type Si:Sb	[100]	4"	375	P/E	aro 9-10 wks	0.010-0.025	SEMI, 2Flats MINIMUM 325 WAFERS
16M	50	23.60	n-type Si:As	[100]	4"	450	P/E	ITME aro 3 wks	0.001-0.006	SEMI Prime, 2Flats, hard cst
20M	7	79.20	n-type Si:P	[111] ±0.5°	4"	6,000	P/P	ITME aro 3 wks	1-20	SEMI Prime, 2Flats, Individual cst
AG13c	500	14.00	n-type Si:P	[111] ±0.5°	4"	525	P/E	aro 9 wks	1-20	SEMI MINIMUM 500 WAFERS
16W	60	19.00	n-type Si:Sb	[111-4°] ±0.5°	4"	525	P/E	ITME aro 4 wks	0.030-0.037	SEMI Prime, 2Flats
13I	100	19.20	n-type Si:Sb	[111-4°] ±0.5°	4"	480	P/E	ITME aro 3 wks	0.025-0.045	SEMI Prime, 2Flats, Empak cst
15A	250	15.20	n-type Si:Sb	[111-4°] ±0.5°	4"	450	P/E	ITME aro 4 wks	0.020-0.028	SEMI Prime, 2Flats, Empak cst
16Q	25	18.40	n-type Si:Sb	[111-4°] ±0.5°	4"	525	P/E	ITME aro 4 wks	0.019-0.021	SEMI Prime, 2Flats, hard cst
14L	100	19.60	n-type Si:Sb	[111-3°] ±0.5°	4"	525	P/E	ITME aro 4 wks	0.017-0.020	SEMI Prime, 2Flats, Empak cst
13R	50	20.00	n-type Si:Sb	[111-4°] ±0.5°	4"	525	P/E	ITME aro 3 wks	0.015-0.017	SEMI Prime, 2Flats, Empak cst
14M	150	21.00	n-type Si:Sb	[111-3°] ±0.5°	4"	525	P/E	ITME aro 4 wks	0.015-0.019	SEMI Prime, 2Flats, Empak cst
14F	8	30.80	n-type Si:Sb	[111] ±0.5°	4"	525	P/E	ITME aro 3 wks	0.012-0.019	SEMI Prime, 2Flats, Empak cst
13E	40	20.80	n-type Si:Sb	[111-4°] ±0.5°	4"	525	P/E	ITME aro 3 wks	0.010-0.020	SEMI Prime, 2Flats, Empak cst
14A	50	20.00	n-type Si:Sb	[111-3°] ±0.5°	4"	525	P/E	ITME aro 3 wks	0.008-0.020	SEMI Prime, 2Flats, Empak cst
14B	200	14.80	n-type Si:Sb	[111-3°] ±0.5°	4"	380	P/E	ITME aro 3 wks	0.008-0.018	SEMI Prime, 1Flat, Empak cst
14O	200	18.80	n-type Si:Sb	[111-3°] ±0.5°	4"	400	P/E	ITME aro 3 wks	0.008-0.018	SEMI Prime, 1Flat
16R	975	14.80	n-type Si:Sb	[111-3°] ±0.5°	4"	400	P/E	ITME aro 4 wks	0.008-0.018	SEMI Prime, 1Flat, hard cst, Discount on 100 or more
16S	150	12.80	n-type Si:Sb	[111-3°] ±0.5°	4"	525	P/E	ITME aro 4 wks	0.008-0.018	SEMI Prime, 1Flats, hard cst, Discount on 100 or more
16V	150	14.80	n-type Si:Sb	[111-2°] ±0.5°	4"	400	P/E	ITME aro 4 wks	0.008-0.018	SEMI Prime, 1Flat, hard cst
16X	75	19.80	n-type Si:Sb	[111-3°] ±0.5°	4"	525	P/E	ITME aro 4 wks	0.006-0.020	SEMI Prime, 2Flats
13X	50	20.00	n-type Si:Sb	[111-3°] ±0.5°	4"	425	P/E	ITME aro 3 wks	0.005-0.020	SEMI Prime, 2Flats, Empak cst
14G	50	20.00	n-type Si:Sb	[111-3°] ±0.5°	4"	450	P/E	ITME aro 3 wks	0.005-0.020	SEMI Prime, 2Flats, Empak cst
16T	150	12.80	n-type Si:Sb	[111-3°] ±0.5°	4"	525	P/E	ITME aro 4 wks	0.005-0.018	SEMI Prime,1Flat, hard cst, Discount on 100 or more
ST00	120	13.20	n-type Si:Sb	[111-4.0°] ±0.5°	4"	525	P/EOx	SiT Aro 1 week	0.005-0.020	SEMI Test, 2Flats, Back-side LTO seal (0.35µm), in 24 wafer Empak csts (Prime but old wafers), Flatness<5µm
13T	25	25.60	n-type Si:As	[111-3°] ±0.5°	4"	525	P/E	ITME aro 3 wks	0.001-0.005	SEMI Prime, 2Flats, Empak cst
13U	100	23.60	n-type Si:As	[111-4°] ±0.5°	4"	500	P/E	ITME aro 3 wks	0.001-0.005	SEMI, 2Flats, Empak cst
13V	50	24.80	n-type Si:As	[111-3°] ±0.5°	4"	400	P/E	ITME aro 3 wks	0.001-0.005	SEMI Prime, 1Flat, Empak cst
AG62	25	43.20	n-type Si:Sb	[111] ±0.15°	4"	1,000	P/E	aro 9 wks	<0.025	SEMI
ST01	20	24.40	p-type Si:B	[100]	4"	525	OxP/EOx	Crystc aro 1 wk	1-100	SEMI, 2Flats, Empak cst, 2,850±5% Thermal Oxide
ST02	25	23.20	n-type Si:Sb	[111]	4"	525	OxP/EOx	Crystc aro 1 wk	0.005-0.020	SEMI, 2Flats, Empak cst, 3,100±5% Thermal Oxide

3" Wafers

Note: Surface - P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that layer); Material - CZ unless noted
Note: Items sold in quantities of 25, unless noted

Item	Qty in Stock	Price $/unit	Material	Orient.	Diam (mm)	Thck (μm)	Surf.	Source	Resistivity Ωcm	Comment
B898	25	64.60	p-type Si:B	[111] ±0.5°	3"	500	P/P	SPC	FZ >9,000	SEMI, 1Flat
C898	11	49.60	p-type Si:B	[111] ±0.5°	3"	625	P/E	SemPro	FZ >9,000	SEMI, 1Flat TTV<25µm
9783	18	69.60	p-type Si:B	[111] ±0.5°	3"	625	P/E	SPC	FZ >5,000	SEMI, 1Flat, Empak cst
D206	150	64.80	n-type Si:P	[211]	3"	475	P/P	ITME	FZ NTD 50-60 {53-58}	SEMI Prime, 2Flats
C880	117	44.60	n-type Si:P	[111]	3"	380 ±15	P/P	SPC	FZ 5,000-10,000	SEMI, 1Flat
1073	10	66.60	Intrinsic Si:-	[100]	3"	1,000	P/P	ITME	FZ >10,000 {10,000-15,000}	SEMI, 1Flat
C073	2	116.60	Intrinsic Si:-	[100]	3"	1,000	P/P	ITME	FZ 10,000-15,000	SEMI, 1Flat
C105	25	35.80	Intrinsic Si:-	[100]	3"	380	P/E	ITME	FZ 5,000-7,000	SEMI
E105	6	35.80	Intrinsic Si:-	[100]	3"	380	P/E	ITME	FZ 5,000-7,000	SEMI
C897	14	71.60	Intrinsic Si:-	[112]	3"	380	P/P	SPC	FZ >5,000	SEMI, 1Flat
C696	5	54.60	n-type Si:P	[100]	3"	380	OxP/EOx	SPC	FZ 3,000-6,000	SEMI Prime, 1Flat 20,000 A Oxide on both sides
6552	50	16.80	p-type Si:B	[110] ±0.5°	3"	435	E/E	ITME	2.55-3.05	SEMI 2 Flats @ [111]
B014	15	29.60	p-type Si:B	[110]	3"	380	P/E	CEMAT	2-4 {2.4-2.9}	SEMI Prime, 2Flats, Empak cst 2 cassette: 5 wafers, 10 wafers
B173	225	24.00	p-type Si:B	[110]	3"	381	P/E	CEMAT	0.085-0.115 {0.102-0.106}	SEMI Prime, 2Flats, Empak cst
E076	16	29.00	p-type Si:B	[100]	3"	525	P/E	ITME	10-20 {18-19}	SEMI Prime, 2Flats
E609	70	9.80	p-type Si:B	[100]	3"	380	P/E	Prolog	10-20	SEMI Prime, 2Flats, hard cst
G609	100	14.60	p-type Si:B	[100]	3"	500	P/P	Prolog	10-20	SEMI Prime, 2Flats, hard cst
H609	225	19.60	p-type Si:B	[100]	3"	1,000	P/P	Prolog	10-20	SEMI Prime, 2Flats, hard cst
9849	275	9.60	p-type Si:B	[100]	3"	380	P/E	Prolog	5-10	SEMI, 2Flats
D006	25	19.60	p-type Si:B	[100]	3"	200	P/P	ITME due 7/31	4-8 {5.0-5.8}	SEMI, 2Flats
C873	4	94.00	p-type Si:B	[100]	3"	3,000	P/P	ITME	1-100 {13.9-14.9}	SEMI, 2Flats 2 groups of 2 wafers each
1169	75	11.40	p-type Si:B	[100]	3"	1,000	P/E	Prolog due 8/05	1-20	SEMI Prime, 2Flats
7099	75	19.60	p-type Si:Ga	[100]	3"	381	P/E	ITME	0.60-0.83	SEMI Prime, GALLIUM doped
B626	175	14.40	p-type Si:B	[100]	3"	380	P/E	ITME	0.001-0.005 {0.0026-0.0031}	SEMI Prime, 2Flats, Empak cst
C439	25	18.80	p-type Si:B	[111] ±0.5°	3"	800	P/P	ITME	15-30 {19-21}	SEMI Prime, 1Flat, Empak cst
9203	15	19.60	p-type Si:B	[111] ±0.5°	3"	280	P/E	ITME	8-10	Prime, NO Flats, Empak cst 2 cassette: 5 wafers, 10 wafers
9916	25	24.00	p-type Si:B	[111] ±0.5°	3"	350	P/P	ITME	0.01-0.03 {0.015-0.015}	SEMI Prime, 1Flat
H120	15	19.60	p-type Si:B	[111-4°] ±0.5°	3"	381	P/EOx	CEMAT	0.01-0.02 {0.0145-0.0148}	SEMI Prime, 1Flat, Epi edges, back-side LTO, Empak cst 2 cassette: 5 wafers, 10 wafers
9848	25	18.80	p-type Si:B	[111-3.5°]	3"	380	P/E	ITME	0.004-0.005	SEMI Prime, 1Flat, Empak cst
1071	75	13.60	p-type Si:B	[111-3°] ±1°	3"	380	P/E	Rectic	0.0006-0.0010	SEMI Test, 1Flat, Soft cst
9686	25	25.60	n-type Si:P	[510]	3"	1,000	P/E	ITME	5-10	NO Flats
F686	15	25.60	n-type Si:P	[510]	3"	1,000	P/E	ITME	5-10	NO Flats 3 cassettes: 6 wafers, 5 wafers, 4 wafers
B788	75	39.60	n-type Si:As	[110] ±0.5°	3"	420	P/P	SPC	0.001-0.007	SEMI Prime, Empak cst
9798	25	9.60	n-type Si:P	[100]	3"	375	P/E	Prolog	16-24	SEMI Prime, 1Flat, hard cst
C619	275	12.80	n-type Si:P	[100]	3"	380	P/E	CEMAT	10-15 {10.10-12.21}	SEMI Prime, 2Flats, Empak cst, TTV<3µm
9070	150	16.80	n-type Si:P	[100]	3"	300	P/P	CEMAT	1-100 {1.3-15.5}	SEMI Prime, 2Flats, Empak cst, TTV<5µm
9819	25	13.20	n-type Si:P	[100]	3"	380	P/P	ITME	1-10 {3-8}	SEMI Prime, 2Flats, Empak cst
1099	475	9.80	n-type Si:Sb	[100]	3"	375	P/E	Prolog due 8/20	0.008-0.020	SEMI
1036	550	15.40	n-type Si:As	[100]	3"	380	P/E	CEMAT	0.001-0.005 {0.0034-0.0041}	SEMI Prime, 2Flats, Epak cst, TTV<4µm, Bow< 10µm, Warp <20µm
D917	50	12.00	n-type Si:P	[111-3.0°] ±1°	3"	381	P/E	CEMAT	1-20 {1.7-5.7}	SEMI Test, 2Flats, Empak cst
B021	8	16.80	n-type Si:Sb	[111-4°] ±0.5°	3"	380	P/E	ITME	0.010-0.026	SEMI Prime, 2Flats, Empak cst
9199	194	12.80	n-type Si:As	[111-0.5°] ±0.5°	3"	380	P/E	CEMAT	0.001-0.004 {0.0029-0.0033}	SEMI Prime, 2Flats, hard cst
9571	225	14.80	n-type Si:P	[100]	3"	381	OxP/EOx	CEMAT	1-10 {3.3-4.7}	SEMI Prime, 1Flat, with Thermal Oxide 0.30um±5% thick, Empak cst
A220	50	12.80	n-type Si:P	[100]	3"	380	P/E	ITME / TopSil	CFZ 7.5-8.5	Test Wafers (Flat+90°v)
AG16	50	35.40	n-type Si:P	[100]	3"	380	P/E	aro 7-8 wks	FZ 3,000-6,000	SEMI, 1Flat MINIMUM 50 WAFERS
ST12	62	44.00	n-type Si:P	[111-3.5°] ±0.5°	3"	508 ±15	P/E	Topsil aro 2 wks	FZ >5,000	SEMI, 2Flats, Empak cst
AF22d	1	924.20	Intrinsic Si:-	[100]	3"	20,000	P/P	aro 7-8 wks	FZ >20,000	NO Flats
11P	20	30.40	p-type Si:B	[100]	3"	1,500	P/P	ITME aro 3 wks	20-30	SEMI Prime, 2Flats, Empak cst
19A	8	53.60	p-type Si:B	[100]	3"	3,000	P/P	ITME aro 3 wks	10-20	SEMI Prime, 2Flats, Individual cst
19E	15	47.60	p-type Si:B	[100]	3"	3,500	P/P	ITME aro 3 wks	10-20	SEMI, 2Flats, Individual cst
19D	11	70.40	p-type Si:B	[100]	3"	10,000	P/E	ITME aro 3 wks	6-8	SEMI Prime, 2Flats, hard cst
19G	20	43.60	p-type Si:B	[100]	3"	2,000	P/E	ITME aro 3 wks	6-7	SEMI Prime, 2Flats, Individual cst
11A	12	32.40	p-type Si:B	[100]	3"	950	P/E	ITME aro 3 wks	1-20	SEMI Prime, 2Flats, Empak cst
19C	22	40.80	p-type Si:B	[100]	3"	1,800	P/P	ITME aro 3 wks	1-5	SEMI, 2Flats, Individual cst
AF76	50	17.60	p-type Si:B	[100]	3"	550	P/E	aro 9 wks	1-100	NO Flats MINIMUM 50 WAFERS
12J	20	18.40	p-type Si:B	[100]	3"	380	P/E	ITME aro 3 wks	0.010-0.050	SEMI Prime, 2Flats, Empak cst
AF72b	25	74.00	p-type Si:B	[100]	3"	100 ±15	P/P	aro 9 wks	0.01-0.02	SEMI, 2Flats
12P	125	14.40	p-type Si:B	[100]	3"	380	P/E	ITME aro 3 wks	0.001-0.003	SEMI Prime, 2Flats, Empak cst
10P	50	18.80	p-type Si:B	[111] ±0.5°	3"	800	P/P	ITME aro 3 wks	15-30	SEMI Prime, 1Flat, Empak cst
19K	1	154.00	p-type Si:B	[111] ±0.5°	3"	30,000	C/C	ITME aro 3 wks	6-10	SEMI Prime, 1Flat, Individual cst
10C	50	23.60	p-type Si:B	[111]	3"	800	P/E	ITME aro 3 wks	5-7	SEMI, 1Flat, Empak cst
10L	50	16.40	p-type Si:B	[111] ±0.5°	3"	800	P/E	ITME aro 3 wks	5-7	SEMI Prime, 1Flat, Empak cst
9P	30	18.00	p-type Si:B	[111] ±0.5°	3"	800	P/E	ITME aro 3 wks	5-7	SEMI Prime, 1Flat, Empak cst
10S	14	20.40	p-type Si:B	[111] ±0.5°	3"	380	P/E	ITME aro 3 wks	1-10	SEMI, NO Flats, Empak cst
10R	150	14.00	p-type Si:B	[111] ±0.5°	3"	250	P/E	ITME aro 3 wks	0.040-0.055	SEMI Prime, 1Flat, Empak cst
10W	90	14.40	p-type Si:B	[111] ±0.5°	3"	250	P/E	ITME aro 3 wks	0.03-0.04	SEMI Prime, 1Flat, Empak cst
9U	75	16.00	p-type Si:B	[111] ±0.5°	3"	350	P/P	ITME aro 3 wks	0.01-0.03	SEMI Prime, 1Flat, Empak cst
AH43	250	9.40	p-type Si:B	[111-3.5° towards[110]] ±0.5°	3"	381	P/E	aro 6-8 wks	0.01-0.02	SEMI Prime, 1Flat MINIMUM 250 WAFERS
10Q	50	15.20	p-type Si:B	[111] ±0.5°	3"	280	P/E	ITME aro 3 wks	0.001-0.002	SEMI Prime, NO Flats, Empak cst
Z057	175	13.60	p-type Si:B	[111-3°] ±1°	3"	380	P/E	Rectic aro 1 wk	0.0006-0.0010	SEMI Test, 1Flat, Soft cst
19B	6	58.80	n-type Si:P	[100]	3"	5,000	P/E	ITME aro 3 wks	20-60	SEMI Prime, 1Flat, Individual cst
11X	12	21.60	n-type Si:P	[100]	3"	500	P/E	ITME aro 3 wks	10-20	SEMI Prime, 2Flats, Empak cst
11M	15	30.80	n-type Si:P	[100]	3"	1,000	P/E	ITME aro 3 wks	1-20	SEMI Prime, NO Flats
11R	200	14.00	n-type Si:P	[100]	3"	380	P/E	ITME aro 3 wks	1-10	SEMI Prime, 2Flats, Empak cst
12C	20	18.40	n-type Si:P	[100]	3"	280	P/P	ITME aro 3 wks	1-3	Prime, NO Flats, Empak cst
19F	3	94.80	n-type Si:P	[100]	3"	12,000	P/E	ITME aro 3 wks	1-20	SEMI, 2Flats, Individual cst
19H	18	51.20	n-type Si:P	[100]	3"	6,000	P/E	ITME aro 3 wks	1-20	SEMI Prime, 2Flats, Individual cst
12G	50	15.20	n-type Si:Sb	[100]	3"	450	P/E	ITME aro 3 wks	0.019-0.022	SEMI, 2Flats, Empak cst
12N	5	33.20	n-type Si:Sb	[100]	3"	380	P/P	ITME aro 3 wks	0.019-0.024	SEMI Prime, 2Flats, Empak cst
19O	18	49.80	n-type Si:P	[111] ±0.5°	3"	5,000	P/E	ITME aro 3 wks	25-35	SEMI, NO Flats, Individual cst
9V	20	32.80	n-type Si:P	[111] ±0.5°	3"	1,400	P/E	ITME aro 3 wks	25-35	SEMI Prime, 1Flat, Empak cst
19P	3	87.60	n-type Si:P	[111] ±1°	3"	10,000	P/E	ITME aro 3 wks	20-60	SEMI Prime, 1Flat, Individual cst
9G	7	27.60	n-type Si:P	[111] ±0.5°	3"	350	P/E	ITME aro 3 wks	7-10	SEMI, 2Flats, Empak cst
19I	10	55.60	n-type Si:P	[111] ±0.5°	3"	6,000	P/E	ITME aro 3 wks	5-15	SEMI Prime, 1Flat, Individual cst
10N	18	18.80	n-type Si:P	[111-4.5°] ±0.5°	3"	380	P/E	ITME aro 3 wks	2-5	SEMI Prime, 1Flat, Empak cst
10B	50	22.20	n-type Si:P	[111] ±0.5°	3"	250	P/E	ITME aro 3 wks	1-2	SEMI Prime, 2Flats, Empak cst
10E	11	22.40	n-type Si:P	[111-3°] ±0.5°	3"	450	P/E	ITME aro 3 wks	1-3	SEMI Prime, 2Flats, Empak cst
10T	11	22.40	n-type Si:P	[111] ±0.5°	3"	250	P/E	ITME aro 3 wks	1.0-5.5	SEMI Prime, 1Flat, Empak cst
19J	18	51.20	n-type Si:P	[111] ±0.5°	3"	6,000	P/E	ITME aro 3 wks	1-20	SEMI Prime, 2Flats, Individual cst
19L	15	56.00	n-type Si:P	[111] ±0.5°	3"	3,000	P/E	ITME aro 3 wks	1-20	SEMI Prime, 2Flats, Individual cst
9F	22	19.20	n-type Si:P	[111] ±0.5°	3"	250	P/P	ITME aro 3 wks	0.6-1.5	SEMI Prime, 1Flat, Empak cst
9D	7	38.40	n-type Si:P	[111] ±0.5°	3"	1,000	P/P	ITME aro 3 wks	0.5-2.0	SEMI Prime, 2Flats, Empak cst
10F	20	19.60	n-type Si:Sb	[111] ±0.5°	3"	380	P/E	ITME aro 3 wks	0.019-0.025	SEMI Prime, 2Flats, Empak cst
9E	30	16.80	n-type Si:Sb	[111-3°] ±0.5°	3"	380	P/E	ITME aro 3 wks	0.015-0.020	SEMI Prime, 2Flats, Empak cst
9Q	14	20.40	n-type Si:Sb	[111-3.5°] ±0.5°	3"	380	P/E	ITME aro 3 wks	~0.013	SEMI Prime, 2Flats, Empak cst
9B	30	15.60	n-type Si:Sb	[111-4°] ±0.5°	3"	380	P/E	ITME aro 3 wks	0.011-0.015	SEMI Prime, 2Flats, Empak cst
10V	50	15.60	n-type Si:Sb	[111-3°] ±0.5°	3"	300	P/E	ITME aro 3 wks	0.010-0.015	SEMI Prime, 2Flats, Empak cst
9A	150	17.60	n-type Si:As	[111-3°] ±0.5°	3"	360	P/E	ITME aro 3 wks	0.002-0.005	SEMI Prime, 2Flats, Empak cst
10K	15	24.80	n-type Si:As	[111-4°] ±0.5°	3"	380	P/E	ITME aro 3 wks	0.001-0.005	SEMI Prime, 2Flats, Empak cst
AD95c	600	23.60	n-type Si:As	[111-4.0°] ±0.5°	3"	889	P/EOx	aro 8 wks	<0.003	SEMI, TTV<5µm (with 4,500– 5,500A LTO) MINIMUM 600 WAFERS MINIMUM 600 WAFERS
AD95d	600	22.20	n-type Si:As	[111-4.0°] ±0.5°	3"	889	P/EOx	aro 6-7 wks	<0.004	SEMI,(with 4,500– 5,500A LTO), TTV<5µm MINIMUM 600 WAFERS MINIMUM 600 WAFERS

2" Wafers

Note: Surface - P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that layer); Material - CZ unless noted
Note: Items sold in quantities of 25, unless noted

Item	Qty in Stock	Price $/unit	Material	Orient.	Diam (mm)	Thck (μm)	Surf.	Source	Resistivity Ωcm	Comment
9852	100	25.60	p-type Si:B	[100]	2"	250	P/P	ITME	FZ >500 {510-1,200}	SEMI, 2Flats, hard cst
9921	85	30.60	p-type Si:B	[100]	2"	250	P/P	SPC	FZ >500	SEMI Prime, 2Flats, hard cst
K921	1	25.00	p-type Si:B	[100]	2"	250	BROKEN	SPC	FZ >500	SEMI Prime, 2Flats, hard cst
1040	7	42.20	p-type Si:B	[100]	2"	600	P/E	ITME	FZ 1.5-10.0	SEMI, 2Flats, hard cst
K017	38	60.40	p-type Si:B	[111] ±0.5°	2"	2,000	P/E	ITME	FZ 10,000-20,000	SEMI, 1Flat Cassettes of 5 wafers and one cassette of 3 wafers
L017	10	55.40	p-type Si:B	[111] ±0.5°	2"	2,000	P/E	ITME	FZ 8,000-10,000	SEMI, 1Flat
M017	1	85.40	p-type Si:B	[111] ±0.5°	2"	300	P/P	ITME	FZ 8,000-20,000	SEMI, 1Flat, Individual cst, Has Edge Chips
B927	25	35.20	p-type Si:B	[111] ±0.5°	2"	625	P/P	SPC	FZ 5,400-20,000	SEMI, 1Flat
9827	50	39.20	p-type Si:B	[111] ±0.5°	2"	280	P/E	SPC	FZ >1,000	SEMI Prime, 1Flat
9733	19	35.60	n-type Si:P	[100-4° towards[111]] ±0.5°	2"	400	P/P	SemPro	FZ 3,300-6,200	SEMI, 1Flat, hard cst
9737	18	26.00	n-type Si:P	[100]	2"	300	P/E	ITME	FZ >2,000	SEMI Prime, 1Flat, hard cst
I797	3	160.00	n-type Si:P	[100]	2"	70 ±15	P/P	ITME	FZ >1,000 {1,500-1,930}	SEMI, 2Flats, Individual cst
D499	13	39.60	n-type Si:P	[100]	2"	1,000	P/P	ITME	FZ >750 {830-3,000}	SEMI, 2Flats, hard cst
H748	17	35.60	n-type Si:P	[100]	2"	1,000	P/P	ITME	FZ >750	SEMI, 2Flats, hard cst
9936	23	19.00	n-type Si:P	[100]	2"	200	P/P	ITME	FZ 500-1,000	SEMI, 2Flats, hard cst 3 cassettes: 3, 5, 15 wafers
E127	15	39.60	n-type Si:P	[100]	2"	280	P/P	ITME	FZ 20-70	SEMI, 2Flats, hard cst
9629	11	49.60	n-type Si:P	[111] ±0.5°	2"	430	P/E	ITME	FZ 8,200-13,000 {8,000-13,000}	2 cassettes: 5 wafers, 6 wafers
C261	20	55.60	n-type Si:P	[111] ±0.5°	2"	280	P/P	ITME	FZ >2,000 {2,000-5,000}	SEMI, 1Flat, hard cst 2 cassettes: 5 wafers, 15 wafers
D621	7	49.60	n-type Si:P	[111] ±0.5°	2"	2,000	P/E	ITME	FZ 600-1,400	SEMI, 2Flats
1064	50	19.60	n-type Si:P	[111] ±0.5°	2"	500	P/P	ITME	FZ >300	SEMI, 2Flats, hard cst
A525	185	8.00	n-type Si:P	[111] ±0.5°	2"	400	E/E	TopSil #58857	FZ NTD 93-113	SEMI, NO Flats, in coin-roll
B525	58	8.00	n-type Si:P	[111] ±0.5°	2"	400	E/E	TopSil #20175	FZ NTD 93-113	SEMI,NO Flats, in coin-roll
C525	50	8.00	n-type Si:P	[111] ±0.5°	2"	400	E/E	TopSil #26368	FZ NTD 93-113	SEMI, NO Flats, coin roll
E640	13	59.50	n-type Si:P	[111-0.03°] ±0.01°	2"	550	P/E	ITME	FZ 40-70 {46-69}	SEMI Prime, 1Flat, hard cst 4 cassettes: 2 wafers, 2 wafers, 4 wafers, 5 wafers
F194	25	25.80	Si:?	[100]	2"	300	P/P	ITME due 9/15	FZ >5,000	SEMI
D685	4	59.60	Intrinsic Si:-	[111]	2"	300	P/E	ITME	FZ n-type 4,000-6,700	SEMI, 1Flat
9954	24	15.20	p-type Si:B	[100]	2"	300	P/E	ITME	6.3-7.0	SEMI, 1Flat, hard cst
9558	25	14.80	p-type Si:B	[100]	2"	300	P/P	ITME	5-7	SEMI, 2Flats, hard cst
1007	25	16.00	p-type Si:B	[100]	50mm	250	P/P	ITME	1-10	SEMI Prime, 2Flats, hard cst
B043	45	14.00	p-type Si:B	[100]	2"	350	P/E	ITME	1-10	SEMI, 2Flats, hard cst
C008	75	19.60	p-type Si:Ga	[100]	2"	350	P/P	ITME	1-5	SEMI, hard cst
H169	100	6.90	p-type Si:B	[100]	2"	275	P/E	Prolog due 8/05	1-10	SEMI Prime, 1Flat
1081	225	7.80	p-type Si:B	[100]	2"	300	P/E	ITME due 8/21	1-10	SEMI, 2Flats, hard cst
B081	250	7.80	p-type Si:B	[100]	2"	300	P/E	ITME due 9/21	1-10	SEMI, 2Flats, hard cst
C081	250	7.80	p-type Si:B	[100]	2"	300	P/E	ITME due 10/21	1-10	SEMI, 2Flats, hard cst
D081	250	7.80	p-type Si:B	[100]	2"	300	P/E	ITME due 11/21	1-10	SEMI, 2Flats, hard cst
B993	50	11.60	p-type Si:B	[100]	2"	300	P/E	ITME	0.01-0.02 {0.018-0.019}	SEMI, 2Flats, hard cst
C993	225	11.60	p-type Si:B	[100]	2"	300	P/E	ITME	0.010-0.020 {0.017-0.020}	SEMI, 2Flats, hard cst
D993	125	11.60	p-type Si:B	[100]	2"	300	P/E	ITME	0.01-0.02 {0.018-0.019}	SEMI, 2Flats, hard cst
E993	75	11.60	p-type Si:B	[100]	2"	300	P/E	ITME	0.010-0.020 {0.018-0.019}	SEMI, 2Flats, hard cst
J993	6	31.60	p-type Si:B	[100]	2"	300	P/E	ITME	0.01-0.02 {0.018-0.019}	SEMI, 2Flats, hard cst
1130	50	18.20	p-type Si:B	[100]	2"	280	P/E	ITME due 7/30	0.001-0.005	SEMI, 2Flats, hard cst
F133	200	12.80	p-type Si:B	[100]	2"	300	P/E	ITME due 8/25	0.001-0.005	SEMI, 2Flats, hard cst
9726	50	6.90	p-type Si:B	[100]	2"	420	P/P	Prolog	<0.005	SEMI, 1 Flat, hard cst, Striation rings visible
D808	10	19.60	p-type Si:B	[111-10° towards[112]]	2"	280	P/E	ITME	20-35	SEMI, 1Flat, hard cst
B168	13	96.50	p-type Si:B	[111] ±0.5°	2"	5,000	P/E	ITME	7-10 {7.0-9.7}	SEMI, 1Flat, Individual cst
C656	75	14.00	p-type Si:B	[111-3.5°] ±0.5°	2"	300	P/P	ITME	0.011-0.020	SEMI, 1Flat
9719	25	9.60	p-type Si:B	[111-3.5°] ±0.5°	2"	300	P/E	ITME	0.01-0.02	SEMI, 1Flat, hard cst
7027	50	120.00	p-type Si:Ga	Poly.	2"		C/C	ITME	0.024-0.036	Gallium doped Concentrate (each with measured Gallium content)
9788	22	29.60	n-type Si:As	[110] ±0.5°	2"	420	P/P	SPC	0.001-0.007	SEMI, SEMI Flat @ [1,-1,0].
9765	25	17.60	n-type Si:P	[100]	2"	300	P/E	ITME	19-35	SEMI, 2Flats, hard cst
9869	75	7.80	n-type Si:P	[100]	2"	300	P/P	Prolog	5-15	SEMI, 2Flats
B885	50	12.00	n-type Si:P	[100]	2"	300	P/P	ITME	5-15	SEMI, 2Flats
1068	25	8.00	n-type Si:P	[100]	2"	300	P/E	ITME	1-10 {3.5-7.0}	SEMI Prime, 2Flats, hard cst
C068	125	8.00	n-type Si:P	[100]	2"	300	P/E	ITME	1-10 {3.5-7.0}	SEMI Prime, 2Flats, hard cst
G169	300	7.60	n-type Si:P	[100]	2"	275	P/E	Prolog due 8/05	1-20	SEMI Prime, 2Flats
D068	250	8.00	n-type Si:P	[100]	2"	300	P/E	ITME due 9/06	1-10	SEMI Prime, 2Flats, hard cst
E068	250	8.00	n-type Si:P	[100]	2"	300	P/E	ITME due 10/22	1-10	SEMI Prime, 2Flats, hard cst
C272	25	7.80	n-type Si:Sb	[100] ±1°	2"	300	P/E	Prolog	0.01-0.02	SEMI Prime, 2Flats, hard cst
F520	75	7.80	n-type Si:Sb	[100]	2"	275	P/E	Prolog	0.01-0.02	SEMI Prime, 1Flat, hard cst
9272	9	18.00	n-type Si:As	[100] ±1°	2"	300	P/E	Prolog	0.001-0.005	SEMI, 2Flats, hard cst, TTV<10µm, Bow<20µm, Warp<20µm,
D084	600	17.60	n-type Si:As	[100]	2"	300	P/E	SPC due 8/02	0.001-0.005	SEMI, 2Flats, Empak cst
D10	823	3.10	n-type Si:P	[111]	2"	400	L/L	Semico	120-170	Lapped & edged
9427	100	7.20	n-type Si:P	[111]	2"	330	P/E	Prolog	1-100	SEMI Prime, 2Flats, Empak cst
B117	20	80.00	n-type Si:P	[111] ±0.5°	2"	5,000	P/E	ITME due 8/13	1-100	SEMI, NO Flats, Individual cst No minimum order
9839	3	28.60	n-type Si:Sb	[111-5° towards[112]]	2"	280	P/E	ITME	0.05-0.12	SEMI, 2Flats, hard cst
9358	125	11.60	n-type Si:Sb	[111-2.5°] ±0.5°	2"	280	P/E	ITME	0.012-0.017	SEMI, 2Flats, hard cst
C372	25	11.00	n-type Si:Sb	[111-2°] ±0.5°	2"	280	P/E	ITME	0.008-0.019	SEMI, 2Flats, hard cst
1156	375	8.60	n-type Si:As	[111] ±0.5°	2"	300	P/E	Prolog due 8/12	0.002-0.005	SEMI Prime, 2Flats
9702	50	20.20	p-type Si:B	[100]	2"	300	OxP/EOx	Proces	0.001-0.005	SEMI, 2Flats, (both sides with 1,500 Angstoms oxide)
1X	100	22.80	n-type Si:P	[111] ±0.5°	2"	300	P/E	ITME aro 3 wks	NTD 7-8	SEMI, 2Flats, hard cst
4H	50	27.20	p-type Si:B	[110]	2"	300	P/E	ITME aro 3 wks	FZ 28-38	SEMI, 1Flat, hard cst
6G	50	19.60	p-type Si:B	[100]	2"	280	P/P	ITME aro 3 wks	FZ >100	SEMI, 1Flat, hard cst
6L	250	19.60	p-type Si:B	[100]	2"	280	P/P	ITME aro 3 wks	FZ >100	SEMI, 2Flats, hard cst
6K	25	46.00	p-type Si:B	[100]	2"	110	P/P	ITME aro 3 wks	FZ 70-80	SEMI, NO Flats, hard cst
7I	45	19.60	p-type Si:B	[100]	2"	600	P/P	ITME aro 3 wks	FZ >50	SEMI, 2Flats, hard cst
7W	50	19.60	p-type Si:B	[100]	2"	300	P/P	ITME aro 3 wks	FZ 50-90	SEMI, 1Flat, hard cst
6O	200	19.60	p-type Si:B	[100]	2"	300	P/P	ITME aro 3 wks	FZ 1-10	SEMI, 2Flats, hard cst
8C	20	28.80	p-type Si:B	[100]	2"	1,000	P/E	ITME aro 3 wks	FZ 0.07-0.10	SEMI, 2Flats, hard cst
2S	10	34.00	p-type Si:B	[111] ±0.5°	2"	1,000	P/E	ITME aro 3 wks	FZ 600-800	SEMI, 1Flat, hard cst
2V	15	19.60	p-type Si:B	[111]	2"	500	P/E	ITME aro 3 wks	FZ 30-80	SEMI, 1Flat, hard cst
4Q	8	45.20	n-type Si:P	[110]	2"	900	P/E	ITME aro 3 wks	FZ 100-370	SEMI, 1Flat, hard cst
4O	35	35.60	n-type Si:P	[110]	2"	1,000	P/E	ITME aro 3 wks	FZ 2.5-3.5	NO Flats, hard cst
4K	25	42.40	n-type Si:P	[110]	2"	120	P/E	ITME aro 3 wks	FZ 0.7-1.3	SEMI, 1 flat @ [111]
7P	40	24.40	n-type Si:P	[100]	2"	500	P/P	ITME aro 3 wks	FZ 3,000-4,000	SEMI, 2Flats, hard cst
7L	75	19.60	n-type Si:P	[100]	2"	300	P/P	ITME aro 3 wks	FZ 1,100-3,000	SEMI, 2Flats, hard cst
7N	50	20.00	n-type Si:P	[100]	2"	200	P/P	ITME aro 3 wks	FZ >1,000	SEMI, 2Flats, hard cst
6I	60	20.00	n-type Si:P	[100]	2"	280	P/P	ITME aro 3 wks	FZ 600-1,200	SEMI, 2Flats, hard cst
7Q	25	20.80	n-type Si:P	[100]	2"	500	P/P	ITME aro 3 wks	FZ >500	SEMI, 2Flats, hard cst
6M	30	21.60	n-type Si:P	[100]	2"	300	P/E	ITME aro 3 wks	FZ 300-1,000	SEMI, 2Flats, hard cst
6H	25	20.80	n-type Si:P	[100]	2"	280	P/P	ITME aro 3 wks	FZ >200	SEMI, 2Flats, hard cst
7J	50	19.60	n-type Si:P	[100]	2"	500	P/E	ITME aro 3 wks	FZ >200	SEMI, 2Flats, hard cst
7O	25	25.60	n-type Si:P	[100]	2"	175	P/P	ITME aro 3 wks	FZ >200	SEMI, 2Flats, hard cst
8B	50	16.40	n-type Si:P	[100]	2"	280	P/E	ITME aro 3 wks	FZ >50	SEMI, 2Flats, hard cst
7M	15	21.20	n-type Si:P	[100]	2"	500	P/P	ITME aro 3 wks	FZ 20-30	SEMI, 2Flats, hard cst
7T	45	19.60	n-type Si:P	[100]	2"	280	P/P	ITME aro 3 wks	FZ 20-70	SEMI, 2Flats, hard cst
6A	40	14.80	n-type Si:P	[100]	2"	300	P/E	ITME aro 3 wks	FZ 13-40	SEMI, 1Flat, hard cst
7S	30	20.40	n-type Si:P	[100]	2"	300	P/E	ITME aro 3 wks	FZ 8-16	SEMI, 1Flat, hard cst
V27d	60	62.40	n-type Si:P	[100]	2"	300	P/E	ITME aro 4 wks	FZ 0.7-1.0	SEMI Prime, 1Flat, hard cst; We can pick resistivities in this range
V27e	150	62.40	n-type Si:P	[100]	2"	300	P/E	ITME aro 4 wks	FZ 0.5-1.0	SEMI Prime, 1Flat, hard cst; We can pick resistivities in this range
ST11	575	16.00	n-type Si:P	[111]	2"	381	P/E	Topsil Aro 1-2 wks	FZ 2,000-5,000	SEMI
2M	25	22.00	n-type Si:P	[111] ±0.5°	2"	500	P/P	ITME aro 3 wks	FZ 1,600-2,200	SEMI, 2Flats, hard cst
2R	25	20.80	n-type Si:P	[111] ±0.5°	2"	500	P/P	ITME aro 3 wks	FZ 500-1,000	SEMI, 1Flat, hard cst
1E	25	25.60	n-type Si:P	[111] ±0.1°	2"	480	P/E	ITME aro 3 wks	FZ 300-1,000	SEMI, 1Flat, hard cst
2T	15	27.00	n-type Si:P	[111] ±0.5°	2"	280	P/P	ITME aro 3 wks	FZ 300-400	SEMI, 1Flat, hard cst
2K	15	21.20	n-type Si:P	[111] ±0.5°	2"	400	P/P	ITME aro 3 wks	FZ 190-300	SEMI, 2Flats, hard cst
1F	100	15.60	n-type Si:P	[111] ±0.5°	2"	300	P/P	ITME aro 3 wks	FZ >150	SEMI, 2Flats, hard cst
1T	70	16.00	n-type Si:P	[111] ±0.5°	2"	300	P/P	ITME aro 3 wks	FZ 100-300	SEMI, 2Flats, hard cst
1A	50	15.60	n-type Si:P	[111] ±0.5°	2"	300	P/E	ITME aro 3 wks	FZ 70-95	SEMI, 1Flat, hard cst
3B	25	15.60	n-type Si:P	[111] ±0.5°	2"	300	P/E	ITME aro 3 wks	FZ 70-95	SEMI, 1Flat, hard cst
3C	200	15.60	n-type Si:P	[111] ±0.5°	2"	300	P/E	ITME aro 3 wks	FZ 70-90	SEMI, 2Flats, hard cst
1P	150	15.60	n-type Si:P	[111] ±0.5°	2"	280	P/E	ITME aro 3 wks	FZ >60	SEMI, 2Flats, hard cst
2W	300	15.60	n-type Si:P	[111-1°] ±0.5°	2"	280	P/E	ITME aro 3 wks	FZ 60-90	SEMI, 2Flats, hard cst
3F	50	15.60	n-type Si:P	[111] ±0.5°	2"	500	P/E	ITME aro 3 wks	FZ 53-61	SEMI, 2Flats, hard cst
18H	10	60.00	n-type Si:P	[111] ±0.5°	2"	5,000	P/E	ITME aro 3 wks	FZ 50-80	SEMI, NO Flats, Individual cst
1I	20	17.20	n-type Si:P	[111] ±0.5°	2"	300	P/E	ITME aro 3 wks	FZ >50	SEMI, 2Flats, hard cst
2O	50	16.40	n-type Si:P	[111] ±0.5°	2"	500	P/P	ITME aro 3 wks	FZ 30-40	SEMI, 2Flats, hard cst
2H	15	17.60	n-type Si:P	[111] ±0.5°	2"	500	P/E	ITME aro 3 wks	FZ 20-40	SEMI, 2Flats, hard cst
V27c	125	23.60	n-type Si:P	[111] ±0.5°	2"	300	P/E	ITME aro 4 wks	FZ NTD 7-8	SEMI, 2Flats, hard cst
AI40b	25	38.40	Intrinsic Si:-	[100]	2"	380	P/P	aro 7-8 wks	FZ >10,000	NO Flats
8E	11	59.60	p-type Si:B	[100]	2"	110	P/P	ITME aro 3 wks	60-80	SEMI, 1Flat, hard cst
8G	20	55.60	p-type Si:B	[100]	2"	115	P/E	ITME aro 3 wks	60-80	SEMI, 1Flat, hard cst
8V	20	17.20	p-type Si:B	[100]	2"	300	P/E	ITME aro 3 wks	18-22	SEMI, 2Flats, hard cst
AG29b	50	13.40	p-type Si:B	[100]	2"	280	P/E	aro 8-9 wks	10-20	SEMI MINIMUM 50 WAFERS
AG29c	50	21.20	p-type Si:B	[100]	2"	280	P/E	aro 9 wks	10-20	SEMI MINIMUM 50 WAFERS
8W	12	28.80	p-type Si:B	[100]	2"	900	P/P	ITME aro 3 wks	7-9	SEMI, 2Flats, hard cst
8F	100	13.20	p-type Si:B	[100]	2"	250	P/P	ITME aro 3 wks	6-7	SEMI, 1Flat, hard cst
8N	20	16.00	p-type Si:B	[100]	2"	300	P/P	ITME aro 3 wks	6-7	SEMI, NO Flats, hard cst
6R	150	12.80	p-type Si:B	[100]	2"	300	P/P	ITME aro 3 wks	5-10	SEMI, 2Flats, hard cst
8Q	75	12.80	p-type Si:B	[100]	2"	300	P/P	ITME aro 3 wks	5-7	SEMI, 2Flats, hard cst
5E	20	16.00	p-type Si:B	[100-6°]	2"	300	P/E	ITME aro 3 wks	4-8	SEMI, 2Flats, hard cst
6U	100	15.60	p-type Si:B	[100]	2"	500	P/E	ITME aro 3 wks	1-10	SEMI, 2Flats, hard cst
7V	50	14.00	p-type Si:B	[100]	2"	350	P/E	ITME aro 3 wks	1-10	SEMI, 2Flats, hard cst
8J	32	14.80	p-type Si:B	[100]	2"	450	P/P	ITME aro 3 wks	1-10	SEMI, 2Flats, hard cst
8S	35	23.60	p-type Si:B	[100]	2"	900	P/P	ITME aro 3 wks	1-10	SEMI, 2Flats, hard cst
6S	70	13.60	p-type Si:B	[100]	2"	250	P/P	ITME aro 3 wks	0.60-0.67	SEMI, 2Flats, hard cst
8O	50	14.00	p-type Si:B	[100]	2"	280	P/E	ITME aro 3 wks	0.5-0.6	SEMI, NO Flats, hard cst
6B	20	26.80	p-type Si:B	[100]	2"	1,000	P/E	ITME aro 3 wks	0.09-0.10	SEMI, 2Flats, hard cst
6D	24	16.40	p-type Si:B	[100]	2"	280	P/E	ITME aro 3 wks	0.08-0.10	SEMI, 2Flats, hard cst
6Q	50	23.60	p-type Si:B	[100]	2"	1,000	P/E	ITME aro 3 wks	0.08-0.09	SEMI, 2Flats, hard cst
7C	100	14.40	p-type Si:B	[100]	2"	280	P/P	ITME aro 3 wks	0.080-0.095	SEMI, 1Flat, hard cst
7U	20	16.00	p-type Si:B	[100]	2"	500	P/E	ITME aro 3 wks	0.07-0.10	SEMI, 2Flats, hard cst
7H	25	16.00	p-type Si:B	[100]	2"	500	P/E	ITME aro 3 wks	0.06-0.07	SEMI, 2Flats, hard cst
7D	20	17.20	p-type Si:B	[100]	2"	500	P/E	ITME aro 3 wks	0.01-0.02	SEMI, 2Flats, hard cst
AF72	25	56.60	p-type Si:B	[100]	2"	100 ±15	P/P	aro 9 wks	0.01-0.02	SEMI, 2Flats
7B	100	13.20	p-type Si:B	[100]	2"	280	P/P	ITME aro 3 wks	0.008-0.020	SEMI, 2Flats, hard cst
7E	75	14.80	p-type Si:B	[100]	2"	300	P/P	ITME aro 3 wks	0.003-0.005	SEMI, NO Flats, hard cst
8X	18	30.60	p-type Si:B	[100]	2"	1,000	P/P	ITME aro 3 wks	<3	SEMI, 2Flats, hard cst
5L	15	15.20	p-type Si:B	[111-10° towards[112]] ±0.5°	2"	300	P/E	ITME aro 3 wks	20-35	toward [112]
1D	24	13.20	p-type Si:B	[111-3.5°] ±0.5°	2"	380	P/E	ITME aro 3 wks	>10	SEMI, 1Flat, hard cst
5V	4	36.00	p-type Si:B	[111-2° towards[112]] ±0.5°	2"	500	P/P	ITME aro 3 wks	10-30	SEMI, 1Flat, hard cst
5W	14	19.80	p-type Si:B	[111-5° towards[112]]	2"	500	P/P	ITME aro 3 wks	10-30	SEMI, 1Flat, hard cst
18R	6	48.00	p-type Si:B	[111] ±0.5°	2"	3,000	P/P	ITME aro 3 wks	8-11	SEMI, 1Flat, Individual cst
5K	20	28.00	p-type Si:B	[111-4°]	2"	1,000	P/P	ITME aro 3 wks	6-13	SEMI, 1Flat, hard cst
3E	15	21.00	p-type Si:B	[111-4°] ±0.5°	2"	300	P/P	ITME aro 3 wks	4.8-5.4	SEMI, 1Flat, hard cst
1W	30	15.60	p-type Si:B	[111] ±0.5°	2"	500	P/E	ITME aro 3 wks	1-4	SEMI, 2Flats, hard cst
5I	24	14.00	p-type Si:B	[111-10° towards[112]]	2"	280	P/E	ITME aro 3 wks	0.5-0.6	SEMI, 1Flat, hard cst
5J	10	19.60	p-type Si:B	[111-10° towards[112]] ±0.5°	2"	280	P/E	ITME aro 3 wks	0.5-0.6	SEMI, 1Flat, hard cst
2Q	40	14.80	p-type Si:B	[111] ±0.5°	2"	300	P/E	ITME aro 3 wks	0.2-0.4	SEMI, 1Flat, hard cst
2B	100	12.00	p-type Si:B	[111-3°] ±0.5°	2"	300	P/E	ITME aro 3 wks	0.018-0.020	SEMI, 2Flats, hard cst
2J	100	11.60	p-type Si:B	[111-3.5°] ±0.5°	2"	300	P/E	ITME aro 3 wks	~0.014	SEMI Prime, 2Flats, hard cst
1U	60	14.00	p-type Si:B	[111] ±0.5°	2"	300	P/P	ITME aro 3 wks	0.01-0.02	SEMI, 1Flat, hard cst
1V	100	12.00	p-type Si:B	[111-3.5°] ±0.5°	2"	300	P/E	ITME aro 3 wks	0.01-0.02	SEMI, 1Flat, hard cst
2E	50	20.80	p-type Si:B	[111] ±0.5°	2"	725	P/P	ITME aro 3 wks	0.003-0.005	SEMI Prime, 1Flat, hard cst
5G	20	50.80	p-type Si:B	[112]	2"	300	P/E	ITME aro 3 wks	1-10	SEMI, 1Flat, hard cst
5H	35	48.80	p-type Si:B	[113]	2"	300	P/E	ITME aro 3 wks	1-10	SEMI, 1Flat, hard cst
5F	25	49.60	p-type Si:B	[557] ±0.5°	2"	450	P/E	ITME aro 3 wks	1-10	SEMI, 1Flat, hard cst
3X	20	30.40	n-type Si:P	[110] ±0.5°	2"	300	P/E	ITME aro 3 wks	16-35	SEMI, 1Flat, hard cst
4C	30	33.60	n-type Si:P	[110]	2"	1,000	P/E	ITME aro 3 wks	10-20	SEMI, 1Flat, hard cst
4D	11	39.00	n-type Si:P	[110]	2"	1,000	P/P	ITME aro 3 wks	~4	NO Flats, hard cst
4A	25	29.20	n-type Si:P	[110]	2"	400	P/E	ITME aro 3 wks	1-3	SEMI, 1Flat, hard cst
8M	30	15.60	n-type Si:P	[100]	2"	500	P/P	ITME aro 3 wks	15-18	SEMI, 2Flats, hard cst
6X	35	24.80	n-type Si:P	[100]	2"	900	P/P	ITME aro 3 wks	4-6	SEMI, 2Flats, hard cst
6V	75	16.00	n-type Si:P	[100]	2"	500	P/E	ITME aro 3 wks	1-10	SEMI, 2Flats, hard cst
8D	20	65.60	n-type Si:P	[100]	2"	100	P/E	ITME aro 3 wks	1-10	SEMI, 2Flats, hard cst
8P	50	12.80	n-type Si:P	[100]	2"	280	P/E	ITME aro 3 wks	1-20	SEMI, 2Flats, hard cst
8R	50	20.00	n-type Si:P	[100]	2"	750	P/E	ITME aro 3 wks	1-20	SEMI, 2Flats, hard cst
8U	50	25.60	n-type Si:P	[100]	2"	200	P/P	ITME aro 3 wks	1-20	SEMI, 2Flats, hard cst
7F	10	20.80	n-type Si:Sb	[100]	2"	280	P/P	ITME aro 3 wks	0.01-0.03	SEMI, 2Flats, hard cst
7G	15	17.60	n-type Si:Sb	[100]	2"	300	P/E	ITME aro 3 wks	0.008-0.020	SEMI, 2Flats, hard cst
6C	75	19.20	n-type Si:As	[100]	2"	300	P/E	ITME aro 3 wks	0.001-0.005	SEMI, 2Flats, hard cst
6E	50	21.20	n-type Si:As	[100]	2"	500	P/E	ITME aro 3 wks	0.001-0.005	SEMI, 2Flats, hard cst
AE99	600	17.60	n-type Si:As	[100]	2"	300	P/E	aro wks	0.001-0.005	SEMI, 2Flats, Empak cst MINIMUM 600 WAFERS
2U	75	19.60	n-type Si:P	[111] ±0.5°	2"	500	P/P	ITME aro 3 wks	130-150	SEMI, 2Flats, hard cst
2C	45	13.20	n-type Si:P	[111] ±0.5°	2"	300	P/E	ITME aro 3 wks	35-55	SEMI, 2Flats, hard cst
1N	100	14.80	n-type Si:P	[111] ±0.5°	2"	250	P/E	ITME aro 3 wks	25-45	SEMI, NO Flats, hard cst
1Q	25	18.40	n-type Si:P	[111] ±0.5°	2"	700	P/E	ITME aro 3 wks	20-30	SEMI, 2Flats, hard cst
V27b	100	15.60	n-type Si:P	[111] ±0.5°	2"	300	P/E	ITME aro 4 wks	20-25	SEMI, 1Flat, hard cst
5N	25	12.40	n-type Si:P	[111-1.1° towards[112]] ±0.5°	2"	280	P/E	ITME aro 3 wks	18-21	SEMI, 2Flats, hard cst
18E	7	55.60	n-type Si:P	[111] ±0.5°	2"	6,000	P/E	ITME aro 3 wks	11-14	SEMI, 1Flat, Individual cst
1R	25	16.00	n-type Si:P	[111] ±0.5°	2"	500	P/P	ITME aro 3 wks	10-12	SEMI, 2Flats, hard cst
3K	4	36.00	n-type Si:P	[111-3°]	2"	600	P/E	ITME aro 3 wks	~10	SEMI, 2Flats, hard cst
3L	7	25.20	n-type Si:P	[111-5°] ±0.5°	2"	600	P/E	ITME aro 3 wks	~10	SEMI, 2Flats, hard cst
5B	43	13.20	n-type Si:P	[111-4° towards[112]] ±0.5°	2"	500	P/E	ITME aro 3 wks	5-10	SEMI Prime, 2Flats, hard cst
5C	12	19.80	n-type Si:P	[111-5° towards[112]]	2"	500	P/E	ITME aro 3 wks	5-10	SEMI, 2Flats, hard cst
5D	12	19.80	n-type Si:P	[111-6° towards[112]]	2"	500	P/E	ITME aro 3 wks	5-10	SEMI Prime, 2Flats, hard cst
2G	75	12.40	n-type Si:P	[111] ±0.5°	50mm	500	P/E	ITME aro 3 wks	2.2-3.8	SEMI, 2Flats, hard cst
5R	22	14.40	n-type Si:P	[111-8°] ±0.5°	2"	280	P/E	ITME aro 3 wks	1.3-1.8	SEMI, 2Flats, hard cst
1K	35	14.00	n-type Si:P	[111] ±0.5°	2"	300	P/P	ITME aro 3 wks	1-10	SEMI, 2Flats, hard cst
1S	75	18.40	n-type Si:P	[111] ±0.5°	2"	420	P/P	ITME aro 3 wks	1-20	SEMI, 2Flats, hard cst
2I	50	12.80	n-type Si:P	[111] ±0.5°	2"	500	P/E	ITME aro 3 wks	1-10	SEMI, 2Flats, hard cst
2L	50	12.80	n-type Si:P	[111] ±0.5°	2"	330	P/E	ITME aro 3 wks	1-20	SEMI, 1Flat, hard cst
5S	60	10.40	n-type Si:P	[111-3.5°] ±0.5°	2"	280	P/E	ITME aro 3 wks	1-30	SEMI, 2Flats, hard cst
1C	10	20.80	n-type Si:P	[111] ±0.5°	2"	300	P/E	ITME aro 3 wks	0.1-0.5	SEMI, 2Flats, hard cst
3G	5	41.60	n-type Si:P	[111] ±0.5°	2"	1,000	P/E	ITME aro 3 wks	0.1-0.3	SEMI, 2Flats, hard cst
5T	25	12.80	n-type Si:Sb	[111-1°] ±0.5°	2"	500	P/E	ITME aro 3 wks	0.016-0.017	SEMI, 2Flats, hard cst
2F	10	20.80	n-type Si:Sb	[111] ±0.5°	2"	280	P/E	ITME aro 3 wks	0.013-0.016	SEMI, 2Flats, hard cst
18S	24	40.00	n-type Si:P	[111] ±0.5°	2"	3,000	P/E	ITME aro 3 wks	~0.012	SEMI, NO Flats, Individual cst
1J	22	15.60	n-type Si:Sb	[111-2°] ±0.5°	2"	280	P/E	ITME aro 3 wks	0.008-0.015	SEMI, 2Flats, hard cst
2N	50	22.40	n-type Si:As	[111] ±0.5°	2"	300	P/E	ITME aro 3 wks	0.001-0.005	SEMI, 2Flats, hard cst
2P	25	22.00	n-type Si:As	[111-0.5°] ±0.5°	2"	360	P/E	ITME aro 3 wks	0.001-0.005	SEMI, 2Flats, hard cst

1" Wafers

Note: Surface - P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that layer); Material - CZ unless noted
Note: Items sold in quantities of 25, unless noted

Item	Qty in Stock	Price $/unit	Material	Orient.	Diam (mm)	Thck (μm)	Surf.	Source	Resistivity Ωcm	Comment
D565	25	16.40	n-type Si:P	[111] ±0.5°	1"	250	P/P	ITME	FZ >600	SEMI, 1Flat, Soft cst
1003	44	26.20	Intrinsic Si:-	[100]	1"	280	P/E	SPC	FZ >10,000	NO Flats
B444	1	120.00	p-type Si:B	[510]	1"	1,000	P/E	ITME	1-100 {7.4-7.4}	NO Flats
1025	125	13.00	p-type Si:B	[100]	24.2	300	P/E	ITME	1-100 {6-8}	SEMI, Diameter 24.2±0.3mm, 1Flat, Soft cst
B051	25	19.60	n-type Si:As	[100]	1"	300	P/E	ITME	0.001-0.005	SEMI, 1Flat, hard cst
9593	25	18.40	n-type Si:As	[111] ±0.5°	1"	380	P/E	ITME	0.001-0.007 {0.0035-0.0043}	SEMI, 1Flat
B192	18	33.80	n-type Si:As	[111] ±0.5°	1"	1,000	P/P	ITME	0.001-0.005 {0.0048-0.0049}	SEMI, 1Flat, Soft cst 2 cassettes: 13 wafers, 5 wafers
17F	50	14.00	n-type Si:P	[100]	1"	300	P/E	ITME aro 3 wks	FZ 30-40	SEMI, 1Flat
17A	140	12.80	n-type Si:P	[100]	1"	300	P/E	ITME aro 3 wks	FZ 1-20	SEMI, 1Flat, Soft cst
17H	25	16.00	n-type Si:P	[111] ±0.5°	1"	330	P/E	ITME aro 3 wks	FZ >90	SEMI, NO Flats
AH09	5	48.40	p-type Si:B	[100]	1"	2,000	P/E	aro 5 wks	8-30	SEMI
17G	20	24.40	n-type Si:P	[100]	1"	1,000	P/E	ITME aro 3 wks	30-40	SEMI, 1Flat, hard cst
AE00	15	20.40	n-type Si:As	[100]	1"	300	P/E	aro 5 wks	<1	SEMI
17D	10	40.00	n-type Si:P	[111] ±0.5°	1"	6,000	P/E	ITME aro 3 wks	30-40	SEMI, NO Flats, Individual cst
17B	35	22.40	n-type Si:As	[111] ±0.5°	1"	1,000	P/P	ITME aro 3 wks	0.001-0.005	SEMI, 1Flat, Soft cst
17J	20	19.60	n-type Si:As	[111] ±0.5°	1"	500	P/E	ITME aro 3 wks	0.001-0.005	SEMI, 1Flat, Soft cst
17N	20	19.60	n-type Si:As	[111] ±0.5°	1"	380	P/E	ITME aro 3 wks	0.001-0.007	SEMI, 1Flat, Soft cst

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