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 Material   Type   Dopant   Orientation   Diameter   Thickness   Surface   Resistivity   Nc 
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Updated: Oct 2 2024
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Compound Semiconductors

GaN - Gallium Nitride, GaAs - Gallium Arsenide, GaP - Gallium Phosphide, GaSb - Gallium Antimonide, InAs - Indium Arsenide, InP - Indium Phosphide, InSb - Indium Antimonide
GaN - Gallium Nitride
Note: Surface - P = Polished, E = Etched, C = AsCut, G = Ground, Ox = Oxide (on that surface)
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Stock		 Price
$/wafer		 Material Orient. Diam. Thck
(μm)		 Surf. Source Resistivity
Ωcm		 Nc
a/cm3		 Mobil
cm2/Vs		 EPD
/cm2		 Comment
Q1704 1 $3,500.00 undoped GaN:- [0001] ±1° 4" 480 ±50 P/E NCIT aro 4 wks n-type <0.5     <5E6 Epi Ready

GaAs - Gallium Arsenide
Note: Surface - P = Polished, E = Etched, C = AsCut, G = Ground, Ox = Oxide (on that surface)
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$/wafer		 Material Orient. Diam. Thck
(μm)		 Surf. Source Resistivity
Ωcm		 Nc
a/cm3		 Mobil
cm2/Vs		 EPD
/cm2		 Comment
11654 13 $244.00 undoped SI GaAs:- [100] 6" 625 P/P Reclam n-type       SEMI Notch; Epi Ready
11866 30 $380.00 undoped SI GaAs:- [100] 4" 625 P/E NCIT n-type >1E7     <10,000 2 Flats; Epi Ready
11765 2 $240.00 undoped SI GaAs:- [100] 3" 625 P/P CMK n-type >8.48E8   >2,436 <4.83E4 US Flats; Epi Ready
11734 20 $364.00 undoped SI GaAs:- [100] 3" 550 ±50 P/P NCIT n-type >1E7   >5,000 <10,000 US Flats; Epi Ready
11730 5 $575.20 undoped SI GaAs:- [100] 3" 625 P/P ITME n-type 2.5E7-1.7E8 (7-50)E6 5,000-5,200 <1.5E5 EJ Flats; Epi Ready
A1730 5 $480.00 undoped SI GaAs:- [100] 3" 625 P/P ITME n-type (1.1-0.7)E8 (1.0-1.8)E7 5,300-5,700 <1.5E5 EJ Flats; Epi Ready
12005 3 $170.00 undoped SI GaAs:- [100] 2" 350 P/E CMK n-type 3.45E8-7.01E8   4,151-6,318   1 Flat; Epi Ready
12085 10 $140.00 undoped SI GaAs:- [100-2.5° towards[110]] ±0.5° 2" 500 P/E CMK n-type 2.3E8-4.1E8   1,600-6,500 <8.2E4 US Flats; Epi Ready
6156 1 $195.00 undoped SI GaAs:- [100] 2" 110 ±15 P/P Xiamen n-type >1E7     <3,200 VGF; EJ Flats; Epi Ready
A2005 7 $170.00 undoped SI GaAs:- [100] 2" 350 ±15 P/E CMK n-type 1.5E8-7.15E8   4,310-6,778 <1.3E5 2 Flats; Epi Ready
10161 1 $850.00 undoped SI GaAs:- [100] 2" 6,700 ±50 P/P ITME n-type 1.1E8 1.1E7 5,000 <1E5 NO Flats; Epi Ready
S761 8 $246.00 undoped SI GaAs:- [100] 1" 350 P/P CMK n-type >1E7     <8,000 VGF; NO Flats; Epi Ready
12037 1 $340.00 undoped SI GaAs:- [111A] ±0.25° 2" 450 P/E CMK n-type 1.22E9   2,154 <65,000 2Flats, PF @ <11-2>; SF 45° CCW from PF, Epi Ready; 34 more wafers available
11452 6 $230.00 SI GaAs:Cr [100] 4" 625 P/E CMK 1.58E8-1.93E8   6,081-6,130 <8.04E4 EJ Flats; Epi Ready
11863 15 $320.00 n-type GaAs:Si [100] 4" 625 P/E NCIT <0.005 (1-10)E17 >1,000 <8,000 US Flats; Epi Ready
A0676 2 $165.00 n-type GaAs:Si [100] 3" 370 P/E CMK 0.00152-0.00339 (7.06-23.3)E17 1,760-2,610   US Flats; Epi Ready
10089 38 $78.00 n-type GaAs:Si [100-0.8°] ±0.5° 2" 470 P/E CMK 0.00115-0.00651 (1.45-4.86)E17 >1,000 <8,000 VGF; EJ Flats; Epi Ready, Sealed cassettes of 13 + 25 wafers
A1706 10 $160.00 n-type GaAs:Si [100] 2" 350 P/P CMK 0.00384-0.00500 (4.76-8.24)E17 1,974-2,654 <8,500 VGF; 2 Flats; Epi Ready
12029 9 $180.00 n-type GaAs:Si [100-2° towards[011]] ±0.5° 2" 350 P/E CMK 0.00221-0.00282 (9.1-13.6)E17 2,074-2,438 <2,500 PF @<0-1-1>, SF @ <0-11>; Epi Ready; 19 more wafers available
11706 9 $160.00 n-type GaAs:Si [100] 50±0.3mm 300 P/P CMK   (2.24-6.48)E17   <9,000 VGF; 2 Flats; Epi Ready
8204 1 $141.00 n-type GaAs:Si [111B] 2" 350 P/E CMK   (2.27-2.31)E17     2 Flats; Epi Ready
12162 6 $290.00 p-type GaAs:Zn [100] ±0.25° 4" 500 P/E CMK due 10/17 0.01100-0.00494 (4.54-5.3)E18 90-124 <3,888 VGF; EJ Flats; Epi Ready
A302 38 $109.00 p-type GaAs:Zn [100] ±0.25° 2" 450 ±10 P/E CMK   (8-30)E18   <8,000 VGF; EJ Flats; Epi Ready
B0538 12 $140.00 p-type GaAs:Zn [100] 2" 300 P/E CMK 0.00413-0.01010 (8.48-55.5)E18 37-73 <21,850 1 Flat; Epi Ready
11384 7 $160.00 p-type GaAs:Zn [110] ±0.5° 2" 500 P/E CMK 0.0111-0.0130 (2.97-5.43)E18 103-161 <4.84E4 P Flat @ <011>; S Flat @ <100>, Epi Ready
O1083 5 $138.40 undoped SI GaAs:- [100] 2" 350 P/E CMK aro 2-3 wks n-type 2.19E8   6,375 <84,000 50.8mmØ, EJ Flats; Epi Ready; 13 more wafers available
3F543 1 $195.00 undoped SI GaAs:- [111B] 4" 625 P/E CMK Aro 7-9 wks n-type 3.71E8-5.31E8   5,011-5,416   EJ Flats; Epi Ready; 2 more wafers available
O1375 30 $340.00 undoped SI GaAs:- [111A] 2" 450 P/E CMK Aro 7-9 wks n-type 1.22E9   2,154 <65,000 P Flat @ <11-2>; S Flat 45° CCW from PF, Epi Ready; 34 more wafers available
A819 2 $165.00 n-type GaAs:Si [100] 3" 370 P/E CMK Aro 7-9 wks 0.00406 (3.84-5.1)E17 3,011-3,368 <94,000 EJ Flats; Epi Ready
A819B 1 $166.00 n-type GaAs:Si [100] 3" 400 P/P CMK Aro 7-9 wks 0.00406 (3.84-5.1)E17 3,011-3,368 <94,000 EJ Flats; Epi Ready
HN17 5 $120.00 n-type GaAs:Si [100-0.8° towards[110]] ±0.5° 2" 470 P/E aro 2-3 wks <1 (0.05-1)E18     VGF; EJ Flats; Epi Ready
1F055 16 $138.00 n-type GaAs:Si [100] 2" 620 E/E CMK Aro 7-9 wks 0.00349-0.00851 (2.32-8.18)E17 2,189-3,131 <25,000 US Flats, Can be polished
T3686 6 $194.00 n-type GaAs:Te [100] 4" 750 P/P CMK Aro 7-9 wks 8.09E3 (3.6-18.3)E16 4,218   EJ Flats; Epi Ready; 1 more wafer available

GaP - Gallium Phosphide
Note: Surface - P = Polished, E = Etched, C = AsCut, G = Ground, Ox = Oxide (on that surface)
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Stock		 Price
$/wafer		 Material Orient. Diam. Thck
(μm)		 Surf. Source Resistivity
Ωcm		 Nc
a/cm3		 Mobil
cm2/Vs		 EPD
/cm2		 Comment
11569 2 $580.00 undoped GaP:- [100] 2" 350 P/E ITME n-type >8.2E7 <4.5E18 170 <3E4 2 Flats; Epi Ready, Two US Flats
11764 3 $560.00 undoped GaP:- [100] 2" 360 P/E ITME >28 <1.9E15 115-226 <2E4 US Flats; Epi Ready
11984 5 $750.00 undoped GaP:- [100] 2" 265 ±10 P/P ITME n-type 4.8E3-1.4E5 (3-90)E11 145 <3E4 2 Flats; Epi Ready
12081 3 $1,440.00 undoped GaP:- [110] ±0.5° 2" 450 ±50 P/P ITME due 03/31 n-type >5E8 <8E7 >160 <4E4 US Flats; Epi Ready
10400 1 $680.00 undoped GaP:- [111B] ±0.5° 2" 400 P/E ITME n-type 1.35E13 3.1E3 160 <6E4 EJ Flats; Epi Ready
A0400 1 $680.00 undoped GaP:- [111B] ±0.5° 2" 400 P/P ITME n-type 1.35E13 3.1E3 160 <6E4 EJ Flats; Epi Ready
10778 1 $680.00 undoped GaP:- [111B] ±0.5° 2" 400 P/E ITME n-type 0.09-0.22 (2-4.6)E16 145-155 <8E4 EJ Flats; Epi Ready
10673 3 $700.00 n-type GaP:S [100-10° towards[110]] ±1° 2" 302 P/E ITME 0.11-0.15 (4.75-5.35)E17 105-115 <5E4 EJ Flats; Epi Ready
8152 1 $500.00 n-type GaP:S [100-10° towards[110]] ±1° 2" 302 P/E ITME 0.16 4.79E17 112 <5E4 EJ Flats; Epi Ready
10501 3 $620.00 n-type GaP:S [100] 2" 400 P/E ITME 0.039-0.064 (9-18)E17 88-108 <6E4 EJ Flats; Epi Ready
11961 5 $540.00 n-type GaP:S [100] 2" 500 P/E ITME 0.059 1.1E18 100 <5E4 US Flats; Epi Ready, Note: lamella present (2-9)mm, Individual cst
B0890 1 $440.00 n-type GaP:S [100] 2" 400 P/E ITME 0.039-0.049 (1.3-1.8)E18 88-98 <6E4 US Flats; Epi Ready
A0890 1 $570.00 n-type GaP:S [100] 2" 460 P/E ITME 0.0370 1.9E18 90 <6E4 US Flats; Epi Ready
6940 710 $40.00 n-type GaP:S [100-2.0° towards[101]] ±1.0° 48.25mm 280 ±15 P/E ELMA 0.050-0.125 (4-14)E17 70-130   2 Flats, PF @ <0,1,-1>±1°, SF 135° CW from PF; Sold in sealed cassettes of 25 wafers<
H940 5 $200.00 n-type GaP:S [100-2° towards[110]] ±0.3° 48.25mm 300 ±50 P/E ElmaT 0.050-0.125 (4-14)E17 70-130   2 Flats, PF @ <0,1,-1>±1°, SF 135° CW from PF; Sold in sealed cassettes of 25 wafers
A1786 4 $590.00 n-type GaP:S [111B] ±0.5° 2" 400 P/E ITME 0.075-0.078 (6.6-6.8)E17 122 <5E4 2 Flats SEMI-US; Epi Ready
10543 1 $590.00 n-type GaP:S [111A] ±0.5° 2" 420 P/E ITME 4.7E-2 1.9E18 85 <8E4 1 Flat; Epi Ready
10992 5 $550.00 p-type GaP:Zn [311] ±0.5° 2" 350 P/E ITME 0.85 1.15E18 64 <2.2E4 2 Flats; Epi Ready

GaSb - Gallium Antimonide
Note: Surface - P = Polished, E = Etched, C = AsCut, G = Ground, Ox = Oxide (on that surface)
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$/wafer		 Material Orient. Diam. Thck
(μm)		 Surf. Source Resistivity
Ωcm		 Nc
a/cm3		 Mobil
cm2/Vs		 EPD
/cm2		 Comment
11653 5 $540.00 undoped GaSb:- [100] 2" 450 P/E ITME p-type 0.066-0.070 (1.4-1.5)E17 632-638 <3,000 US Flats; Epi Ready
A1705 5 $520.00 p-type GaSb:Zn [100] 2" 425 P/E ITME 0.0071-0.0077 (2.4-2.8)E18 314-338 <3,000 SEMI-US Flats; Epi Ready
F179 1 $420.00 p-type GaSb:Zn [100] 2" 450 P/E ITME 0.0079 2.6E18 310 <3,000 EJ Flats (66-98)mm; Measured @ 300°K; Epi Ready
G179 1 $420.00 p-type GaSb:Zn [100] 2" 450 P/E ITME 0.0077 2.6E18 310 <3,000 EJ Flats; Epi Ready
A179 1 $420.00 p-type GaSb:Zn [100] 2" 450 P/E ITME 0.0039-0.0040 5.6E18 278 <2,000 US Flats; Measured @ 300°K; Epi Ready

InAs - Indium Arsenide
Note: Surface - P = Polished, E = Etched, C = AsCut, G = Ground, Ox = Oxide (on that surface)
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$/wafer		 Material Orient. Diam. Thck
(μm)		 Surf. Source Resistivity
Ωcm		 Nc
a/cm3		 Mobil
cm2/Vs		 EPD
/cm2		 Comment
10495 9 $350.00 p-type InAs:Zn [100] 2" 500 P/E Xiamen   (1-3)E18 100-130 <10,000 VGF; 2 Flats; Epi Ready

InP - Indium Phosphide
Note: Surface - P = Polished, E = Etched, C = AsCut, G = Ground, Ox = Oxide (on that surface)
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$/wafer		 Material Orient. Diam. Thck
(μm)		 Surf. Source Resistivity
Ωcm		 Nc
a/cm3		 Mobil
cm2/Vs		 EPD
/cm2		 Comment
G950 4 $400.00 SI InP:Fe [100] 6" 680 ±3 P/P Showa 0.9E7-1.6E7   2,800-3,000 <1.8E4 VGF; SEMI Notch; Epi Ready
11595 5 $580.00 SI InP:Fe [100] ±0.2° 3" 625 P/E InPACT >1E7     <3E4 EJ Flats; Epi Ready, TTV<10μm, Warp<15μm, individual cst
11805 5 $380.00 SI InP:Fe [100] 2" 350 P/P InPACT >1E7     <10,000 EJ Flats; Epi Ready
D745 12 $110.00 SI InP:Fe cube [100] 8×4 3,500 P/P Comsec 2.5E7 1.3E8 2,330 6.8E4 All sides polished, 8.0×4.0mm is (001), 4.0×3.5mm is (110), 8.0×3.5mm is (1,-1,0)
F745 3 $300.00 undoped InP:- Seed crystal [100] 16x16 75,000   Comsec n-type       Seed crystal sides are [011] & {01-1]; 92g
G745 7 $140.00 undoped InP:-Seed crystal [100] 8x8 mm 75,000   Comsec n-type       Seed crystal sides are [0,1,1] & [0,1,-1]; 23g
A1651 3 $390.00 n-type InP:S [100] 2" 400 P/E ITME 0.00097-0.00142 (2.8-4.4)E18 1,460-1,570 <2E4 EJ Flats; Epi Ready
B745 7 $280.00 n-type InP:S [100] 2" 2,000 ±50 P/E Comsec 0.0011 3.6E18 1,530 <1.1E4 SEMI Flats; Epi Ready
11651 3 $370.00 n-type InP:S [100] 2" 400 P/E ITME 0.0010-0.0011 (3.8-4.3)E18 1,417-1,490 <2E4 EJ Flats; Edge Chips, Epi Ready, Individual cst
A1777 1 $450.00 p-type InP:Zn [100-2° towards[110]] ±0.1° 50mm 350 P/E InPACT   >1E18   <500 Prime Grade, EJ Flats; Epi Ready
11777 19 $260.00 p-type InP:Zn [100-2° towards[110]] ±0.1° 50.0mm 350 P/E InPACT   >1E18     TEST grade - surface or crystal defects over <5% of wafer area), EJ Flats, Epi Ready, Individual csts
W206 1 $200.00 InP Ingot Poly 2" 15mm   Comsecore         Ingot piece 15mm×16mm×60mm, $200 for whole piece
L206 0.55 $800.00 InP:(S+Zn) Ingot [100] 2"     Comsecore #P_047 ~0.028 ~4.5E18 ~45 0.1E4 Two small Ingot ends
J206 1.35 $1,500.00 n-type InP:S Ingot [100] 2" 133,400   Comsecore #625 (1.3-0.7)E-3 (3.2-7.7)E18 1,500 - 1,200 2.0E4 3 ingots 133.4mm total
2206 1.2 $1,500.00 n-type InP:S Ingot [100] 2" 41, 22, 54   Comsecore #623 (1.40-0.71)E-3 (3.0-7.5)E18 1,460 - 1,190 1.0E4 3 ingots 117mm total
N206 1.41 $1,500.00 n-type InP:S Ingot [100] 2" 114,300   Comsecore #P_93 (1.0-0.9)E-3 (4.3-9.8)E18 1,490 - 1,200 4.0E4 Ingot 114mm long
M206 1.4 $1,500.00 n-type InP:S Ingot [100] 2" 95,000   Comsecore #P_088 (2.70-0.97)E-3 (1.2-4.3)E18 2,130 - 1,500 4.0E4 Ingot 95mm long
R206 3 $800.00 n-type InP:S Ingot [100] 2" 102   Comsecore #P_109 (1.80-0.77)E-3 (2.1-6.3)E18 1,730 - 1,300 4.0E4 Ingot 102mm long
S206 0.45 $800.00 n-type InP:S Ingot Poly 2" 20,000   Comsecore #P_110         Ingot 20mm long
K206 0.66 $1,500.00 n-type InP:S Ingot [100] 2" 63,500   Comsecore #507 (1.3-0.5)E-3 (4.5-16.5)E18 1,230 - 813 1.5E4 Ingot 63.5mm long
Q206 1.48 $1,500.00 n-type InP:S Ingot [100] 2" 158   Comsecore #525 (1.30-0.55)E-3 (3.1-11.0)E18 1,560 - 1,100 1.0E4 Ingot 159mm long

InSb - Indium Antimonide
Note: Surface - P = Polished, E = Etched, C = AsCut, G = Ground, Ox = Oxide (on that surface)
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$/wafer		 Material Orient. Diam. Thck
(μm)		 Surf. Source Resistivity
Ωcm		 Nc
a/cm3		 Mobil
cm2/Vs		 EPD
/cm2		 Comment
A1826 1 $720.00 undoped InSb:- [100] 2" 500 P/E Xiamen n-type 0.00460-0.00475 <2E15 >60,000   Epi Ready
7400 10 $680.00 undoped InSb:- [100] 2" 500 P/E Xiamen n-type 0.0629 <2E14 525,000-5,260,000   EJ Flats; Epi Ready

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