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Updated: Oct 25 2020
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Compound Semiconductors

GaAs - Gallium Arsenide, GaP - Gallium Phosphide, GaSb - Gallium Antimonide, InAs - Indium Arsenide, InP - Indium Phosphide, InSb - Indium Antimonide
GaAs - Gallium Arsenide
Note: Surface - P = Polished, E = Etched, C = AsCut, G = Ground, Ox = Oxide (on that surface)
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Cart		 Item Qty in
Stock		 Price
$/wafer		 Material Orient. Diam. Thck
(μm)		 Surf. Source Resistivity
Ωcm		 Nc
a/cm3		 Mobil
cm2/Vs		 EPD
/cm2		 Comment
J180 5 $50.00 undoped SI GaAs:-   2" 350 P/G AXT n-type       SEMI TEST (shallow pits), NO Flats; Epi Ready, Group of 5 wafers
7426 25 $61.00 undoped SI GaAs:- [100] 6" 525 P/P Reclam n-type       Reclaimed GaAs, Epi Ready
P528 2 $250.00 undoped SI GaAs:- [100] 4" 625 P/E CMK n-type >1E7       EJ Flats; Epi Ready
5538 2 $780.00 undoped SI GaAs:- [100] 4" 2,000 P/P Xiamen n-type >1E7       EJ Flats; Epi Ready
7220 4 $135.00 undoped SI GaAs:- [100] 2" 350 P/E CMK n-type >1E7       EJ Flats; Epi Ready
6156 16 $195.00 undoped SI GaAs:- [100] 2" 110 ±15 P/P Xiamen n-type >1E7     <3,200 VGF; EJ Flats; Epi Ready
6093 1 $190.00 undoped SI GaAs:- [100] 2" 380 P/E ITME n-type 9.67E7 1.15E7 5,590 <7E4 2 Flats; Epi Ready
7187 3 $107.00 undoped SI GaAs:- [100] 1" 350 P/P CMK n-type >1E7       NO Flats; Epi Ready
7259 9 $150.00 undoped SI GaAs:- [110] 2" 350 P/E CMK n-type >1E7   2,865-5,100 <1E5 P Flat @ <011>; S Flat @ <100>, Epi Ready, Lasermark
5628 1 $290.00 undoped SI GaAs:- [310] ±0.5° 2" 400 P/E ITME n-type 5.5E7 1.9E7 5,800 <1,400 SEMI Flats(two); with Minor Scratches
7336 1 $320.00 SI GaAs:Cr [100] 2" 400 P/P ITME 1.05E8-1.15E8 (1.3-1.4)E8 2,246-4,334 <4E4 Cr doped, EJ Flats, Epi Ready
6814 1 $350.00 undoped SI GaAs:- [100] 2" 1,000 P/P ITME n-type 1.18E8 1.45E7 3,656 <4.5E4 EJ Flats; Epi Ready
7256 3 $250.00 n-type GaAs:Si [100] 4" 625 P/E CMK   (3-8)E17   <10,000 VGF; EJ Flats; Epi Ready
E876 1 $290.00 n-type GaAs:Si [100-15° towards[111A]] ±0.5° 4" 350 ±20μm P/E SZ   (0.4-4.0)
E18		 >1,000 <5,000 VGF; EJ Flats; Epi Ready
6418 44 $99.00 n-type GaAs:Si [100-2.0° towards[110]] ±0.5° 4" 350 P/E SZ 0.0012-0.0099 (2-4)E18 1,500-2,500 <3,000 EJ Flats; Epi Ready; TTV<10μm, Bow/Warp<15μm, Sold in groups of 5 wafers
7575 2 $195.00 n-type GaAs:Si [100] 3" 625 P/E CMK 0.121 3E16 >1,690 <1.1E5 EJ Flats; Epi Ready
7175 10 $99.00 n-type GaAs:Si [100] ±0.25° 2" 450 ±10 P/E CMK <0.1 (5-100)E16 >1,000 <8,000 VGF; EJ Flats; Epi Ready
K220 5 $135.00 n-type GaAs:Si [100] 2" 350 P/E CMK   (8.8-10.4)E17     EJ Flats; Epi Ready
6974 1 $250.00 n-type GaAs:Te [111] ±0.5° 1" 500 P/P ITME 0.00245 8.21E17 3,101 <5E4 NO Flats; Epi Ready
7151 1 $270.00 p-type GaAs:Zn [100] ±0.25° 4" 450 P/E CMK <7E-3 (3.1-4.2)E19 >81 <10,000 VGF; EJ Flats; Epi Ready
D175 10 $99.00 p-type GaAs:Zn [100] ±0.25° 2" 450 ±10 P/E CMK   (8-30)E18   <8,000 VGF; EJ Flats; Epi Ready
H180 4 $190.00 p-type GaAs:Zn [100-6° towards[110]] ±0.5° 2" 350 P/E WT 0.0030-0.0065 (1-2.7)E19 75-84 <1,906 VGF; EJ Flats; Epi Ready
6272 1 $190.00 p-type GaAs:Zn [111B] ±0.5° 2" 300 P/E ITME 0.10-0.12 (2.8-3.0)
E17		 193-208 <5.7E4 SEMI Flats; Epi Ready
T3309 5 $188.80 undoped SI GaAs:- [100] 3" 350 P/E CMK aro 2-3 wks n-type >3E7   >7,459   US Flats; Epi Ready
6F2 5 $188.80 undoped SI GaAs:- [100] 3" 625 P/E CMK aro 2-3 wks n-type (2.24-2.64)E8   4,429-5,211 <1.48E4 EJ Flats; Epi Ready
3F512 4 $188.80 undoped SI GaAs:- [100] 3" 500 P/E CMK aro 2-3 wks n-type 1.81E8-2.02E8   4,827-6,029   EJ Flats; Epi Ready
3F512B 6 $188.80 undoped SI GaAs:- [100-4° towards[110]] 3" 625 P/E CMK aro 2-3 wks n-type >1.81E8   >4,827   P Flat @ <0-1-1>; S Flat @ <0-11>; Epi Ready
T2647 3 $188.80 undoped SI GaAs:- [100] 3" 625 P/E CMK aro 2-3 weeks n-type >1.34E8   >6,518 <1.15E5 EJ Flats; Epi Ready
2295A 2 $190.00 undoped SI GaAs:- [100-4° towards[111A]] ±0.5° 51.3mm 380 P/E ITME aro 2 wks n-type 7.4E7 1.7E7 5,000 <8E4 SEMI Flats; Epi Ready
O1416 17 $99.00 undoped SI GaAs:- [100] 2" 350 P/E CMK Aro 2-3 wks n-type >1E7       1 Flat; Epi Ready
3F316 2 $150.00 undoped SI GaAs:- [100-3° towards[01-1]] ±0.5° 2" 350 P/E CMK Aro 2-3 wks n-type >1E7       US Flats; Epi Ready
3F422 4 $150.00 undoped SI GaAs:- [100-2° towards[110]] ±0.5° 2" 400 P/E CMK Aro 2-3 wks n-type >1E7       EJ Flats; Epi Ready
O396 5 $150.00 undoped SI GaAs:- [100-0.8° towards[110]] ±0.2° 2" 482 P/E CMK Aro 2-3 wks n-type >1E7       EJ Flats; Epi Ready
O399 4 $150.00 undoped SI GaAs:- [100-8° towards[110]] ±0.5° 2" 490 P/E CMK Aro 2-3 wks n-type >1E7       EJ Flats; Epi Ready
A1497 14 $150.00 undoped SI GaAs:- [100-2° towards[110]] 2" 500 P/E CMK Aro 2-3 wks n-type >1E7       P Flat @ <0-1-1>; SF @ <0,-11>; Epi Ready
2237 2 $780.00 undoped SI GaAs:- [100] 2" 6,700 P/P ITME aro 2 wks n-type 1.1E8 1.1E7 5,000 <1E5 NO Flats; Epi Ready
2328C 2 $725.00 undoped SI GaAs:- [100] 2" 5,000 P/E ITME aro 2 wks n-type 4E7 2.7E7 5,700 <5.3E4 SEMI Flats; Epi Ready
2313 3 $275.00 undoped SI GaAs:- [110] 2" 500 P/P ITME aro 4-7 wks n-type
(1.9-4.4)E7		 (3.2-11)E7 3,700-4,400 <6,000 Flats PF @ [1,-1,0], SF @ [001]; Epi Ready
2308B 1 $295.00 undoped SI GaAs:- [310] ±0.5° 2" 400 P/E ITME aro 2 wks n-type 5.5E7 1.9E7 5,800 <1,400 EJ Flats; Epi Ready; minor edge chips
3F543 1 $250.00 undoped SI GaAs:- [111B] 4" 625 P/E CMK Aro 2-3 wks n-type >1E7       EJ Flats; Epi Ready
A817 5 $188.80 undoped SI GaAs:- [111A] 3" 630 P/E CMK aro 2-3 wks n-type 1.8E8-6.5E8   4,631-6,643   P Flat @ <11-2>; SF 45° CW from PF; Epi Ready
A817B 5 $188.80 undoped SI GaAs:- [111B] 3" 630 P/E CMK aro 2-3 wks n-type 1.8E8-6.5E8   4,631-6,643   P Flat @ <11-2>; SF 45° CW from PF; Epi Ready
O1706 10 $150.00 undoped SI GaAs:- [111B] 2" 350 P/E CMK Aro 2-3 wks n-type >1E7       P Flat @ <2-11>; SF 45° CW from PF; Epi Ready
O1375 6 $150.00 undoped SI GaAs:- [111A] 2" 450 P/E CMK Aro 2-3 wks n-type >1E7       P Flat @ <11-2>; S Flat 45° CCW from PF, Epi Ready
T3911 3 $290.00 SI GaAs:Cr [100] 4" 625 P/P CMK Aro 2-3 wks >1E7       EJ Flats; Epi Ready
6F19 4 $250.00 n-type GaAs:Si [100] 4" 625 P/E CMK Aro 2-3 wks   (1.6-3.1)
E16		     EJ Flats; Epi Ready
1F1058 3 $250.00 n-type GaAs:Si [100] 4" 625 P/E CMK Aro 2-3 wks   (3-8)E17     EJ Flats; Epi Ready
3F296 2 $195.00 n-type GaAs:Si [100] 3" 650 P/E CMK Aro 2-3 wks   (3.68-8.15)E16     EJ Flats; Epi Ready
A819 4 $195.00 n-type GaAs:Si [100] 3" 400 P/E CMK Aro 2-3 wks   (3.84-5.10)E17     EJ Flats; Epi Ready
1F055 16 $135.00 n-type GaAs:Si [100] 2" 620 P/E CMK Aro 2-3 wks   (2.32-8.18)E17     US Flats; Epi Ready
3F051 3 $135.00 n-type GaAs:Si [100-2° towards[011]] 2" 350 P/E CMK Aro 2-3 wks   (0.91-1.36)E18   <2,500 P Flat @<0-1-1>, SF @ <0-11>; Epi Ready
A825B 12 $135.00 n-type GaAs:Si [111B] 2" 750 P/E CMK Aro 2-3 wks   (3.8-8.7)E16     P Flat @ <11-2>; SF 45° CW from PF; Epi Ready
A825 2 $135.00 n-type GaAs:Si [111A] 2" 750 P/E CMK Aro 2-3 wks   (3.8-8.7)E16     P Flat @ <11-2>; SF 45° CCW from PF; Epi Ready
A1337 5 $135.00 n-type GaAs:Si [111B] 2" 450 P/E CMK Aro 2-3 wks   (2.27-2.81)E17     P Flat @ <11-2>; SF 45° CW from PF; Epi Ready
T3686 3 $290.00 n-type GaAs:Te [100] 4" 750 P/P CMK Aro 2-3 wks   (3.6-17.0)
E16		     EJ Flats; Epi Ready
3F214F 2 $250.00 p-type GaAs:Zn [100] 4" 625 P/E CMK Aro 2-3 wks   (3.1-4.2)
E19		     EJ Flats; Epi Ready
3F214 1 $195.00 p-type GaAs:Zn [100] 3" 625 P/E CMK Aro 2-3 wks   (1.1-4.2)
E19		     EJ Flats; Epi Ready
O908 4 $135.00 p-type GaAs:Zn [100] 2" 350 P/E CMK Aro 2-3 wks   (4.44-14.20)E16     EJ Flats; Epi Ready

GaP - Gallium Phosphide
Note: Surface - P = Polished, E = Etched, C = AsCut, G = Ground, Ox = Oxide (on that surface)
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Cart		 Item Qty in
Stock		 Price
$/wafer		 Material Orient. Diam. Thck
(μm)		 Surf. Source Resistivity
Ωcm		 Nc
a/cm3		 Mobil
cm2/Vs		 EPD
/cm2		 Comment
5529 1 $460.00 SI GaP:Cr [100] 2" 400 P/E ITME 2E10 4.1E6 75 <5E4 US Flats; TEST grade (Black spots on surface)
7506 1 $470.00 undoped GaP:- [100] 2" 400 P/E ITME n-type 0.2E14-3.3E14 (4.00-23.3)E2 142-149 <4E4 2 Flats, TEST grade - 29mm lamelle parallel to SF,, single-wafer cst
7585 1 $580.00 undoped GaP:- [100] 2" 400 P/E ITME n-type 4.1-8.6 (4.6-9.1)E15 156-164 <3E4 US Flats; Epi Ready
G543 1 $300.00 undoped GaP:- [110] ±0.5° 5×6 400 P/P ITME n-type >0.9 <5E16 140 <4.7E4 Ohmic Contacts on the 0.4x6mm edges
7581 1 $200.00 undoped GaP:- [110] ±0.5° 5x5 1,000 ±50 P/P ITME due 10/28 n-type >1.56E13 >1.83E3 >218   Epi Ready
6721 1 $460.00 undoped GaP:- [111B] ±0.5° 2" 400 P/E ITME n-type >240 <1.6E14 150-160 <5E4 EJ Flats; Epi Ready
F721 3 $460.00 undoped GaP:- [111B] ±0.5° 2" 400 P/E ITME n-type <4E14 150-175 <8E4 EJ Flats; Epi Ready
H228 1 $490.00 n-type GaP:S [100] 2" 460 P/E ITME >0.115 (4.8-5.7)E17 >115 <5E4 US Flats; Epi Ready
H506 1 $475.00 n-type GaP:S [100] 2" 450 P/P ITME 0.097-0.011 (4.9-5.7)E17 112-116 <5E4 EJ Flats, P/P
G940 24 $200.00 n-type GaP:S [100-2.0° towards[101]] 48.25mm 280 ±15 P/E ELMA 0.050-0.112 (4.8-16)E17 80-145   2 Flats, PF @ <0,1,-1>±1°, SF 135° CW from PF; Sealed in single wafer cassettes
6940 875 $40.00 n-type GaP:S [100-2.0° towards[101]] 48.25mm 280 ±15 P/E ELMA 0.050-0.112 (4.8-16)E17 80-145   2 Flats, PF @ <0,1,-1>±1°, SF 135° CW from PF; Sold in sealed cassettes of 25 wafers
7536 1 $445.00 n-type GaP:S [111B] ±0.5° 2" 275 P/E ITME 0.136 4.37E17 105 <5E4 NO Flats; Epi Ready
D986 1 $550.00 n-type GaP:S [111B] ±0.5° 2" 400 P/E ITME 0.070-0.090 (5.9-8.7)E17 110-120 <8E4 EJ Flats (PF@[-1,1,0], SF@[1,1,-2]), Epi Ready
H940 5 $200.00 n-type GaP:Si [100-1.8° towards[110]] ±0.3° 48.25mm 300 ±50 P/E Agilen 0.040-0.150 (3.5-18.6)E17 75-120   2 Flats; Sealed in single wafer cassettes
F940 900 $40.00 n-type GaP:Si [100-1.8° towards[110]] ±0.3° 48.25mm 300 ±50 P/E Agilen 0.040-0.150 (3.5-18.6)E17 75-120   2 Flats; Sold in sealed cassettes of 25 wafers
7483 1 $470.00 p-type GaP:Zn [111A] ±0.5° 2" 400 P/P ITME 0.065-0.069 (1.4-1.5)E18 65-66 <5E4 2 Flats; Epi Ready
99B 15 $445.00 p-type GaP:Cd [100] 2" 400 C/C ITME aro 5 wks 2.2 2.5E16 120 <8E4 P/E or P/P, SEMI/EJ Flats, to be polished, MOQ=5 wafers
331 12 $470.00 undoped GaP:- [100] 2" 400 P/E ITME aro 3-6 wks n-type 1E7-1E14 <4E7 >160 <6E4 2 Flats, TEST grade - crystal fault (3-5)mm long, near & parallel to SFlat
358 15 $470.00 undoped GaP:- [100] 2" 400 P/E ITME aro 3-6 wks n-type >1E12 <1E4 <50 <6E4 2 Flats, TEST grade - crystal fault at edge, (15-25)mm, single-wafer cst
373A 18 $470.00 undoped GaP:- [100] 2" 400 P/E ITME aro 3-6 wks n-type 3.3E14-8.4E14 2.33E3 142-146 <6E4 2 Flats, TEST grade - 6mm lamelle parallel to SF,, single-wafer cst
373 13 $470.00 undoped GaP:- [100] 2" 400 P/E ITME aro 3-6 wks n-type 1.8E13 2.33E3 149 <6E4 2 Flats, TEST grade - 29mm lamelle parallel to SF,, single-wafer cst
354 5 $500.00 undoped GaP:- [111B] ±0.5° 2" 400 P/E ITME aro 2 wks n-type 1.35E13 3.1E3 160 <5.9E4 EJ Flats; TEST grade - sub-surface bubbles <20μmØ, single wafer cst
349 7 $1375.00 undoped GaP:- [111B] ±0.5° 2" 3,425 C/C ITME aro 2 wks n-type 3.2E3-1.2E8 (3.5-120000)E8 150-156 <5E4 2 Flats; can be supplied polished aro (3-6) weeks
296C 3 $465.00 n-type GaP:S [100-10° towards[110]] ±1° 2" 300 P/E ITME aro 2 wks 0.115 4.75E17 115 <5E4 EJ Flats; Epi Ready
280 2 $445.00 n-type GaP:S [100-10° towards[110]] ±1° 2" 302 P/E ITME aro 2 wks 0.11 4.79E17 112 <5.5E4 EJ Flats; Epi Ready
296D 1 $475.00 n-type GaP:S [100] 2" 450 P/P ITME Aro 1-2 wks 0.115 (4.8-5.7)E17 115 <5E4 EJ Flats, P/P
268 2 $445.00 n-type GaP:S [100-10° towards[110]] ±1° 2" 302 P/E ITME aro 2 wks 0.11 5.3E17 105 <8.9E4 EJ Flats; Epi Ready
78B 1 $440.00 n-type GaP:S [100-6° towards[111]] ±1° 2" 400 P/E ITME aro 2 wks 0.058 9.9E17 107 <5.3E4 SEMI Flats; Epi Ready
244 3 $445.00 n-type GaP:S [100-10° towards[011]] ±1° 2" 350 ±10 P/E ITME aro 2 wks 0.051 1.4E18 88 <6.6E4 SEMI Flats; Epi Ready
129B 17 $570.00 n-type GaP:S [100] 2" 350 P/P ITME aro 4-6 wks 0.064 (1.7-1.9)E18 87-90 <6E4 SEMI/EJ Flats, P/E or P/P, to be polished, MOQ=5 wafers
009 1 $445.00 n-type GaP:S [111B] ±0.5° 2" 275 P/E ITME aro 2 wks 0.136 4.37E17 105 <5E4 NO Flats; Epi Ready
012B 1 $550.00 n-type GaP:S [111B] ±0.5° 2" 400 P/E ITME aro 2 wks 0.075 8.6E17 96 <7.8E4 EJ Flats (PF@[-1,1,0], SF@[1,1,-2]); Epi Ready
148A 1 $445.00 n-type GaP:S [111A] ±0.5° 2" 350 P/E ITME aro 2 wks 0.042 2E18 76 <2E5 SEMI Flats; TEST grade, not fully polished
148B 1 $445.00 n-type GaP:S [111B] 2" 400 P/P ITME aro 2 wks 0.041 2E18 72 <2E5 EJ Flats; TEST grade - Small scratch
285C 1 $485.00 p-type GaP:Zn [100] 2" 1,000 P/E ITME aro 2 wks 0.088 1.3E18 56 <4E4 SEMI Flats; Epi Ready
319 2 $500.00 p-type GaP:Zn [111B] ±0.5° 2" 450 P/E ITME aro 2 wks 0.069-0.074 (1.3-1.4)E18 65-66 <5E4 SEMI Flats; Epi Ready
243A 10 $455.00 p-type GaP:Zn [311] ±0.5° 2" 350 P/E ITME aro 2 wks 0.085 1.15E18 64 <2.2E4 SEMI Flats; Epi Ready

GaSb - Gallium Antimonide
Note: Surface - P = Polished, E = Etched, C = AsCut, G = Ground, Ox = Oxide (on that surface)
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Cart		 Item Qty in
Stock		 Price
$/wafer		 Material Orient. Diam. Thck
(μm)		 Surf. Source Resistivity
Ωcm		 Nc
a/cm3		 Mobil
cm2/Vs		 EPD
/cm2		 Comment
7169 8 $370.00 n-type GaSb:Te [100] 2" 500 P/E Xiamen 0.0009-0.0034 (2-15)E17 2,500-3,500 <10,000 US Flats; Epi Ready
G437 1 $490.00 undoped GaSb:- [100] 2" 400 P/E ITME p-type 0.072 1.23E17 695 <3,000 US Flats; Measured @ 300°K; Epi Ready
7241 1 $500.00 p-type GaSb:Zn [100] 3" 600 P/P Xiamen   (1-5)E18 300-500 <1,000 SEMI TEST (some scratches), 2 Flats - PF@(0,-1,-1), SF@(0,-1,+1); Epi Ready clean
D448 2 $425.00 p-type GaSb:Zn [111B] ±0.5° 2" 450 P/E ITME 0.0029 7E18 300 <1,700 US Flats; Measured @ 300°K; Epi Ready
GaSb28 23 $430.00 undoped GaSb:- [100] 2" 450 C/C ITME Aro 1-2 wks p-type 0.073 1.2E17 694 <3,000 US Flats(two); Measured at 300°K; Price for polished wafers
GaSb24B 2 $430.00 p-type GaSb:Zn [100] 2" 450 P/E ITME aro 4 wks 0.00790 2.6E18 310 <3,000 EJ Flats; Epi Ready
GaSb24D 4 $430.00 p-type GaSb:Zn [100] 2" 610 C/C ITME aro 1-2 wks 0.0079 2.6E18 310 <3,000 EJ Flats (66-98)mm; Price for Polished wafers
GaSb24C 10 $475.00 p-type GaSb:Zn [100-6.0° towards[111]] ±0.5° 2" 550 C/C ITME aro 1-2 wks 0.0074 2.6E18 320 <3,000 EJ Flats (42-52)mm; Price for Polished wafers
GaSb23C 8 $475.00 p-type GaSb:Zn [100-6° towards[111]] ±0.5° 2" 380 P/E ITME aro 3 weeks 0.00415 5.43E18 275 <3,000 US Flats; Measured @ 300°K; Epi Ready
GaSb23 4 $430.00 p-type GaSb:Zn [100] 2" 450 C/C ITME aro 1-2 wks 0.0043 5.5E18 265 <2,000 US Flats; Price for polished wafers
GaSb23B 2 $430.00 p-type GaSb:Zn [100] 2" 450 P/E ITME aro 3 weeks 0.0039-0.0040 5.6E18 278 <2,000 US Flats; Measured @ 300°K; Epi Ready
GaSb26 1 $430.00 p-type GaSb:Zn [111B] ±0.5° 2" 450 P/E ITME aro 3 wks 0.0029 7E18 300 <1,700 US Flats; Measured @ 300°K; Epi Ready

InAs - Indium Arsenide
Note: Surface - P = Polished, E = Etched, C = AsCut, G = Ground, Ox = Oxide (on that surface)
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Cart		 Item Qty in
Stock		 Price
$/wafer		 Material Orient. Diam. Thck
(μm)		 Surf. Source Resistivity
Ωcm		 Nc
a/cm3		 Mobil
cm2/Vs		 EPD
/cm2		 Comment
L401 1 $100.00 undoped InAs:- [100] 2" 400 BROKEN ITME n-type 0.0110-0.0125 (2-2.5)E16 >20,000   EJ Flats, Browken into one large piece (~80% and many small pieces)
7545 10 $350.00 p-type InAs:Zn [100] 2" 500 P/E Xiamen   (1-3)E18 100-130 <10,000 US Flats; Epi Ready
130 2 $720.00 undoped InAs:- [100] 3" 500 P/E ITME aro 5-8 wks n-type 0.0096-0.0130 (2.1-3)E16 21,540-23,200 <3,500 EJ Flats; Epi Ready
161 9 $500.00 undoped InAs:- [100] 2" 400 P/E ITME aro 3-5 wks n-type 0.010-0.015 (2.6-3.9)E16 19,000-21,000 <2,000 SEMI TEST; Epi Ready; Note Wafers have a crystal fault at wafer edge, in single wafer cst
87A 3 $450.00 p-type InAs:Zn [100] 2" 450 P/E ITME aro 3 wks 0.0048-0.0113 (1.1-3.6)E19 116-152 <1,000 Epi Ready, Low EPD, small Flat 180° from PF

InP - Indium Phosphide
Note: Surface - P = Polished, E = Etched, C = AsCut, G = Ground, Ox = Oxide (on that surface)
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Cart		 Item Qty in
Stock		 Price
$/wafer		 Material Orient. Diam. Thck
(μm)		 Surf. Source Resistivity
Ωcm		 Nc
a/cm3		 Mobil
cm2/Vs		 EPD
/cm2		 Comment
D608 2 $150.00 InP:S+Zn [100] 2" 400 BROKEN ITME 0.0203 3.8E17 810 <4.2E4 SEMI Flats; Epi Ready
Q948 2 $600.00 SI InP:Fe [100] 6" 657 ±3 P/P Showa 6.9E7-8.5E7   3,300 <10,000 2 Flats; Epi Ready
E950 3 $600.00 SI InP:Fe [100] 6" 677 ±4 P/P Showa 1.3E7-1.7E7   2,700-3,200 <2.2E4 VGF; SEMI Flats; Epi Ready
G950 11 $490.00 SI InP:Fe [100] 6" 680 ±3 P/P Showa (0.9-1.6)E7   2,800-3,000 <1.8E4 VGF; SEMI Flats; Epi Ready
J948 1 $600.00 SI InP:Fe [100] 6" 676 ±7 P/P Synerg (1.5-2.5)E7 (1.0-1.3)E8 2,400-3,100 <9,000 SEMI Flats; Epi Ready
H949 2 $400.00 SI InP:Fe [100] 4" 625 P/P AXT 6E7-7.5E7   2,000-2,200 <5,000 US Flats; Epi Ready
K948 1 $400.00 SI InP:Fe [100] 4" 650 ±10 P/P Nikko (5.8-6.0)E7   3,400 <10,000 2 Flats; Epi Ready
O948 6 $400.00 SI InP:Fe [100] 4" 641 ±1 P/P Nikko (4.2-5.3)E7   3,200-3,300 <10,000 2 Flats; Epi Ready
I948 2 $400.00 SI InP:Fe [100] 4" 600 P/P AXT >1E7   >2,000 <5E4 2 Flats; Epi Ready
M949 1 $390.00 SI InP:Fe [100] 4" 630 ±3 P/P Showa (1.6-3.7)E7   2,800-3,200 <4,000 2 Flats; Epi Ready
O949 2 $290.00 SI InP:Fe [100] ±0.3° 3" 608 ±8 P/P Sumito 6.5E7-1.3E8   2,900-3,100   VGF; EJ Flats; Epi Ready
Q949 5 $290.00 SI InP:Fe [100] ±0.1° 3" 617 ±9 P/P Nikko (5.0-8.2)E7   3,000 <4E4 EJ Flats; Epi Ready
F950 7 $290.00 SI InP:Fe [100] ±0.3° 3" 585 P/P Sumito 3E7-8E7   3,000   EJ Flats; Epi Ready, Groups of 7 wafers
L948 6 $149.00 SI InP:Fe [100] ±0.3° 3" 625 P/P Nikko >1E7   >2,000 <5E4 EJ Flats; Mechanical grade
J949 1 $190.00 SI InP:Fe [100] ±0.2° 3" 621 ±6   Showa 4.4E7-8E7 (2.9-4.8)E7 2,800-3,100 <1.4E4 VGF
L949 3 $290.00 SI InP:Fe [100-2.0° towards[110]] ±0.5° 3" 638 ±3 P/P Showa (2.1-2.5)E7 (9-11)E7 2,600-2,800 <2.3E4 EJ Flats; Epi Ready
M948 1 $290.00 SI InP:Fe [100-0.20°] ±0.01° 3" 595 ±10 P/E Showa 1.6E7-2.9E7 (9-17)E7 2,600-2,800 <1.7E4 EJ Flats; Epi Ready
K180 4 $99.00 SI InP:Fe [100-0.2° towards[110]] ±0.1° 2" 350 P/E InPACT 5.2E7       SEMI-TEST (scratches), EJ Flats, Epi-Ready
D745 17 $290.00 SI InP:Fe cube [100] 8×4 3,500 P/P Comsec 2.5E7 1.3E8 2,330 6.8E4 All sides polished, 8.0×4.0mm is (001), 4.0×3.5mm is (110), 8.0×3.5mm is (1,-1,0)
G948 1 $600.00 undoped InP:- [100-0.21°] ±0.5° 6" 679 ±6 P/P Synerg n-type 0.53-4.65 (5-28)E14 2,850-4,500 <1.15E5 SEMI Flats; Epi Ready
7399 5 $380.00 undoped InP:- [100] 2" 350 P/E InPACT n-type <1E16 >4,200 <5,000 EJ Flats; Epi Ready
F745 3 $996.00 undoped InP:- Seed crystal [100] 16x16 75,000   Comsec n-type       Seed crystal sides are [011] & {01-1]; 92g
G745 9 $296.00 undoped InP:-Seed crystal [100] 8x8 mm 75,000   Comsec n-type       Seed crystal sides are [0,1,1] & [0,1,-1]; 23g
K661 1 $280.00 undoped InP:- [111A] ±0.5° 2" 350 P/E Xiamen n-type 0.046-0.612 (6-30)E15 >1,700 <5E4 EJ Flats; Epi Ready
6699 2 $298.00 n-type InP:S [100] 2" 350 P/E InPACT   (3-8)E18 >1,200 <500 VGF; EJ Flats; Epi Ready
B745 7 $390.00 n-type InP:S [100] 2" 2,000 P/E Comsec 0.0011 3.6E18 1,530 <1.1E4 SEMI Flats; Epi Ready
N374 7 $49.60 n-type InP:S [100] 2" 400 C/C CSW 0.5E-3-0.8E-3 (5.5-8.8)E18 1,100-1,300 <2E4 2 Flats, Group of 7 wafers
M374 19 $49.60 n-type InP:S [100] 2" 400 C/C CSW 0.5E-3-0.8E-3 (5.5-8.8)E18 1,100-1,300 <2E4 2 Flats, Group of 19 wafers
7346 2 $320.00 n-type InP:S [100] 2" 400 P/E ITME 8.08E-4 9.18E18 1,110 <5E4 2 Flats; Epi Ready
6882 3 $298.00 p-type InP:Zn [100] 2" 350 P/E InPACT   (4-5)E18   <500 EJ Flats; Epi Ready
L180 4 $290.00 p-type InP:Zn [100-2° towards[111]] ±0.1° 2" 350 P/E InPACT p-type 4.1E18   <500 EJ Flats; Epi Ready
L206 0.55 $800.00 InP:(S+Zn) Ingot [100] 2"     Comsecore #P_047 ~0.028 ~4.5E18 ~45 0.1E4 Two small Ingot ends
J206 1.35 $1500.00 n-type InP:S Ingot [100] 2" 133,400   Comsecore #625 (1.3-0.7)E-3 (3.2-7.7)E18 1,500 - 1,200 2.0E4 3 ingots 133.4mm total
2206 1.2 $1500.00 n-type InP:S Ingot [100] 2" 117,490   Comsecore #623 (1.40-0.71)E-3 (3.0-7.5)E18 1,460 - 1,190 1.0E4 3 ingots 117mm total
N206 1.41 $1500.00 n-type InP:S Ingot [100] 2" 114,300   Comsecore #P_93 (1.0-0.9)E-3 (4.3-9.8)E18 1,490 - 1,200 4.0E4 Ingot 114mm long
M206 1.4 $1500.00 n-type InP:S Ingot [100] 2" 95,000   Comsecore #P_088 (2.70-0.97)E-3 (1.2-4.3)E18 2,130 - 1,500 4.0E4 Ingot 95mm long
R206 3 $800.00 n-type InP:S Ingot [100] 2" 101,600   Comsecore #P_109 (1.80-0.77)E-3 (2.1-6.3)E18 1,730 - 1,300 4.0E4 Ingot 102mm long
S206 0.45 $800.00 n-type InP:S Ingot Poly 2" 20,000   Comsecore #P_110         Ingot 20mm long
K206 0.66 $1500.00 n-type InP:S Ingot [100] 2" 63,500   Comsecore #507 (1.3-0.5)E-3 (4.5-16.5)E18 1,230 - 813 1.5E4 Ingot 63.5mm long
P040 1 $325.00 n-type InP:S [100] 2" 350 P/E ITME aro 12 wks 8.89E-4 4.96E18 1,418 <2.9E4 EJ Flats; Epi Ready
P029 4 $305.00 n-type InP:S [100] 2" 400 P/E ITME aro 12 wks 5.7E-4 8.24E18 1,330 <10,000 US Flats; Epi Ready
474 4 $300.00 n-type InP:S [100] 2" 400 P/E ITME aro 12 wks 7.08E-4 9.3E18 950 <1,000 EJ Flats; Epi Ready
636 4 $335.00 n-type InP:S [115] 2" 400 P/E ITME aro 12 wks 1.08E-3 4.07E18 1,416 <3.7E4 NO Flats, Epi Ready

InSb - Indium Antimonide
Note: Surface - P = Polished, E = Etched, C = AsCut, G = Ground, Ox = Oxide (on that surface)
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Cart		 Item Qty in
Stock		 Price
$/wafer		 Material Orient. Diam. Thck
(μm)		 Surf. Source Resistivity
Ωcm		 Nc
a/cm3		 Mobil
cm2/Vs		 EPD
/cm2		 Comment
7400 10 $500.00 undoped InSb:- [100] 2" 500 P/E Xiamen due 12/30 n-type <2E14     US Flats; Epi Ready
G138 1 $150.00 n-type InSb:Te [111A] ±0.5° 2" 525 BROKEN Xiamen 0.0230-0.0313 (3-8)E14 400,000-450,000 <50 One Flat; Epi Ready; Nc & u @ 77°K
5138 4 $350.00 n-type InSb:Te [111A] ±0.5° 2" 525 P/P Xiamen 0.0230-0.0313 (3-8)E14 400,000-450,000 <50 One Flat; Epi Ready; Nc & u @ 77°K
6707 3 $680.00 n-type InSb:Te [111B] ±0.5° 2" 500 P/E Xiamen   2E15 >400,000 <500 SEMI Prime, P Flat @ <-110>, SF @ <1-10>; Epi Ready
6506 2 $540.00 p-type InSb:Ge [100] 2" 470 P/E Xiamen   (5-500)E15 4,000-8,000 <500 US Flats, P Flat @ <011>, SF @ <01-1>; Epi Ready

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