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Updated: May 22 2024
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SiC Wafers

SiC Wafers
Note: Surface - P = Polished, E = Etched, C = AsCut, G = Ground, Ox = Oxide (on that surface)
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11757 3 $1,000.00 SiC (4H) <0001>±0.5° 2" 250±10 P/P NCI >100,000 Semi Insulating, Front-"Si"-side epi-grade-polished, Front side roughness =5Å, Microscratches =5/wafer, Individual csts

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