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III-V Materials Germanium Sapphire Quartz Solar Materials Misc. Materials Order Form
                   
 Material   Type   Dopant   Orientation   Diameter   Thickness   Surface   Resistivity   TTV 
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Updated: Dec 6 2024
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Germanium

4" Wafers, 3" Wafers, 2" Wafers, 1" Wafers
4" Wafers
Note: Surface - P = Polished, E = Etched, C = AsCut, G = Ground
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$/wafer
Material Orient. Diam. Thck
(μm)
Surf. Source Resistivity
Ohmcm
Comment
S5703b 1 $150.00 Ge   4" 200 G/G Gener   SEMI, 1Flat, Unsealed
S5703 9 $150.00 Ge   4" 200 G/G Umicor   Ground Wafers, not polished, SEMI, 1Flat, Individual cst, in pack of 9 wafers
DT1459 1 $1,300.00 Ge:- [100] 4" 525 P/E WW aro 2 wks >30 SEMI Prime, Epi-Ready, single wafer cst
DT2291 1 $1,780.00 Ge:- [100] 4" 475 P/P WW aro 2 wks >30 SEMI Prime, Epi-Ready, single wafer cst
DT2148 1 $700.00 n-type Ge:Sb [100-9°] 4" 175 P/E WW aro 2 wks <0.4 SEMI TEST, single wafer cst
DT1453 1 $1,300.00 n-type Ge:Sb [100] 4" 525 P/E WW aro 2 wks 0.005-0.020 SEMI Prime, Epi-Ready, single wafer cst
DT2296 1 $1,780.00 n-type Ge:Sb [100] 4" 475 P/P WW aro 2 wks 0.005-0.020 SEMI Prime, Epi-Ready, single wafer cst
DT1456 1 $1,300.00 p-type Ge:Ga [100] 4" 525 P/E WW aro 2 wks 0.01-0.04 SEMI Prime, Epi-Ready, single wafer cst
DT2301 1 $1,780.00 p-type Ge:Ga [100] 4" 475 P/P WW aro 2 wks 0.01-0.04 SEMI Prime, Epi-Ready, single wafer cst

3" Wafers
Note: Surface - P = Polished, E = Etched, C = AsCut, G = Ground
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Material Orient. Diam. Thck
(μm)
Surf. Source Resistivity
Ohmcm
Comment
10544 3 $700.00 Ge:- [111] ±0.5° 3" 500 P/E Xiamen >30 Prime, 1Flat, TTV<5μm, Individual cst
DT2304 1 $1,060.00 Ge:- [100] 3" 375 P/E WW aro 2 wks >30 SEMI Prime, Epi-Ready, single wafer cst
DT2321 1 $1,420.00 Ge:- [100] 3" 325 P/P WW aro 2 wks >30 SEMI Prime, Epi-Ready, single wafer cst
DT1532 1 $820.00 n-type Ge:Sb [100-6°] 3" 150 ±50 P/E WW aro 2 wks 0.01-0.04 TEST grade, 60x70mm rectangles
DT2326 1 $1,420.00 n-type Ge:Sb [100] 3" 325 P/P WW aro 2 wks 0.005-0.020 SEMI Prime, Epi-Ready, single wafer cst
DT2151 1 $1,060.00 n-type Ge:Sb [100] 3" 375 P/E WW aro 2 wks 0.005-0.020 SEMI Prime, Epi-Ready, single wafer cst
DT2299 1 $1,060.00 p-type Ge:Ga [100] 3" 375 P/E WW aro 2 wks 0.01-0.04 SEMI Prime, Epi-Ready, single wafer cst
DT2331 1 $1,420.00 p-type Ge:Ga [100] 3" 325 P/P WW aro 2 wks 0.01-0.04 SEMI Prime, Epi-Ready, single wafer cst

2" Wafers
Note: Surface - P = Polished, E = Etched, C = AsCut, G = Ground
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$/wafer
Material Orient. Diam. Thck
(μm)
Surf. Source Resistivity
Ohmcm
Comment
7112 10 $200.00 Ge - 50mm x 10mm 3,000 Poly Antek n-type Prime, Group of 10 rectangles
I180 33 $180.00 Ge:- [100-6°] 2" 350 P/E EP   Prime polish, NO Flats, single wafer cst
10602 1 $600.00 Ge:- [111] ±0.5° 2" 100 ±15 P/P Xiamen   Ultra-thin Germanium, in single wafer cst
e04 10 $100.00 n-type Ge:- [111] 2" 559 C/C Girmet 18-22 Sealed in coin-roll
11457 5 $500.00 n-type Ge:- [100] 2" 500 P/P NCIT >40 SEMI Prime, 1Flat, Individual cst
M180 30 $400.00 n-type Ge:As [100-6° towards[011]] 2" 375 P/E AXT   SEMI Prime, 1Flat, single wafer cst
S1459 0.6 $1,360.00 n-type Ge:Sb [111] 2" 55 Ground Umicor 0.18-0.22 NO Flats
S5705 1.52 $2,000.00 n-type Ge:Sb [111] 2" 134   Umicor 0.0057-0.0071 1Flat
S1402 1.15 $1,360.00 p-type Ge:Ga [111] 2" 76, 23   Umicor 0.014-0.020 1st piece 0.86Kg and 76mm, 2nd piece 0.30Kg and 23mm
S5867 6 $80.00 p-type Ge:Ga [111-4°] ±1° 2" 317 BROKEN Umicor 0.009-0.020 wafers broken in lapping, single wafer cst in group 6 wafers
S5704 1 $80.00 p-type Ge:Ga [111-4°] ±1° 2" 317 BROKEN Umicor 0.02-0.04 SEMI TEST (Broken wafer), 1Flat, in single wafer cst
N180 4 $180.00 p-type Ge:Ga [100-5.9° towards[111]] ±1° 2" 250 P/E AXT   TEST grade, 2Flats, single wafer cst
S5868 1 $99.00 p-type Ge:Ga [111-4°] ±1° 2" 317 P/E Umicor 0.02-0.04 SEMI TEST - Defects, 1Flat, single wafer cst
S5758 12 $200.00 p-type Ge:Ga [111-4°] ±1° 2" 317 P/E Umicor 0.03-0.04 SEMI TEST - Defects 1Flat, single wafer cst, Groups of 7 & 5 wafers
S5765 13 $400.00 p-type Ge:Ga [111-4°] ±1° 2" 317 P/E Umicor 0.02-0.04 SEMI Prime, 1Flat, Group of 13 wafers
1533 2 $140.00 p-type Ge:Ga [100] 2" 375 ±50 P/E MTI 1-10 SEMI TEST {haze and oxide near edges}, 1Flat, single wafer cst
11485 2 $450.00 p-type Ge:Ga [100] 2" 350 P/E NCIT 1-10 SEMI Prime, 1Flat, Individual cst
DT2150 1 $820.00 Ge:- [100] 2" 375 P/E WW aro 2 wks >30 SEMI Prime, 1Flat, Epi-Ready, single wafer cst
DT2306 1 $1,060.00 Ge:- [100] 2" 325 P/P WW aro 2 wks >30 SEMI Prime, 1Flat, Epi-Ready, single wafer cst
DT2311 1 $1,060.00 n-type Ge:Sb [100] 2" 325 P/P WW aro 2 wks 0.005-0.020 SEMI Prime, Epi-Ready, single wafer cst
DT1332 1 $820.00 n-type Ge:Sb [100] 2" 375 P/E WW aro 2 wks 0.005-0.020 SEMI Prime, Epi-Ready, single wafer cst
DT2316 1 $1,060.00 p-type Ge:Ga [100] 2" 325 P/P WW aro 2 wks 0.01-0.04 SEMI Prime, Epi-Ready, single wafer cst
DT2149 1 $820.00 p-type Ge:Ga [100] 2" 375 P/E WW aro 2 wks 0.01-0.04 SEMI Prime, Epi-Ready, single wafer cst

1" Wafers
Note: Surface - P = Polished, E = Etched, C = AsCut, G = Ground
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Material Orient. Diam. Thck
(μm)
Surf. Source Resistivity
Ohmcm
Comment
6867 5 $280.00 n-type Ge:Sb [100] 1" 250 P/E WW 5-40 Prime, NO Flats, Individual cst, Group of 5 wafers
DT2162 25 $364.00 n-type Ge:Sb [100] 1" 250 P/E WW aro 2 wks 5-40 MINIMUM 25 WAFERS; SEMI Prime, NO Flats, in hard cst

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